• 제목/요약/키워드: Amorphous silicon films

검색결과 288건 처리시간 0.026초

수소기처리에 의한 수소화된 비정질규소의 안정성에 관한 연구 (The Stability of Hydrogenated Amorphous Silicon by Hydrogen Radical Annealing)

  • 이재희;이원식
    • 한국진공학회지
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    • 제5권1호
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    • pp.73-76
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    • 1996

  • We have prepared hydrogenated amophous silicon (a-si : H) films with superlattice structure by hydrogen radical anneling(HRA) technique. We have studied the preparation of a-Si :H films by HRA and the optical & electronic characteristics. Optical band gap and the hydrogen contents in the a Si : H film is decreased as HRA time increased. We first report a -Si : H film prepared by periodicdeposition of a-Si : H layer and HRA have the superlattice structure using TEM . After 1 hour light soaking on the a-Si :H film prepared by HRA, there are no difference in the temperatre dependence of dark conductivity and the conductivity activation energy. An excellent stability for light in a-Si :H films by HRA can be explained using the long-range structural relaxation of the amorphous network and the propertiesof light -induced defects(LID) proposed by Fritzsche.

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압력센서용 Boron이 첨가된 다결정 Silicom 박막의 제조 (Fabrication of Boron-Doped Polycrystalline Silicon Films for the Pressure Sensor Application)

  • 유광수;신광선
    • 한국결정성장학회지
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    • 제3권1호
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    • pp.59-65
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    • 1993

  • 저항가열식 고진공증착기를 이용하여 압력센서로 사용될 수 있는 boron이 첨가된 다결정 silicon 박막이 제조되었다. 다결정 silicon 박막은 여러온도에서 quartz 기판위에 증착되었으며, boron은 BN 웨이퍼를 사용하여 확산로에서 doping하였다. $500^{\circ}C$의 기판온도에서 증착된 silicon 박막은 비정질이었으며, $600^{\circ}C$에서 결정을 보이기 시작하였고, $700^{\circ}C$에서 다결정이 되었다. $900^{\circ}C$에서 10분동안 boron을 dopion한 후, 박막의 비저항은 $0.1{\Omega}cm~1.5{\Omega}cm$의 범위에 있었으며, boron 밀도(농도)는 $9.4$\times$10^{15}~2.1$\times${10}^{17}cm^{-3}$이었고, 입자의 크기는 $107{\AA}~191{\AA}$이었다.

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감압화학증착의 이단계 성장으로 실리콘 기판 위에 증착한 in-situ 인 도핑 다결정 실리콘 박막의 미세구조 조절 (Manipulation of Microstructures of in-situ Phosphorus-Doped Poly Silicon Films deposited on Silicon Substrate Using Two Step Growth of Reduced Pressure Chemical Vapor Deposition)

  • 김홍승;심규환;이승윤;이정용;강진영
    • 한국전기전자재료학회논문지
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    • 제13권2호
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    • pp.95-100
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    • 2000

  • For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

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Superhard SiC Thin Films with a Microstructure of Nanocolumnar Crystalline Grains and an Amorphous Intergranular Phase

  • Lim, Kwan-Won;Sim, Yong-Sub;Huh, Joo-Youl;Park, Jong-Keuk;Lee, Wook-Seong;Baik, Young-Joon
    • Corrosion Science and Technology
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    • 제18권5호
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    • pp.206-211
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    • 2019

  • Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

  • https://doi.org/10.14773/cst.2019.18.5.206 인용 PDF KSCI