• 제목/요약/키워드: Amorphous Material

검색결과 1,105건 처리시간 0.021초

비정질 IZO 애노드를 이용한 형광 유기발광소자의 특성 (Characteristics of Fluorescent Organic Light Emitting Diodes using Amorphous IZO Anode Film)

  • 문종민;배정혁;정순욱;강재욱;김한기
    • 한국전기전자재료학회논문지
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    • 제19권11호
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    • pp.1044-1049
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    • 2006
  • We reported on characteristics of the fluorescent OLED fabricated on commercial ITO/glass and BCS grown IZO/glass substrate, respectively. The amorphous IZO anode film grown by box cathode sputtering(BCS) exhibited similar electrical and optical characteristics to commercial ITO anode even though it was deposited at room temperature. In addition, the amorphous IZO anode showed higher workfunction (5.2 eV) than that of the commercial ITO anode (5.0 eV) after ozone treatment for 10 min. Furthermore, fluorescent OLED fabricated on amorphous IZO anode film showed improved current-voltage-luminance characteristics, external quantum efficiency and power efficiency en contrast with fluorescent OLED fabricated on commercial ITO anode film. It was thought that smooth surface and high workfunction of amorphous IZO anode lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers.

RF 스퍼터링 시스템을 이용하여 증착한 비정질 Ga2O3 박막의 스퍼터링 파워에 따른 특성 평가 (The Effect of Sputtering Power on Amorphous Ga2O3 Deposited by RF Sputtering System)

  • 김형민;박상빈;김경환;홍정수
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.488-493
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    • 2023
  • The effect of sputtering power on the amorphous Ga2O3 thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga2O3 is cheaper and more efficiently fabricated than crystalline Ga2O3, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga2O3 was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga2O3 can be obtained by adjusting the sputtering power, it indicates amorphous Ga2O3 can be used in various fields.

Fabrication of gelatin-amorphous CaP nano fibrous mat forusing as fast bone healing material

  • Sarkar, Swapan Kumar;Song, Ho-Yeon;Lee, Byong-Taek
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.40.2-40.2
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    • 2009
  • Using the favorable resorption behavior of amorphous Calcium phosphate (CaP) we fabricated a gelatin basednano fibrous mat by electrospinning for using as a fast healing patch for minorbone defects. Bone is predominantly formed by an inorganic phase of nano-crystalline HAp materials and nano fibrous protein material of collagen. The osteoblast cells, which are the bone formation cells and are key to the new bone formation, receive these materials to form new bone. Taking these considerations we make a new nano fibrous mat of amorphous CaP and gelatin, which is derived from collagen itself. A polymer carrier of poly caprolactone(PCL) was used in the system to stabilize the materials in biological condition. The electrospinning conditions were optimized for smooth mat without any droplet formation. The fabricated mat was characterized for its morphologyby SEM. Mechanical properties like tensile strength was evaluated. To investigate the bio-compatibility we performed the MTT assay and investigated its resorption behavior and apatite formation behavior by SBF immersion.

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졸-겔 법에 의해 절연코팅된 철계 비정질 리본의 자기특성 (Magnetic properties of Fe-based amorphous ribbon insulated by sol-gel process)

  • 송재성;김병걸;정순종;김현식ㅂ;황시돌
    • E2M - 전기 전자와 첨단 소재
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    • 제9권2호
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    • pp.159-164
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    • 1996
  • The development of an insulated coating which can be used for amorphous alloys is extremely important from the practical point of view. This importance may be enhanced by the influence of the coating on the magnetic properties. The purpose of this study is to show how new developed insulating coating materials and method influence the magnetic properties of amorphous Fe/sub 87/Zr/sub 7/B/sub 5/Ag/sub 1/(at%) ribbon.

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아몰포스선을 이용한 전력선의 자계분포 (Magnetic Field Distribution of Power Line Using Amorphous Wire)

  • Moriyama, T.;Cho, M.W.;Hikita, M.;Hong, J.W.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.609-612
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    • 2001
  • To investigate the magnetic field distribution of power line, we used amorphous wire sensor. And we discuss extremely low frequency magnetic field distribution dependent upon arrangement of power line and shielding pipe made from iron or alumimum materials by both measurement and FEM(Finite Element Method) analysis. Appling current of single phase 60 [Hz] 15 [A] is supplied to copper wire coated enamel resign. As the results, we confirmed that linear characteristics of amorphous wire sensor is very excellent and measurement value agrees with FEM calculation. Magnetic field distribution due to shielding materials is changed by permeability and conductivity.

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비정질 칼코게나이드 박막에서의 편광 홀로그라피 격자 형성 및 회절효율 측정 (Polarization Holographic Grating Formation and Diffraction Efficiency Measurement in Amorphous Chalcogenide Thin Films)

  • 전진영;여철호;이현용;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.89-92
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    • 1998
  • Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. The polarization holographic grating has been formed in amorphous As-Ge-Se-S thin films using two linearly polarized He-Ne laser light. In addition, dffraction efficiency has been measured by the same laser of a relative lower intensity at the same time.

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레이저 증착법에 의한 비정질 탄소계 박막의 제작 (Fabrication of amorphous carbon thin film using laser ablation technique)

  • 류정탁;김연보;조경제
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.484-487
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    • 2001
  • Amorphous carbon thin films were deposited using laser ablation technique on Si(100) substrates at different temperatures. In this study, effects of the substrate temperature on the properties of amorphous carbor, films were systematically investigated. The surface morphologic and structural properties of the films were studied by scanning electron microscopy (SEM) and raman spectroscope, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover the intensity ratio of D-band and G-band and the full width at half maximum of these bands were dependent on substrate temperatures.

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RF 마그네트론 스퍼터링법으로 성장된 Amorphous carbon 각막의 전계전자방출 (Field Electron Emission from Amorphous Carbon Thin Film Grown Using Rf Magnetron Sputtering Method)

  • 김연보;류정탁
    • 한국전기전자재료학회논문지
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    • 제14권3호
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    • pp.234-240
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    • 2001
  • Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

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박막 자심 인덕터의 제조와 특성 (Fabrication and Properties of Thin-Film Inductors with Magnetic Core)

  • 김현식;민복기;변우봉;김기욱;송재성;오영우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1314-1316
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    • 1997
  • In this study, We fabricated thin film magnetic core inductors by using thin film manufacturing techniques such as photolithography and wet etching process. The inductors were prepared using multi-layered CoNbZr/Cu/CoNbZr. These devices are measured at high frequency range of $1\;MHz{\sim}1\;GHz$.

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이종 물질의 접합계면에 의한 반도체 물질의 광학적 특성 (Optical Properties of Semiconductors Depending on the Contact Characteristic Between Different Groups)

  • 오데레사;노종구
    • 한국전기전자재료학회논문지
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    • 제27권2호
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    • pp.71-75
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    • 2014
  • To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.