• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.56-62
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• 2021

In this study, we created a DBD plasma device and a MnO2 catalyst mesh filter for evaluating ozone reduction of devices via the catalyst method. The DBD plasma device was manufactured by applying Ag paste to soda lime glass via the screen-printing method. The MnO2 catalyst mesh filter was manufactured by mixing MnO2 powder with binder with a 10% difference in concentration from 10% to 50% and then applying it using the dip-coating method. Finally, we sintered a MnO2 catalyst mesh filter in an electric furnace. We evaluated the characteristics of ozone generation according to the Ar gas flow of DBD plasma devices, the opening ratio, and ozone reduction performance of the MnO2 catalyst filters. Ozone reduction performance was approximately 20.4% at MnO2 10 wt%, 37.8% at MnO2 30 wt% and 50% at MnO2 50 wt%.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.229-235
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• 2009

Millimeter-scale aligned arrays of thin-multiwalled carbon nanotube (t-MWCNT) on layered Si substrates have been synthesized by oxygen-assisted microwave plasma chemical vapor deposition (MPCVD). We have succeeded in growth of vertically aligned MWCNTs up to 2.7 mm in height for 150 min. The effect of $O_2$ and water vapour on growth rate was systematically investigated. In the case of $O_2$ gas, the growth rate was ${\sim}22{\mu}m/min$, which is outstanding growth rate comparing with those of conventional thermal CVD (TCVD). Scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), and Raman spectroscopy were used to analyze the CNT morphology, composition and growth mechanism. The role of $O_2$ gas during the CNT growth was discussed on.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Analytical Science and Technology
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• v.25 no.5
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• pp.265-272
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• 2012

Okamoto cavity was modified to generate high power (2.45 GHz, 2 kW) He, N2 and Ar plasmas with WR-340 waveguide. Many factors which influence to the plasma generation were optimized and investigated for the spectroscopic properties of the He plasma generated. Some of the important factors are the diameter of the inner conductor, the distance between the inner and outer conductors and the distance between the tip of the inner conductor and the torch. After optimization for the He, two torches (a commercial mini torch for ICP and a tangential flow torch made locally) were compared and showed similar results for the helium plasma gas flow of 25 L/min~30 L/min. A tall torch (extended) was used to block the air in-flow and reduced the background intensity at 340 nm region (NH band). Emission intensity was measured for determination of halogen element in the aqueous solution with power and carrier gas flow rate. Electron number density and the excitation temperature were on the order of $3.67{\times}10^{11}/cm^3$ and 4,350 K, respectively. These values are similar or a bit smaller than other microwave plasmas. It has been possible to analyze aqueous samples. The detection limit for Cl (479.45 nm) was obtained to be 116 mg/L and needs analytical optimization for the better performance.

• Resources Recycling
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• v.26 no.6
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• pp.3-9
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• 2017

In this study, plasma arc remelting behaviors according to arc current, arc voltage, and types of plasma gas were investigated using Kroll processed Ti sponges as anode. In the discharge pressure range of vacuum pump ($200{\sim}300kgf/cm^2$), the arc voltage did not vary greatly with the increase of discharge pressure at a given arc length. This means that the pressure in the vacuum chamber during operation hardly changes and the atmospheric pressure maintains. Under various conditions of arc currents (700~900A), the arc voltage slightly increased with arc current. The effects of anode materials and operational variables on the arc length-arc voltage relationship were compared with the results in previous studies. When the atmospheric gas changed from argon to helium, double effect of improvement on the output of the steady state was observed. The increase of output in the plasma arc device was accompanied by an increase in the melting rate of the Ti sponge and the quality of the ingot surface was also improved. The plasma arc remelting of the new scrap titanium and the old scrap zirconium alloy could result in the fabrication of an ingot with high surface quality.

• The Korean Journal of Nuclear Medicine Technology
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• v.16 no.1
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• pp.8-11
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• 2012

Purpose : Among quality control items, the radiochemical impurity must be below 10% of total radioactivity. In this regard, as the recently commercialized automatic synthesis module produces a large amount of 18F-FDG, radiolysis of radiopharmaceuticals is very likely to occur. Thus, this study compared the changes in radiochemical purity regarding radiolysis of $^{18}F$-FDG according to automatic synthesis module. Materials and methods : Cyclotron (PETtrace, GE Healthcare) was used to produce $^{18}F$ and automatic synthesis module (FASTlab, Tracerlab MX, GE Healthcare) was used to achieve synthesis into FDG. For radiochemical purity, Radio-TLC Scanner (AR 2000, Bioscan), GC (Gas Chromatograph, Agilent 7890A) was used to measure the content of ethanol included in $^{18}F$-FDG. Glass board applied with silica gel ($1{\times}10cm$) was used for stationary phase while a mixed liquid formed of acetonitrile and water (ratio 19:1) was used for mobile phase. High-concentration and low-concentration $^{18}F$-FDG were produced in each synthesis module and the radiochemical purity was measured every 2 hours. Results : The purity in low-concentration (below 2.59 GBq/mL) was measured as 99.26%, 98.69%, 98.25%, 98.09% in Tracerlab MX and as 99.09%, 97.83%, 96.89%, 96.62% in FASTlab according to 0, 2, 4, 6 hours changes, respectively. The purity in high-concentration (above 3.7 GBq/mL) was measured as 99.54%, 96.08%, 93.77%, 92.54% in Tracerlab MX and as 99.53%, 95.65%, 92.39%, 89.82% in FASTlab according to 0, 2, 4, 6 hours changes, respectively. Also, ethanol was not detected in GC of $^{18}F$-FDG produced in FASTlab, while 100~300 ppm ethanol was detected in Tracerlab MX. Conclusion : Whereas the change of radiochemical purity was only 3% in low-concentration $^{18}F$-FDG, the change was rapidly increased to 10% in high-concentration. Also, higher radiolysis were observed in $^{18}F$-FDG produced in FASTlab than Tracerlab MX. This is because ethanol is included in the synthesis stage of Tracerlab MX but not in the synthesis stage of FASTlab. Thus, radiolysis is influenced by radioactivity concentration than the inclusion of ethanol, which is the radioprotector. Therefore, after producing high-concentration $^{18}F$-FDG, the content must be diluted through saline to lower concentration.

• Analytical Science and Technology
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• v.15 no.5
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• pp.417-426
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• 2002

Inductively Coupled Plasma Dynamic Reaction Cell Quadrupole Mass Spectrometry (ICP-DRC-QMS) was characterized for the detection of the six naturally occurring calcium isotopes. The effect of the operating conditions of the DRC system was studied to get the best signal-to-noise ratio. This experiment shows that the potentially interfering ions such as $Ar^+$, ${CO_2}^+$, ${NO_2}^+$, $CNO^+$ at the calcium masses m/z 40, 42, 43, 44 and 48 were removed by flowing $NH_3$ gas at the rate of 0.7 mL/min $NH_3$ as reactive cell gas in the DRC with a RPq value (rejection parameter) of 0.6. The limits of detection for $^{40}Ca$, $^{42}Ca$, $^{43}Ca$, $^{44}Ca$, and $^{48}Ca$ were 1, 29, 169, 34, and 15 pg/mL, respectively. This method was applied to the determination of calcium in synthetic food digest samples (CCQM-P13) provided by LGC for international comparison. The isotope dilution method was used for the determination of calcium in the samples. The uncertainty evaluation was performed according to the ISO/GUM and EURACHEM guidelines. The determined mean concentration and its expanded uncertainty of calcium was ($66.4{\pm}1.2$) mg/kg. In order to assess our method, two reference samples, Riverine Water reference sample (NRCC SLRS-3) and Trace Elements in Water reference sample (NIST SRM 1643d), were analyzed.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.