• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.27-30
• /
• 2002

Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

• 한국재료학회지
• /
• 제19권1호
• /
• pp.24-27
• /
• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• 한국안광학회지
• /
• 제5권2호
• /
• pp.187-192
• /
• 2000

본 연구에서는 물 유리의 경제성을 바탕으로 광학적 및 기계적인 특성을 조사하여 투명하고 높은 경도를 가진 표면 보호막의 기능을 검토하기 위하여 $SiO_2-Na_2O-R_mO_n$계 박막을 제조하였다. 물 유리에 CaO와 $Al_2O_3$를 소량의 1 N HCl 1N $NH_4OH$와 함께 각각 첨가하여 코팅용 졸을 준비하였다. Stainless steel. Si wafer. soda-lime-silica glass등 다양한 기판 위에 spin-coating 한 후 질소 분위기 하에서 500, 750 및 $900^{\circ}C$로 최종 열처리를 행했다. 제조된 막은 Knoop 경도계로 micro-hardness를 측정하였다. 막의 표면 질소 함유량을 알아보기 위하여 EDX 분석을 행하였다. 그리고 Field Emission Scanning Electron Microscope(FE-SEM)을 이용하여 막의 표면구조를 관찰하였으며, UV-VIS 스펙트라 측정을 통하여 막의 두께와 반사 특성을 조사하였다.

• 한국자기학회지
• /
• 제5권5호
• /
• pp.636-640
• /
• 1995

FeN thin films were deposited on glass by RF diode reactive sputtering. The films were annealed in the air and in vacuum. The film annealed in the air showed sharp decrease of saturation magnetization and change of easy axis direction to hard axis direction and vice versa after $300^{\circ}C$ anneal. The coercivity decreased down to 0.5 Oe after $400^{\circ}C$ anneal. After $450^{\circ}C$ anneal, the film showed ${\varepsilon}-Fe_{2-3}N$ phase. The films annealed in vacuum showed coercivity increase after $300^{\circ}C$ anneal for the film deposited with initial substrate temperature of $35^{\circ}C$ and after $400^{\circ}C$ anneal for the film deposited with initial substrate temperatue of $170^{\circ}C$. These films showed $Fe_{16}N_{2}$ X-ray peaks after $450^{\circ}C$ anneal.

• 열처리공학회지
• /
• 제35권6호
• /
• pp.314-318
• /
• 2022

Transparent conducting ZnO/Ti/ZnO tri-layer films deposited on glass substrate with DC and RF magnetron sputtering were rapid thermal annealed at 150, 300 and 450℃ for 5 minutes and then effect of annealing temperature on the structural and optoelectronics properties of the films were investigated. The structural properties are strongly related to annealing temperature and the largest grain size is observed in the films annealed at 450℃. The electrical resistivity also decreases as low as 7.7 × 10^-4 Ωcm. The visible transmittance also depends on the annealing temperature. The films annealed at 450℃ show a higher transmittance of 80.6% in this study.

• 열처리공학회지
• /
• 제36권3호
• /
• pp.115-120
• /
• 2023

ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10^-3 Ωcm to 1.18 × 10^-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

• 한국재료학회지
• /
• 제34권7호
• /
• pp.355-362
• /
• 2024

AR (alkali resistant)-glass fibers were developed to provide better alkali resistance, but there is currently no research on AR-glass fiber manufacturing. In this study, we fabricated glass fiber from AR-glass using a continuous spinning process with 40 wt% refused coal ore. To confirm the melting properties of the marble glass, raw material was put into a (platinum) Pt crucible and melted at temperatures up to 1,650 ℃ for 2 h and then annealed. To confirm the transparent clear marble glass, visible transmittance was measured and the fiber spinning condition was investigated by high temperature viscosity measurement. A change in diameter was observed according to winding speed in the range of 100 to 700 rpm. We also checked the change in diameter as a function of fiberizing temperature in the range of 1,240 to 1,340 ℃. As winding speed increased at constant temperature, fiber diameter tended to decrease. However, at fiberizing temperature at constant winding speed, fiber diameter tended to increase. The properties of the prepared spinning fibers were confirmed by optical microscope, tensile strength, modulus and alkali-resistance tests.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.103-107
• /
• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• 한국세라믹학회지
• /
• 제54권6호
• /
• pp.484-491
• /
• 2017

Chalcogenide glasses have been investigated in their thermodynamic, structural, and optical properties for application in various opto-electronic devices. In this study, the $Sb_{20}Se_{80-x}Ge_x$ with x = 10, 15, 20, and 25 were selected to investigate the glass stability according to germanium ratios. The thermal, structural, and optical properties of these glasses were measured by differential scanning calorimetry (DSC), X-ray diffraction (XRD), and UV-Vis-IR Spectrophotometry, respectively. The DSC results revealed that $Ge_{20}Sb_{20}Se_{60}$ composition showing the best glass stability theoretically results due to a lower glass transition activation energy of 230 kJ/mol and higher crystallization activation energy of 260 kJ/mol. The structural and optical analyses of annealed thin films were carried out. The XRD analysis reveals obvious results associated with glass stabilities. The values of slope U, derived from optical analysis, offered information on the atomic and electronic configuration in Urbach tails, associated with the glass stability.

• 한국세라믹학회지
• /
• 제30권6호
• /
• pp.469-477
• /
• 1993

Residual stresses is one of the major factors to degrade the magnetic properties of VCR magnetic heads. Vicker's indentation technique was adapted to estimate the residual stresses Residual stresses and distribution in the glass and ferrite were obtained after bonding ferrite with glass, varing the cooling rate. The compressive and tensile stresses were developed in the interface and gradually decreased with increasing distance from the interface. The stresses were decreased with a cooling rate. The mean values of residual stress in ferrite were 10MN/㎡, 8MN/㎡, 5MN/㎡ with cooling rate 10℃/min, 5℃/min, 1℃/min respectively. When the bonded sample was annealed above the glass transition temperature followed by cooling at 5℃/min cooling rate, the residual stress was reduced to 6MN/㎡.