• Title/Summary/Keyword: Anodic Alumina

Search Result 92, Processing Time 0.026 seconds

Effect of Aluminum Purity on the Pore Formation of Porous Anodic Alumina

  • Kim, Byeol;Lee, Jin Seok
    • Bulletin of the Korean Chemical Society
    • /
    • v.35 no.2
    • /
    • pp.349-352
    • /
    • 2014
  • Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i.e., meshed pore, was produced.

Preparation of High-purity Porous Alumina Carrier for Gas Sensor (가스센서용 고순도 다공질 알루미나 담체의 제조)

  • 이창우;현성호;함영민
    • Fire Science and Engineering
    • /
    • v.11 no.3
    • /
    • pp.15-23
    • /
    • 1997
  • In this study, the alumina for gas sensor was prepared by anodic oxidation. It was stable thermally and chemically, and pore diameter and pore distribution was uniform. And the shape of pore was cylinderical. The aluminum plate was carried out by the thermal oxidation, chemical polishing and electropolishing pretreatment. The pore diameter, pore size distribution, pore density and thickness of alumina was observed with the change of reaction temperature, electrolyte concentration and current density. As a results, It was able to use for carrier because alumina which was prepared by anodic oxidationhas uniform pore size distribution.

  • PDF

Gas Permeation Characteristics of Porous Alumina Membrane Prepared by Anodic Oxidation (양극산화에 의한 다공성 알루미나 막의 기체투과 특성)

  • 함영민
    • Journal of environmental and Sanitary engineering
    • /
    • v.13 no.3
    • /
    • pp.72-78
    • /
    • 1998
  • For investigation into gas permeation characteristics, the porous alumina membrane with asymmetrical structure, having upper layer with 10 nanometer under of pore diameter and lower layer with 36 nanometer of pore diameter, was prepared by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. The aluminium plate was pre-treated with thermal oxidation, chemical polishing and electrochemical polishing before anodic oxidation. Because the pore size depended upon the electrolyte, electrolyte concentration, temperature, current density, and so on, the the membranes were prepared by controling the current density, as a very low current density for upper layer of membrane and a high current density for lower layer of membrane. By control of current quantity, the thicknesses of upper layer of membranes were about $6{\;}{\mu}m$ and the total thicknesses of membranes were about $80-90{\;}{\mu}m$. We found that the mechanism of gas permeation depended on model of the Knudsen flow for the membrane prepared at each condition.

  • PDF

Anodic Alumina Based DRAM Package Substrate (양극산화 알루미나 기반의 DRAM 패키지 기판)

  • Kim, Moon-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.11 no.3
    • /
    • pp.853-858
    • /
    • 2010
  • DRAM package substrate has been demonstrated using a thick alumina layer produced by aluminum anodization process. To apply a transmission-based design methodology, 2 dimensional electromagnetic simulation is performed. The design parameters including signal line width/spacing and alumina's thickness are optimized based on the simulation analysis and are verified with the fabrication and the measurement of the test patterns on the anodic alumina substrate. DDR2 DRAM package is chosen as a design vehicle. Aluminum anodization technique has been applied successfully to fabricate new DRAM package substrate.

ALLOY STRUCTURE AND ANODIC FILM GROWTH ON RAPIDLY SOLIDIFIED AL-SI-BASED ALLOYS

  • Kim, H.S.;Thompson, G.E.;Wood, G.C.;Wright, I.G.;Maringer, R.E.
    • Journal of the Korean institute of surface engineering
    • /
    • v.17 no.2
    • /
    • pp.29-40
    • /
    • 1984
  • The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

  • PDF

Development of control technique of nano-sized pattern for electroplating (나노급 도금공정을 위한 미세패턴 제어기술의 개발)

  • Lee, Jae-Hong;Lee, Byoung-Wook;Lee, Kyung-Ho;Kim, Chang-Kyo
    • Proceedings of the KIEE Conference
    • /
    • 2004.07c
    • /
    • pp.1576-1578
    • /
    • 2004
  • The alumina membrane with nano sized pore was prepared from aluminum by anodic oxidation to apply for storage equipment, gas sensor and stamper. The pore size and cell size of the pores are controlled by anodic oxidation voltage. The alumina thickness was controlled by etching process using 0.2M $H_3PO_4$. The thickness of alumina on Si wafer was very accurately controlled by anodic oxidation time. Nickel with nano-sized grain was electroplated on the Au layer on silicon wafer. The fabricated pores on alumina membrane was the thickness of $7{\sim}10{\mu}m$ with straight nano-sized pore of 307${\sim}$120nm. The alumina by the etching process shows smooth surface. The size of Ni grain was 130nm and 250nm for 10mA/$cm^2$and 20mA/$cm^2$of electroplating currents, respectively.

  • PDF

Fabrication of Nanowellstructured and Nanonetstructured Metal Films using Anodic Porous Alumina Film (다공성 알루미나 박막을 이용한 금속 나노우물과 나노그물 구조의 박막 제작)

  • Noh, Ji-Seok;Chin, Won-Bai
    • Journal of the Korean Vacuum Society
    • /
    • v.15 no.5
    • /
    • pp.518-526
    • /
    • 2006
  • Nanoporous alumina film was fabricated by anodization of an aluminum sheet. Highly ordered nanowellstructured and nanonets-tructured metal films were fabricated by vacuum evaporation of several metals(Al, Sn, and Co) using the anodic nanoporous alumina film as a template. In this experiment, an anodic porous alumina film with the cell size of 100 nm and the pore diameter of 60 nm was used. The resistance heating method was adopted for evaporating a desired metal, and vapor deposition was carried out under the base pressure of torr. It was founded that whether the structure fabricated by vacuum evaporation is nanowell or nanonet is dependent on the amount of deposited material. When an anodic porous alumina film with the cell size of 100 nm and the pore diameter of 60 nm was used, a nanowell-structured film was fabricated when a sufficient amount of metal was suppled to cover the surface pores. On the other hand, nanonet-structured film was fabricated bellow a half the amount of metal required for nanowell-structured film.

Fast Fabrication of Nanoporous Anodic Alumina Membrane by Hard Anodization (하드애노디제이션에 의한 나노다공질 양극산화 알루미나 멤브레인의 제조)

  • Ha, Yoon-Cheol;Jeong, Dae-Yeong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.429-429
    • /
    • 2009
  • Nanoporous anodic alumina membranes (NAAM) with high-density through-hole pores fabricated by hard anodization of aluminum in 0.3 M oxalic acid under the applied voltage of 40 (mild anodization), 80, 100, 120 and 140 V were investigated. The current-time responses monitored using a PC-controlled anodization cell and the corresponding pore structures attainable from field-enhanced scanning electron microscopy (FE-SEM) were analyzed in order to establish the optimum fabrication process. The nanoporous structure can be produced for all the voltage conditions, while the stabilized through-hole pore formation seems to occur at 40, 80 and 140 V. The growth rate under 140 V hard anodization was over 30 times higher than under 40 V mild anodization (1.5 um/hr).

  • PDF

A Study of Nanoscale Structure of Anodic Porous Alumina film (다공성 알루미나 박막의 나노 스케일 구조에 관한 연구)

  • 정경한;신훈규;권영수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.16 no.9
    • /
    • pp.801-806
    • /
    • 2003
  • In recent years, there has been large interest in the fabrication of the self organized nanoscale structures since not only their potential utilization in electronic, optoelectronic, and magnetic devices but also their fundamental interest such as uniformity and regularization. An attractive candidate of these materials is anodic porous alumina film(Al$_2$O$_3$) which is formed by the anodization of aluminum in an appropriate acid solution. In this study to fabricate the porous alumina film with very uniform and nearly parallel pores the anodization was carried out under constant voltage mode in 0.3M oxalic acid as an electrolyte. The hexagonally ordered arrays with a few $\mu\textrm{m}$ in size two-dimensional polycrystalline structure were obtained of which pore densities were 1.1${\times}$10$\^$10//$\textrm{cm}^2$.