• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• International Journal of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.10-15
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• 2012

In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.