• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• 전기학회논문지
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• 제65권8호
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• 한국재료학회지
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• 제2권5호
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• pp.337-342
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• 1992

대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% $O_2$+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.223-224
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• 2009

본 연구에서는 $Cl_2$/Ar 기반의 플라즈마 식각에 $N_2$가스를 첨가하여 ZnO 박막을 식각 하였을 때 관찰된 ZnO 박막의 식각 특성에 관하여 연구 하였다. ZnO 박막 식각 실험은 RF 800 W, bias power 400 W, 공정 압력 15 mTorr를 기준으로 하였으며 가스 혼합 비율로는 최적의 식각률을 보여주는 $Cl_2$/Ar=8:2 비율에서 실행하였다. 연구의 목적인 첨가 가스 $N_2$를 $Cl_2$ (80%)/Ar (20)%에 5 sccm 씩 첨가하여 20 sccm 까지 증가 시켜 실험 하였다. $N_2$ 가스가 15 sccm 첨가되었을 때 식각률 95.9 nm/min로 기존 $Cl_2$/Ar 기반의 플라즈마 식각보다 높은 식각률을 보여 주었으며 $N_2$ 가스 흐름 조절 외에도 공정 압력, RF power, bias power를 변경하며 실험하였다. 식각된 ZnO 박막의 표면은 최대 식각률을 보이는 공정 조건을 찾기 위해 surface profiler ($\alpha$-step)을 이용하여 식각률을 측정하였으며 ZnO 박막 표면의 화학적인 변화를 조사하기 위해 x-ray photoelectron spectroscopy (XPS)를 사용하였다. XPS 분석 결과 Zn $2p_{3/2}$ peak 가낮은 binding energy 쪽으로 이동한 것을 관찰 할 수 있었다. 또한 O 1s 의 스펙트럼을 분석한 결과 N-O bond와 O-H bond가 존재함이 밝혀졌다.

• 한국표면공학회지
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• 제42권6호
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

• 한국진공학회지
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• 제15권1호
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• pp.73-80
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• 2006

Si(100)에 주입된 불활성 기체 이온들의 열적 방출 특성을 열탈착(temperature-programmed desorption; TPD) 질량분석법으로 고찰하였다. 약 400K의 표면 온도 조건에서 1keV 비온빔에 시료를 노출시켜 주었을 때, He은 $500\~1100 K$의 넓은 온도 범위에서 Si(100)결정 밖으로 분출되어 나온 반면, Ne, Ar, 및 Kr은 각각 810, 860, 875 K 근처에서 매우 좁은 온도 범위에서 TPD 피크를 나타내며 급격하게 방출되었다. He+ 이온으로 처리된 Si(100)은 표면 원자 구조의 손상이 상대적으로 최소한으로 일어났지만, $Ne^+,\;Ar^+,\;Kr^+$ 등의 이온들로 처리된 경우는 질량이 클수록 표면이 원자 스케일로 더 심하게 손상되었음이 수소 흡탈착 분석 결과로 밝혀졌다. 이온빔에 의한 결정 내부의 결함 생성과 관련하여 이러한 실험적 결과가 시사하는 점들을 논의하였다

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 학술대회 논문집
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• pp.9-12
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• 2004

Recently, the environmental problem has received considerable attention. so, many lamps have been developing for environmental requirement and energy efficiency. also, at glow discharge lamp researchers try to reduce energy spending that is power saving lamp. this kind requirement agree with strong points of electrodeless fluorescent lamp has received to now lighting sauce. At low pressure as mTorr I.C.P make high density plasma easily, is good to maintain discharge, has high ionization and does not have failing lighting and losing ability of electron radiation by oxidation and volatilization of electrodes, because this tape does not have electrodes This point of I.C.P can use at electrodeless fluorescent lamp in this study ICP display elements and Ar, Ne, Kr are researched for optical characteristic. each gas is looked into optical characteristic, also mixed gases is experiment for optical characteristic.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.25.1-28
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• 2000

In this study, $Y_2O_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$were investigated by varying $Cl_2$/($Cl_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2O_3$ , and the selectivity of $Y_2O_3$ to YMnO$_3$ were 302/min, and 2.4 at $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2 repetitively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2O_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCl, and $YC_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively.