• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Journal of the Korean Chemical Society
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• v.34 no.4
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• pp.352-359
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• 1990

An effecient gas chromatographic method is described to be used routinely for the rapid profiling and identification of biochemically important organic acids. It involves the solid-phase extraction of organic acids from aqueous samples using Chromosorb P as the solid sorbent and diethyl ether as the eluting solvent, with subsequent triethylamine treatment. The resulting triethylammonium salts of acids were directly converted to volatile tert-butyldimethylsiyl derivatives, which were simultaneously analyzed by two capillary columns of different polarity, DB-5 and DB-1701, under the identical temperature programming condition. The retention index (RI) and area ratio (AR) values of each peak measured on DB-5 and DB-1701 enabled rapid identification of acids by computer RI library search and AR comparison. The application of the present method to the organic acid profiling of various complex samples is demonstrated.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Nuclear Engineering and Technology
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• v.46 no.6
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• pp.857-862
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• 2014

Mechanical alloying under various gas atmospheres such as Ar, an Ar-$H_2$ mixture, and He gases were carried out, and its effects on the powder properties, microstructure and mechanical properties of ODS ferritic steels were investigated. Hot isostatic pressing and hot rolling processes were employed to consolidate the ODS steel plates. While the mechanical alloyed powder in He had a high oxygen concentration, a milling in Ar showed fine particle diameters with comparably low oxygen concentration. The microstructural observation revealed that low oxygen concentration contributed to the formation of fine grains and homogeneous oxide particle distribution by the Y-Ti-O complex oxides. A milling in Ar was sufficient to lower the oxygen concentration, and this led a high tensile strength and fracture elongation at a high temperature. It is concluded that the mechanical alloying atmosphere affects oxygen concentration as well as powder particle properties. This leads to a homogeneous grain and oxide particle distribution with excellent creep strength at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.836-840
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• 2013

In this study, the surface modification of copper foil using an inductively coupled $O_2$ / Ar plasma as $O_2$ gas fraction (0~100%) was investigated in order to improve the surface characteristics. After plasma treatment, the measurement of the surface roughness, surface contact angle and surface energy were performed for the surface analysis of copper foil. As a result, the surface roughness and the surface energy were increased. And plasma diagnostics was performed by a double Langmuir probe (DLP) and optical emission spectroscopy (OES). Using these results, the plasma surface modification mechanism was investigated.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.40-40
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• 1999

가속기나 토카막과 같은 거대한 진공 장치의 용기 내벽을 청정화 하기 위해서는 용기 전체의 열처리(굽기, Baking)와 글로우 방전(Glow discharge) 법을 병행하여 사용한다. Baking은 일반 기체(N2, O2, 그리고 CO2)와 물(H2O)의 탈착에 효과적이고, Glow discharge cleaning은 탄소(Carbon-based)와 산소(Oxygen-based) 화합물의 탈착에 효과적이다. 특히 Glow discharge cleaning의 경우에는 전극의 모양, 진공 용기의 재질과 모양, 전극간의 거리, 사용되는 반응 기체의 압력 등에 따라 그 효과에 큰 차이가 있으므로 다각적인 연구가 필요하다. 본 연구에서는 그림 1과 같이 시험용 스테인레스(AISI 304와 AISI 316LN) 진공 용기를 설치하고, 시험 용기의 한쪽은 배기 용기와 oriffice로, 다른 편은 불순물의 정성.정량 분석을 위해 RGA(Residual gas analyser) 용기와 oriffice로 연결하였다. 전체 시스템 중에서 배기 부분과 분석 부분은 15$0^{\circ}C$에서 24시간 가열하여 전체의 기저 진공도를 1$\times$10-8Torr로 하였다. 기저 진공도의 용기에 고순도의 반응기체 (He, Ar, Ar+He, Ar+H2, Ar+N2 등)를 주입한후, DC 전압(0.8~1.5kV)을 변화하며 글로우 방전의 최적조건을 찾았다. 방전 동안 시험용 용기에서 방출되는 반응 기체 이외의 기체를 RGA로 측정하였고 외부에 Thermocouple을 여러곳에 장착하여 온도 변화를 측정하였다. 이상의 결과로부터 진공 용기 표면적으로부터의 불순물 탈착(desorption)과 불순물 분석, 플라즈마와 내벽의 상호작용등에 대한 결론을 얻을 수 있었다. 또한 Baking과 Glow discharge cleaning을 동시에 수행하여 Baking 온도의 낮춤에 따른 영향 평가도 수행하였다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.2
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• pp.65-69
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• 2004

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.