• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 1999년도 제30차 춘계학술대회
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• pp.32-33
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• 1999

• 대한전기학회논문지
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• 제41권3호
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• pp.261-266
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• 1992

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.462-465
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• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.745-748
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• 2007

Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.209-212
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• 2001

High quality Taros thin films have been obtained from anodizing. The as-deposited amorphous films have excellent physical and electrical properties: refractive indices ~2.15, dielectric constants ~25, and leakage currents <10$^{-8}$ Ac $m^{-2}$ at 1MV $cm^{-1}$ , 700$\AA$ thickness. We fabricated a MIM element with theses T $a_2$ $O_{5}$ films which had perfect current-voltage symmetry characteristics using a new process technology which was post annealing of whole MIM element instead of conventional annealing conditions (top-electrode metals, annealing conditions) on the capacitor performances were extensively discussed throughout this work.k.

• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.

• Journal of Magnetics
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• 제1권1호
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• pp.24-30
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• 1996

The relationship between effective permeability and the remanence ratio of an Fe-based amorphous alloy (Metglas 2605S3A) is investigated over a wide frequency range, in an effort to understand magnetization behavior of the alloy. In the frequency range from 1 to 200 kHz, the permeability is maximum at the remanence ratio of 0.4-0.5 and, at frequencies over 500 kHz, the correlation with negative coefficients emerges indicating that the permeability decreases with the remanent ratio, except for the ribbon coated with an insulating layer of MgO which exhibits both high values of the effective permeability and remanence ratio. It is considered from the correlation results that the boundary at which the dominant magnetization mechanism changes from domain wall motion to spin rotation is near 500 kHz. The core loss is also investigated as a function of annealing time when the samples are annealed at a fixed temperature of $435^{\circ}C$. The core loss in most cases decreases with the annealing time, the degree of the loss may consist of the hysteresis loss and anomalous eddy current loss. The two loss components are considered to be of similar magnitudes at low frequencies while, at high frequencies, the dominant contribution to the total loss is the anomalous loss.

• Fibers and Polymers
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• 제3권1호
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• pp.18-23
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• 2002

The structure development and dynamic properties of fibers produced by high-speed spinning of P(EN-ET) random copolymers were investigated. The as-spun fibers were found to remain amorphous up to the spinning speed of 1500 m/min, and subsequent increases in speed resulted in the crystalline domains containing primarily $\alpha$ crystalline modification of PEN. The f modification was not found up to spinning speeds of 4500 m/min. On the other hand, annealing of constrained fibers spun at the 2100 m/min at 180,200, and 240^{\circ}C$ exhibited $\beta$-form crystalline structure, while the annealed fibers spun in 600-1500 m/min range exhibited dominantly $\alpha$-form. However $\beta$-form crystals disappeared above the spinning speed of 3000 m/min. With increasing spinning speeds from 600 to 4500 m/min, the storage modulus of as-spun fibers increased continuously and reached a value of about 10.4 spa at room temperature. The tan $\delta$curves showed the $\alpha$-relaxation peak at about 155-165^{\circ}C$, which is considered to correspond to the glass transition. The $\alpha$-relaxation peaks became smaller and broader, and shift to higher temperatures as the spinning speed increases, meaning that molecular mobility in the amorphous region is restricted by increased crystalline domain.

• 한국주조공학회지
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• 제28권1호
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• pp.31-36
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• 2008

Ti-Ni-Cu alloys are very attractive shape memory alloys for applications as actuators because of a large transformation elongation and a small transformation hysteresis. Rapidly solidified Ti-Ni alloy ribbons have been known to have the shape memory effect and superelasticity superior to the alloy ingots fabricated by conventional casting. In this study, solidification structures and shape memory characteristics of $Ti-Ni_{30}-Cu_{20}$ alloy ribbons prepared by melt spinning were investigated by means of DSC and XRD. Operating parameters to fabricate the amorphous ribbons were the wheel velocity of 55 m/s and the melt spinning temperature of $1500^{\circ}C$. The crystallization temperature was measured to be $440^{\circ}C$. The crystallized ribbons exhibited very fine microstructure after annealing at $440^{\circ}C$ for 10 minutes and $460^{\circ}C$ for 5 minutes and was deformed up to about 6.8% and 6.23% in ductile manner, respectively. Stress-strain curve of the ribbon exhibited a flat stress-plateau at 64 MPa and this is associated with the stress-induced a B2-B19 martensitic transformation. During cycle deformation with the applied stress of 220 MPa, transformation hysteresis and elongation associated with the B2-B19 transformation were observed to be $4.3^{\circ}C$ and 3.6%.