• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1999년도 추계학술대회 논문집 - 한국공작기계학회
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• pp.530-535
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• 1999

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving quality, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for the proper heating temperatures, heating time of cycle, cooling time and total cycle time in this annealing process of hi tensile strength steel for automobile. As a result of several investigation. we confirmed for the following characteristics; In this process, we knew that 68$0^{\circ}C$ is suitable for this heating temp. cycle heating time of 38 Hr, cooling time of 31 Hr and total cycle time of 70 Hr. Still more, we could know that it is proper for cold rolling before annealing to be managed by 7 pass because of the act on high pressure.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.366-370
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• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.209-213
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• 2000

Microstructural changes of AlOOH doped UO$_2$pellet after annealing up to 216h have been observed and they were compared with those of the standard pellet. Grain and pore size of UO$_2$pellet increased with the addition of AlOOH and its effect was still validated during annealing. Densification rate was reduced by the addition of AlOOH and it was attributed to coarsened pores with spherical shape. Grain and pore growth was stopped and density increase was the least after 144h of annealing. The variation of pore size resulting from annealing has a linear relationship with that of grain size.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.333-338
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• 1999

Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 춘계연구발표회 논문개요집
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• pp.70-71
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.87-87
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• 1994

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.124-124
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• 2006

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.98-99
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• 2003