• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.424-425
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• 2007

Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing super luminescent diode and reducing the reflection-induced intensity noise of laser diode. Anti-Reflection coating Film was designed by Macleod Simulator. Coating Materials were decided $Ti_3O_5$ and $SiO_2$. Thickness of Coating layer $Ti_3O_5/SiO_2$ were 105[nm], 165[nm]. In the study Anti-Reflection coating Film was design for Laser diode and deposited by Ion-Assisted Deposition system. Then manufactured thin film measured electrical properties(L-I-V, Se, Resistor) and Optical properties(wavelength FFP). Slop-efficiency and FFP characteristic is 0.302[W/A], $22.3^{\circ}$(Horizontal), $24.4^{\circ}$(Vertical).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.103-106
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• 2006

Semiconductor laser diode has a reflective facet in a both-ends side fundamentally. Laser performance for improving, Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing superluminescent diode and reducing the reflection-induced intensity noise of laser diode, it's key techniques are AR/HR coatings. In the study AR coating film were manufactured by Ion-Assisted Deposition(IAD) system. Then manufactured coating film measurement electrical properties(L-I-V, Se, Resistor) and Optical properties (wavelength FFP)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.127-127
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• 2009

The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.408-409
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• 2007

Ferrule function have connect Optical Communication Cable. But Ferrule have important role that is decided transmission efficiency and information quality. Key-point of detailed drawing of ferrule is Anti-Reflection. In the study Broadband Anti-Reflection coating Film was design for ferrule of optical connector and deposited in low temperature by Ion-Assisted Deposition system. Optical thin film materials($Ta_2O_5$, $SiO_2$) were manufactured Index and Film thickness. $Ta_2O_5$ index is 2.123 ~ 2.125 and $SiO_2$ is 1.44 ~ 1.442. Reflection Loss of film deposited on Ferrule is 30.1[dB].

• 한국재료학회지
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• 제24권12호
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• pp.689-693
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• 2014

Anti-reflection coating films have used to increase the transmittance of displays and enhance the efficiency of solar cells. Hydrophobic anti-reflection coating films were fabricated on a glass substrate by sol-gel method. To fabricate an anti-reflection film with a high transmittance, poly ethylene glycol (PEG) was added to tetraethyl orthosilicate (TEOS) solution. The content of PEG was changed from 1 to 4 wt% in order to control the morphology, thickness, and refractive index of the $SiO_2$ thin films. The reflectance and transmittance of both sides of the coated thin film fabricated with PEG 4 wt% solution were 0.3% and 99.4% at 500 nm wavelength. The refractive index and thickness of the thin film were n = 1.29 and d = 105 nm. Fluoro alkyl silane (FAS) was used for hydrophobic treatment on the surface of the anti-reflection thin film. The contact angle was increased from $13.2^{\circ}$ to $113.7^{\circ}$ after hydrophobic treatment.

• 한국재료학회지
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• 제28권12호
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• pp.714-718
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• 2018

Anti-reflection thin films are fabricated on glass substrates using the screen printing method. Tetra ethyl silicate(TEOS) and methyl tri methoxy silane(MTMS) are used as starting materials and buthyl carbitol acetate(BCA) and buthyl cellusolve(BC) are mixed to improve the viscosity of the solution. Anti-reflection thin films are fabricated according to the number of the screen mesh and the characteristics improve as the mesh size increases. The transmittance and reflectance of the coated thin film using 325 mesh are about 94 % and 0.43 % in the visible wavelength. The thickness and refractive index of the AR thin film are 107 nm and n = 1.26, respectively.

• 한국진공학회지
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• 제19권5호
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• pp.341-346
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• 2010

본 논문에서는 반응성 스퍼터링(Reactive Sputtering) 공정으로 $Si_xO_y$ 박막과 $Si_xN_y$ 박막을 4층 구조로 적층하고 400~700 [nm]의 가시광 영역에서 빛의 반사를 줄이기 위한 반사방지 코팅(Anti-Reflection Coating)으로의 응용 가능성을 조사하였다. 스퍼터링 타겟으로 6 [inch] 직경의 Si 단결정을 사용하였고, 반응성 스퍼터링 가스는 $Si_xO_y$ 박막 증착에서 Ar과 $O_2$를, $Si_xN_y$ 박막 증착에서는 Ar과 $N_2$를 사용하였으며, 스퍼터링 파워로는 DC pulse를 사용하였다. 1,900 [W] DC pulse power에서 Ar:$O_2$=70:13 [sccm]의 반응성 스퍼터링으로 2.3 [nm/sec]의 증착률과 1.50의 굴절률을 보이는 $Si_xO_y$ 박막을 제작하였고, Ar:$N_2$=70:15 [sccm]의 반응성 스퍼터링으로 1.8 [nm/sec]의 증착률과 1.94의 굴절률을 보이는 $Si_xN_y$ 박막을 제작하였다. 이 두 종류의 박막을 이용해서 시뮬레이션을 통해 4층 구조의 반사방지 코팅 구조를 설계한 후, 설계결과에 따라 각 박막의 두께를 순차적으로 변화시켜 증착하였다. 4층 구조 $Si_xO_y-Si_xN_y$의 반사도 측정 결과 550 [nm] 대역에서 1.7 [%]의 반사와 400 [nm]와 650 [nm] 영역에서 1 [%]의 반사를 보였으며, 가시광 영역에서 성공적인 "W" 형태의 반사방지 코팅 특성을 보였다.

• 한국세라믹학회지
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• 제44권10호
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• pp.585-588
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• 2007

Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.1-4
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• 2003

Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.

• 한국표면공학회지
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• 제50권6호
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• pp.480-485
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• 2017

Soft mold imprinting method that uses nanostructured polymer mold was investigated for anti-reflection film fabrication. The nanostructured soft mold was polyethylene terephthalate(PET) irradiated by oxygen ion beams. The collisional energy transfer between oxygen ion and the polymer surface induced cross-linking and scission reactions, resulting in self-organized nanostructures with regular patterns of the wavenumber of $5{\mu}m^{-1}$. Post processes including ultra-violet curable resin coating and delamination fabricated anti-reflection films. The imprinted resin surface also showed the consistent wavenumber, $5{\mu}m^{-1}$. Pristine PET, oxygen ion beam treated PET, and imprinted replica sample showed total transmittance of 91.04, 93.25, and 93.57-93.88%, respectively.