• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.5-8
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• 2006

The effect of annealing time in Metal Organic Deposition(MOD) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pres sure of 700, 500, 300, 100, and 1 Torr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the an nealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to in crease the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over $1MA/cm^2$ using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced.

• Food Science and Preservation
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• v.19 no.2
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• pp.216-222
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• 2012

The optimum annealing conditions of corn starch slurry were studied for RS4 type resistant starch production by phosphorylated cross-linking. When a corn starch slurry was cross-linked by using phosphate salts (STMP/STPP mixture) in the presence of 0.9%, 1.2% and 1.5% NaOH/st.ds, a high concentration of NaOH resulted in a rapid increase of the RS contents at the early reaction stage. However, similar RS contents were obtained after 12 h of cross-linking regardless of NaOH concentrations. The annealing treatment was conducted under various conditions such as pH between 2-10, temperature $40-60^{\circ}C$, time 0-14 h followed by phosphorylated cross-linking. The lower slurry pH was for the annealing treatment, the higher RS contents were obtained after cross-linking. When the slurry annealed for various period of time and temperature, a maximal amount of RS was formed after 2 h of annealing at $50^{\circ}C$ of annealing temperature of the starch slurry (pH 2.0). Therefore, an optimal annealing conditions at pH 2.0 and $50^{\circ}C$ for 2 h were proposed under the cross-linking conditions of sodium sulfate 10%/st.ds, NaOH 1.2%/st.ds and 12 h of the reaction time. The RS contents were linearly increased with the increase of phosphate salt addition. The RS4 prepared under the optimal conditions contained RS 72.3% and its phosphorus content was 0.36%/st.ds, which was below the limit (0.4%/st.ds) of modified starch by Korea Food Additives Code.

• Journal of Power System Engineering
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• v.19 no.1
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• pp.70-75
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• 2015

The influence of reversed austenite on the damping capacity in austenitic stainless steel with two phase of martensite and reversed austenite was investigated. The two phases of deformation induced martensite and reversed austenite was obtained by an reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for various time after 70% cold rolling. With an increase of the reverse annealing treatment temperature and time, volume fraction of reversed austenite was rapidly increased. With an increase of volume fraction of reveresd austenite, damping capacity was rapidly increased. At same volume of reveresd austenite, damping capacity of reversed austenite obtained by reverse annealing treatment at $700^{\circ}C$ for various time was higher then reveresd austenite obtained by reverse annealing treatment at $500^{\circ}C{\sim}700^{\circ}C$ for 10min. Thus, the damping capacity was affected greatly by reversed austenite obtained by annealing treatment at $700^{\circ}C$ for various time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.103-107
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• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03b
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• pp.112-115
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• 1999

The effect of intermediate annealing on the texture evolution in I.f steel was investigated by using X-ray texture measurement. After The sample was cold rolled to 80% reduction intermediate annealing was introduced to preform ${\gamma}$-fiber orientation grains in deformed matrix. The annealing time was varied between 30 and 3600 sec, These samples were cold rolled to 90% reduction and full annealed. By intermediate annealing final full annealed samples had very homogeneous ${\gamma}$-fiber orientation resulting in good deep drawability.

• Transactions of Materials Processing
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• v.13 no.5
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.105-110
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• 2008

We have investigated the high temperature rapid thermal annealing of GaN epilayers in nitrogen atmosphere. Annealing has been performed in a rapid thermal annealing furnace at $950^{\circ}C$. The effect of rapid thermal annealing of GaN was studied by x-ray diffraction. The Bragg peak shifts toward larger angle as the annealing time increases. The full width at half maximum (FWHM) of the peak slightly increase, followed by decreases, and increases again as the thermal treatment time increases. The improvement of structural properties of the samples was observed after rapid thermal annealing under optimum conditions. This improvement in crystal quality is due to a reduction of the spread in the lattice parameter in epilayers.