• 한국표면공학회지
• /
• 제29권5호
• /
• pp.549-555
• /
• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

• 한국전기전자재료학회논문지
• /
• 제36권1호
• /
• pp.29-35
• /
• 2023

Herein we investigated the effect of the conductive agent on the electrochemical performance of the SiOx anode. SiOx anodes have a relatively low volume expansion (~160%) compared to Pure-silicon, but have a problem in that they have a poor electrical conductivity characteristic. In this study, physical and electrochemical measurements were performed using two 0-dimensional amorphous carbon conductive agents with different crystallinity and surface area. The crystal structure of the conductive agents and the local graphitization degree were analyzed through XRD and Raman, and the surface area of the particles was observed through BET. In addition, the electrical performance according to the graphitization degree of the conductive agents was confirmed through a 4-point probe. As a result of the electrochemical cycle and rate performance, it was confirmed that the performance of SiOx using a conductive agent having a low graphitization degree and a high surface area was improved. The results in this study suggest that the graphitization degree and surface area of the amorphous carbon conductive agent may play an important role in the SiOx electrode.

• 한국진공학회지
• /
• 제22권1호
• /
• pp.31-36
• /
• 2013

마이크로플라즈마 화학기상증착법(microwave plasma enhanced chemical vapor deposition, MPCVD)에 의하여 형성된 비정질 탄소 박막의 효율적인 도핑 공정을 위하여, 비정질 탄소 박막의 성장 직전 nucleated seed 상태의 기판 혹은 일부 성장된 박막 위에 비소(As) 이온을 이온 주입하였고 그 직후 다시 MPCVD에 의하여 박막을 성장시켰다. MPCVD에 의한 성장 자체가 약 $500{\sim}600^{\circ}C$ 온도에서의 어닐링 공정을 대체할 수 있으므로, 기존의 이온 주입 후 별도의 어닐링 공정과 비교 시 간략화된 공정으로도 어닐링 효과가 있다고 할 수 있다. 이온 주입 후 박막 성장으로 어닐링 효과를 얻은 비정질 탄소 박막의 경우, $2.5V/{\mu}m$의 전계에서 약 $0.1mA/cm^2$의 전계 방출 특성을 관찰할 수 있었고 또한 라만 스펙트럼 특성에서도 다이아몬드 특성 및 그래파이트 특성 모두 뚜렷이 관찰되었다. 전기적, 구조적 특성 관찰로부터 이온 주입된 As 이온이 자동 어닐링 효과에 의해 충분히 비정질 탄소 박막에 도핑되었다고 할 수 있다.

• 한국표면공학회지
• /
• 제56권5호
• /
• pp.328-334
• /
• 2023

The carbon-based films have various properties, which have been widely applied in industrial application. However, it has critical drawback for poor adhesion between films and metal substrate. In the present work, we have deposited carbon-based films on injection mold steel by plasma assisted chemical vapor deposition (PACVD). In order to improve adhesion, prior to film deposition, the substrate was nitriding-treated using PACVD. And its effect on the adhesion was investigated. Due to the pre-nitriding, the amorphous carbon nitride (a-CN:H) films presented 10 times higher adhesion (34.9 N) than that of un-nitirided. In addition, a friction coefficient was decreased from 0.29 to 0.15 for the amorphous carbon (a-C:H) due to improved adhesion. The obtained results demonstrated that pre-nitriding considerably improved the adhesion, and the relationship among adhesion, hardness, and surface roughness was discussed in detail.

• 한국세라믹학회지
• /
• 제37권4호
• /
• pp.376-380
• /
• 2000

Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

• 한국재료학회지
• /
• 제13권3호
• /
• pp.150-154
• /
• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.303.1-303.1
• /
• 2016

Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.

• 한국재료학회지
• /
• 제13권5호
• /
• pp.303-308
• /
• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.123-123
• /
• 2008

In this work, amorphous carbon thin films were deposited for hard mask applications by a reactive particle beam (RPB) assisted sputtering system at room temperature. The depositing characteristics of the films were investigated as functions of operating parameters such as reflector bias voltage and RF plasma power. It was confirmed that the deposition rate increased with increasing the reflector bias voltage and RF plasma power. By an atomic force microscope (AFM), it was revealed that the surface roughness was also increased. The total stress in films was determined by the use of the substrate curvature and its result will be discussed.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.477-477
• /
• 2012

The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The deposition characteristics of these films were studied as a function of NB energy (or reflector bias voltage). The film structures were investigated by Raman spectroscopy. The hardness was measured by nano-indentation tests and the optical band gap was measured by UV-visible spectroscopy.