• 한국세라믹학회지
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• 제43권9호
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• pp.532-536
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• 2006

The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.249-254
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• 2020

An 80 nm thick zinc aluminate thin film was deposited on a glass substrate via radio-frequency (rf) magnetron sputtering and heat treated to analyze changes in the wetting angles due to a surface modification. The thin films were modified from hydrophilic to hydrophobic by a simple thermal treatment. The surface modification from a heat treatment increased the wetting angles up to 111°, which was explained by the relationship with the excess surface area. The wetting angles of the annealed thin films decreased with increasing exposure time under ambient conditions, which was attributed to the oxygen vacancies in the films that were introduced during deposition. The annealed thin films were treated by ionized oxygen via oxygen plasma. After the oxygen plasma treatment, the decreased wetting angles were maintained at ~95° for 11 days.

• 공업화학
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• 제24권3호
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• pp.239-246
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• 2013

기존의 발포유리 제조공정의 원리는 원료유리분말을 거푸집에 담아 발포소성시키며, 발포소성 후에 발포체를 거푸집과 분리 후에 서냉 열처리를 하는 것이다. 이러한 이유로 기존의 발포유리 제조공정은 연속생산이 불가능하다. 본 연구에서는, 발포유리의 연속생산공정을 개발하기 위해서 거푸집을 사용하지 않는 대신, 원료유리분말을 가압성형하여 먼저 성형체를 만들고, 이 성형체를 발포시켜 발포유리를 생산하는 새로운 발포유리제조공정의 가능성을 타진하였다. 수화된 소다석회 유리분말을 사용하고 유리의 발포에 가장 핵심적인 발포제를 달리한 가압성형체를 발포소성시키는 실험 결과를 통해서, 거푸집을 사용하지 않고서도 발포유리의 연속생산공정이 가능할 수 있음을 확인하였다.

• 한국재료학회지
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• 제27권1호
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• pp.43-47
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• 2017

E (Electric) -glass fibers are the most widely used glass fibers, taking up 90 % of the long glass fiber market. However, very few papers have appeared on the physical characteristics of E-glass fibers and how they depend on the fiberizing temperature of fiber spinning. Glass fiber was fabricated via continuous spinning process using bulk E-glass. In order to fabricate the E-glass specimen, raw materials were put into a Pt crucible and melted at $1550^{\circ}C$ for 2hrs; mixture was then annealed at $621{\pm}10^{\circ}C$ for 2hrs. The transmittance and adaptable temperature for spinning of the bulk marble glass were characterized using a UV-visible spectrometer and a viscometer. Continuous spinning was carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1175{\sim}1250^{\circ}C$, while the winder speed was fixed at 500 rpm. Subsequently we investigated the physical properties of the E-glass fiber. The average diameter of the synthesized glass fiber was measured by optical microscope. The mechanical properties of the fiber were confirmed using a UTM (universal materials testing machine); the maximum tensile strength was measured and found to be $1843{\pm}449MPa$ at $1225^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• 열처리공학회지
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• 제26권2호
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• pp.55-58
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• 2013

ITO thin films deposited on glass substrate with RF magnetron sputtering were vacuum annealed at 100, 200 and $300^{\circ}C$ for 30 minutes and then effect of annealing temperature on the structural, electrical and optical properties of ITO films were investigated. The structural properties are strongly related to annealing temperature. The annealed films above $100^{\circ}C$ are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The electrical resistivity also decreases as low as $4.65{\times}10^{-4}{\Omega}cm$ with a increase in annealing temperature and ITO film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $43.6{\Omega}/{\Box}$. The optical transmittance in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 80.6% than those of the films prepared in this study.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• 한국재료학회지
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• 제22권12호
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• pp.650-657
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• 2012

For the purpose of improving the durability problem, translucent opal glass was fabricated as a substitute for the polycarbonate diffuser of LED lighting. Calcium phosphate was used as an opacifier of opal glass and melted in an electric furnace. The opaque effect was identified according to the change of the cooling procedure. As results, translucent opal glass was obtained by the melting of a batch with a composition of 3.8% calcium phosphate at $1550^{\circ}C$ for 2 hrs and then the cooling of the material in the furnace. For the cooling condition of the glass sample, HTCG (High Temperature Cooled Glass) was found to have better optical properties than LTAG (Low Temperature Annealed Glass). It had excellent optical properties for a diffuser of LED lighting, with no dazzling from direct light due to its high haze value of over 99% and low parallel transmittance value of under 1%. For the thermal properties, it had an expressed thermal expansion coefficient of $5.7{\times}10^{-6}/^{\circ}C$ and a softening point of $876^{\circ}C$; it also had good thermal properties such as good thermal shock resistance and was easy to apply to the general manufacturing process in the forming of glass tubes and bulbs. Therefore, it is concluded that this translucent opal glass can be used as a glass diffuser material for LED lighting with high heat resistance and high durability; this material is suitable as a substitute for polycarbonate diffusers.

• 열처리공학회지
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• 제27권4호
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• pp.175-179
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• 2014

IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates and then annealed in vacuum for 30 minutes at 100, 200 and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as deposited films were 91.9% and $901{\Omega}/{\Box}$, respectively, the films annealed at $300^{\circ}C$ show the optical transmittance of 95.4% and the sheet resistance of $383{\Omega}/{\Box}$. The experimental results indicate that vacuum-annealed IGZO film at $300^{\circ}C$ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.227-227
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.