• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1239-1242
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• 1994

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}-Si:H$) and LPCVD(${\alpha}-Si$). The electrical and optical properties and surface roughness of crystallized thin films have been measured. The dc conductivities, crystallinity and surface roughness of the films increased as the laser energy density and shot density were increased. Also, we have investigated the effects of 2-step annealing employing SPC and ELA. The properties of 2-step annealed films were better than those of films annealed by ELA only.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.57-61
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• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.117-124
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• 1996

The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors($\mu$c-Si:H TFTs) using $\mu$-Si:H and a-SiN:H films have been fabricated by FECVD. The electrical characteristics of the devices have been investigated by semiconductor parameter analyzer and compared with amorphous silicon thin film transistors (a-Si:H TFTs). In this study, on/off current ratio, threshold voltage and the field effect mobility of the $\mu$c-Si:H TFT were $3{\times}10^{4}$, 5.06V and 0.94cm$^{2}$Vs, respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.147-152
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• 2002

A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.

• Journal of Surface Science and Engineering
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• v.44 no.2
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• pp.39-43
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• 2011

Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.