• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.2
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• pp.146-150
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• 2010

Distribution Function and Drift velocities for electrons in $SF_6$-Ar mixtures gases used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method. The results obtained in this work will provide valuable information on the fundamental behaviors of electrons in weakly ionized gases and the role of electron attachment in the choice of better gases and unitary gas dielectrics or electro negative components in dielectric gas mixtures. The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.193-196
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• 2007

Energy distribution function for electrons in $SF_6-Ar$ mixtures gas used by Simulation has been analysed over the E/N range 30${\sim}$300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6-Ar$ mixtures were measured by time-of-flight (TOF) method. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.54 no.1
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• pp.29-33
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• 2005

Energy distribution function for electrons in $SF_6$-Ar mixtures gas by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltana equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other, authors, experimentally the electron swarm parameters for 0.2[%} and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The result show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Booltemann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.878-881
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• 2002

Energy distribution function for electrons in $SF_6+Ar$ mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30 ~ 300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6+Ar$ mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1150-1153
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• 2004

Diffusion coefficients Of electrons in $SF_6$-Ar mixtures gas used by MCS- BEq algorithm has been analysed over the E/N range $30\sim300$(Td) by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.22-25
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• 2004

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.124-125
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• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.72-75
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• 2001

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of $SF_6$ and $SF_6+Ar$ mixtures. The electron transport, ionization, and attachment coefficients for pure $SF_6$ and gas mixtures containing $SF_6$ has been analysed over the E/N range $30{\sim}300Td$ by a two term Boltzrnann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2% and 0.5% $SF_6+Ar$ mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2341-2344
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• 1999

In $SiH_4$ + Ar mixture gas contains 0.5% and 5% monosilane, this paper calculated electron swarm parameters in E/N has ratio 1$\sim$300(Td) and P : I (Torr) by MCS and Beq method. Electron swarm parameters showed a irregularity change in Ar mixed a little monosilane. It tends that the electron drift velocity is inversely proportional to E/N. It also represented characteristics that the transverse diffusion coefficient depends on E/N.