• Journal of Surface Science and Engineering
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• v.38 no.3
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• pp.100-105
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• 2005

Cr-Si-C-N coatings were deposited on steel substrate (SKD 11) by a hybrid system of arc ion plating (AIP) and sputtering techniques. From XRD, XPS, and HRTEM analyses, it was found that Cr-Si-C-N had a fine composite microstructure comprising nano-sized crystallites of Cr(C, N) well distributed in the amorphous phase of $Si_3N_4/SiC$ mixture. Microhardness of Cr(C, N) coatings and Cr-Si-N coatings were reported about $\~22 GPa$ and $\~35 GPa$, respectively. As the Si was incorporated into Cr(C, N) coatings, The Cr-Si-C-N coatings having a Si content of $9.2 at.\%$ showed the maximum hardness value. As increased beyond Si content of $9.2 at.\%$, the interaction between nanocrystallites and amorphous phase was gone, the hardness was reduced as dependent on amorphous phase of $Si_3N_4/SiC$. In addition, the average coefficient of Cr-Si-C-N coatings largely decreased compared with Cr(C, N) coatings.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.749-764
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• 2000

Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

• ETRI Journal
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• v.26 no.3
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• pp.257-261
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• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.245-249
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• 2000

Consolidation of amorphous powders is emerging as a route for synthesis of high strength composite materials. Diffusion processes necessary for consolidation are expected to be more rapid in amorphous state(SRO) than in the crystalline state(LRO). A new synthesis technique of exploiting polymeric ceramic precursors(polysilazane and polyborosilazane) is derived for Si$_3$N$_4$/SiC and boron-modified nanocomposites for extremely high temperature applications up to 200$0^{\circ}C$. The characterization methods include thermal analysis of DTA, and XRD, NMR, TEM, after pyrolysis, as a function of time and temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Journal of Surface Science and Engineering
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• v.40 no.6
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• pp.279-282
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• 2007

Cr-Mo-Si-C-N coatings were deposited on steel and Si wafer by a hybrid system of AIP and sputtering techniques using Cr, Mo and Si target in $Ar/N_2/CH_4$ gaseous mixture. Instrumental analyses of XRD and XPS revealed that the Cr-Mo-Si-C-N coatings must be a composite consisting of fine(Cr, Mo and Si)(C and N) crystallites and amorphous $Si_3N_4$ and SiC. The hardness value of Cr-Mo-Si-C-N coatings significantly increased from 41 GPa of Cr-Mo-C-N coatings to about 53 GPa with Si content of 9.3 at.% due to the refinement of (Cr, Mo and Si)(C and N) crystallites and the composite microstructure characteristics. A systematic investigation of the microstructures and mechanical properties of Cr-Mo-Si-C-N coatings prepared with various Si contents is reported in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.