• Korean Journal of Materials Research
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• v.13 no.12
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• Polymer(Korea)
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• v.27 no.2
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• pp.113-119
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• 2003

The thermal properties and crystallization behaviors of poly(ethylene terephthalate) (PET) were investigated by controlling the annealing conditions of PET sample, such as relative humidity, temperature, and time. The variations of moisture content, glass transition temperature ($T_g$) and cold crystallization temperature ($T_{\propto}$) were examined after annealing the PET sample. Subsequently crystallization process was performed with the annealed PET specimen, and then the degree of crystallinity and heat distortion temperature (HDT) of variously crystallized PET specimen were examined. Residual stress relaxation in the injection molded PET sample after annealing was also observed through polarized films. Moisture content in the PET specimen increased up to 6000 ppm with increasing the relative humidity, temperature, and time of annealing. $T_g$ and $T_{\propto}$ of the annealed PET specimen decreased with increasing moisture content. The degree of crystallinity increased as increasing moisture content in the PET specimen. However for same moisture content, the degree of crystallinity varied with annealing conditions. The relaxations of residual stress in the PET sample differed from annealing conditions, and the maximum degree of crystallinity increased with decreasing residual stress in the PET sample.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• Preventive Nutrition and Food Science
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• v.4 no.4
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• pp.215-220
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• 1999

The Physical properties of corn starch were investigated by scanning electron microscopy, X-ray diffractometry and differential scanning calorimetry during the formation of enzyme-resistant starch(RS). Samples were studied in their native states and after annealing at 50, 55, 60 and 65℃ in excess water(starch : water=1:3) for 48hr. Starch granules became smaller and more rounded after annealing than in their native state. Annealing did not change the X-ray profile of native corn starch. After autoclaving-cooling cycles, native starch lost most of its crystallinity but annealed ones showed some of their crystallinity left as diffuse or poor B-type, which didn't relate to increasing Rs yields. During formation of RS, however, both native and annealed starches changed their X-ray profile from A-type to poor B-type of retrograded amylose. Annealing caused an increase in gelatinization temperature and enthalpy, but a narrowing of gelatinization temperature range. Only starch annealed at 65℃, however, showed a decrease in enthalpy even though its gelatinization temperature increased, which appeared to be due to the partial gelatinization in the amorphous region during annealing. Peak height index(PHI), the ratio of ΔH to Ti-To, increased by annealing. PHI values, therefore, showed the possibility as an indicator to predict RS yield which cannot be differentiated by differential scanning calorimetry and X-ray diffraction data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.6
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• pp.307-313
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• 2008

The tensile deformation and shape recovery behaviors were studied in Ni-Ti shape memory wires showing different transformation characteristics by annealing at $200{\sim}600^{\circ}C$. Both R phase ${\rightarrow}$ B19' martensitic transformation at lower temperature and B2 ${\rightarrow}$ R phase transformation at higher temperature occurred in the shape memory wires annealed at $200{\sim}500^{\circ}C$. Transformation temperature and heat flow of B19' martensite increase but those of R phase main almost constant even with increasing annealing temperature. In the case of wires annealed and then cooled to $20^{\circ}C$, plateau on stress-strain curves in tensile testing can be observed due to the collapse of R phase variants and the formation of deformation-induced B19' martensite. In the case of wires annealed and then cooled to $-196^{\circ}C$, however, plateau on stress-strain curves does not appear and stress increases steadily with increasing tensile deformation. Comparing shape recovery rate with cooling temperature after annealing, shape recovery rate of the wire cooled to $20^{\circ}C$ is higher than that of the wire cooled to $-196^{\circ}C$ after annealing, and maximum shape recovery rate of 95% appears in the wire annealed at $400^{\circ}C$ and then cooled to $20^{\circ}C$. $R_s$ and $R_f$ temperatures measured during shape recovery tests are higher than $A_s$ and $A_f$ temperatures measured by DSC tests even at the same annealing temperature.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Korean Journal of Food Science and Technology
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• v.34 no.3
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• pp.431-436
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• 2002

To develop a method for increasing RS level in maize starch, cross-linked resistant starches treated with annealing were prepared. Maize starch and amylomaize VII were used in the study and annealed at $40{\sim}60^{\circ}C$ before cross-linking modification. To compare effect of annealing below gelatinization temperature, starches were heat treated at 70 and $100^{\circ}C$. RS contents were assayed by pancreatin-gravimetric (P/G) method. When maize starch and amylomaize VII were cross-linked at $45^{\circ}C$ and pH 11.0 by slurrying the starch on a solution of STMP(sodium trimetaphosphate), STPP(sodium tripolyphosphate), and sodium sulfate, RS content was 14.7% and 45.3%, respectively. Annealing below gelatinization temperature before cross-linking increased RS contents of prepared cross-linked starches but did not affect the swelling power. Heat treatment above gelatinization temperature increased the swelling power of cross-linked starch prepared from maize starch. The characteristics by X-ray diffractometry and scanning electron microscopy of cross-linked resistant starch were not changed by annealing.

• Progress in Superconductivity
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• v.1 no.1
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• pp.9-13
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• 1999

The influence of quenching temperature and annealing time on superconducting characteristics has been investigated for a $(Pb_{0.6}V_{0.4})Sr_2(Ca_{0.65}Er_{0.35})Cu_2O_z$ compound. From the resistivity measurements for samples annealed at $400^{\circ}C$ to $860^{\circ}C$ in oxygen and subsequently quenched, it is observed that $T_c$(zero) of the sample decreases with the increase of annealing temperature up to $600^{\circ}C$ and increases again beyond $700^{\circ}C$. Annealings of the sample at $860^{\circ}C$ show that $T_c$(zero) goes through a maximum of 62K with the increase of the annealing time. It is also found that $T_c$(zero) of the sample quenched from high temperature decreases when the sample is subjected to low temperature annealing below. $600^{\circ}C$ in oxygen. The experimental results indicate that the as-prepared samples contain excessive oxygen and removal of this excessive oxygen in as-prepared samples is a key factor in controlling the superconducting properties of the samples and are discussed in connection with thermal gravimetric measurements.

• Fashion & Textile Research Journal
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• v.9 no.3
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• pp.347-350
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• 2007

To analyse basic properties for making packing batt according to doubling condition, packing batt yarn, of $300^D$, $900^D$, $3600^D$ made from DTY yarn $150^D$/48 were produced from KTDI. The results are as follows: The birefringence of the sample yarn increased with increasing the annealing temperature and denier. The initial modulus of the sample yarn decreased with increasing the annealing temperature and denier. The higher than annealing temperature of $160^{\circ}C$, initial modulus of the sample are equilibrated. The strain recovery ratio of samples decreased with increasing the annealing temperature and denier. The lower than annealing temperature of $140^{\circ}C$, strain recovery ratio of the sample are decreased Where the $900^D$, $3600^D$ yarns are at $100^{\circ}C$ the specific bending rigidity value obtained is 0.65kgf/d but the twisted yarn (3,600) obtained 0.006 ($gfcm^2/tex^2$). However, where the heat temperature is $160^{\circ}C$, specific bending rigidity value obtained 0.003($gfcm^2/tex^2$).