• 한국자기학회지
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• 제4권1호
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• pp.12-19
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• 1994

비정질 $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ 합금의 $552^{\circ}C$에서 등온열처리시간에 따른 결정화 거동을 $M\"{o}ssbauer$ 분광법으로 연구하였다. 열처리된 시료는 $Do_{3}-FeSi$ 초미세결정립, Cu-cluster 및 비정질이 공존함이 $M\"{o}ssbauer$ spectrum 분석에 의해 확인되었다. 결정화 초기단계에 Cu-cluster가 형성되기 때문에 FeSi 초미세결정립의 Si함량은 높아지며, 열처리시간이 60분이 될 때까지 Si함량은 감소하는데 이는 FeSi 초미세결정립의 평균초미세자기장의 증가를 일으키며, 이후 Si함량은 거의 일정하다. 60분 이후의 열처리에서 FeSi 초미세결정립과 잔류비정질의 체적분율이 미소하게 변화함에도 잔류비정질의 평균초미세자기장이 감소하는 것은 잔류비정질에서의 Nb, B원자의 존재비의 증가에 기인된다. $552^{\circ}C$에서 60분 열처리 할 경우 FeSi 초미세결정립과 잔류비정질의 초미세자기장의 방향이 모두 무질서하게 분포된다. FeSi 초미세결정립과 Cu-cluster의 Avrami지수는 각각 0.51, 0.65, 잠복기는 각각 2.4분, 0.8분, 활성화에너지는 각각 2.35 eV, 2.44 eV이며, Cu-cluster가 FeSi 초미세결정립보다 먼저 생성된다는 것은 Cu 원자가 FeSi 초미세결정립의 생성을 촉진시킨다는 해석과 부합한다.

• 전기화학회지
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• 제17권1호
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• pp.49-56
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• 2014

탄소가 코팅된 일산화규소(C-coated SiO) 전극에서 전해질 첨가제로서 lithium bis(oxalato)borate(LiBOB)의 영향을 조사하였다. 전해질 조성은 1.3M $LiPF_6$/ethylene carbonate (EC), fluoroethylene carbonate (FEC), diethyl carbonate (DEC) (5:25:70 v/v/v)이며, 여기에 LiBOB을 0.5 wt.% 첨가한 것과 첨가하지 않은 2가지 전해질을 사용하였다. LiBOB을 첨가하지 않은 전해질에서 C-coated SiO 전극은 초기에 저항이 작은 피막이 형성되어 결정질의 $Li_{15}Si_4$를 형성할 때까지 합금화가 진행되며 동시에 큰 부피 변화를 보였다. 따라서 입자의 균열이 발생하고, 전극의 저항이 증가하여 충방전이 진행됨에 따라 용량이 빠르게 감소하였다. 반면에 LiBOB이 첨가된 전해질에서는 초기에 LiBOB의 환원분해에 의해 저항이 큰 피막이 형성되어, 합금화 반응이 원활히 진행되지 못하였다. 따라서 결정질 $Li_{15}Si_4$도 생성되지 못하였고, 결과적으로 부피변화도 적게 발생하므로 입자의 균열과 전극 저항의 증가도 적게 나타났다. 이러한 효과로 싸이클 후반부에서 용량감소가 적었고, 싸이클 성능도 좋은 결과를 보였다. 반면 피막 저항에 의한 영향이 줄어드는 $45^{\circ}C$ 에서는 LiBOB 첨가에 관계없이 합금화 반응이 유사하게 진행되며 비슷한 싸이클 성능을 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 한국재료학회지
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• 제4권1호
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• pp.81-89
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• 1994

전자빔 증착법을 사용하여 10nm두께의 Ti과 18nm두께의 Co를 Si(100)기판에 증착한 후, $N_{2}$분위기에서 $900^{\circ}C$, 20초 급속 열처리하여, Co/Ti 이중금속박막의 역전을 유도함으로서 $CoSi_{2}$박막을 형성하였다. 4점 탐침기로 측정한 면저항은 3.9Ω/ㅁ 었으며, 열처리 시간을 증가해도 이값은 유지하여 열적 안정성을 나타내었다. XRD 결과는 형성된 실리사이드는 기판과 에피관계를 갖는 $CoSi_{2}$상 임을 보였으며, SEM 사진은 평탄한 표면을 나타내었다. 단면 TEM 사진은 기판위에 형성된 박막층은 70nm 두께의 $CoSi_{2}$ 에피박막과 그위에 두개의 C0-Ri-Si합금층등 세개의 층으로 되어 있음을 보였다. AES 분석은, 기판상의 자연산화막을 형성할 수 있었음을 보여주었다. AES분석은, 기판상의 잔연산화막이 열처리초기, Ti에 의해 제거된후 Co가 원자적으로 깨끗한 Si기판에 확산하여 $CoSi_{2}$에피박막을 형성할 수 있었음을 보여주었다. $700^{\circ}C$, 20초 + $900^{\circ}C$, 20초 이중 열처리를 한 경우, $CoSi_{2}$결정성장으로 면저항값은 약간 낮아졌으나, 박막의 표면과 계면이 거칠었다. 이 $CoSi_{2}$에피박막의 실제 소자에의 적용방안과 막의 역전을 통한 에피박막형성의 기제를 열역학 및 kinetics 관점에서 고찰하였다.

• 마이크로전자및패키징학회지
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• 제18권2호
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• pp.49-55
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• 2011

전자기기에서의 고장 중 대부분은 작동 중 발생하는 열과 충격에 기인한다. 이 열과 충격은 PCB(Printed Board) 부품의 접합부 계면에 균열을 야기 시키고, 이 균열은 금속간 화합물(Intermetallic Compound: IMC)의 형성과 밀접한 관계를 가진다. 본 연구에서는 Sn-Ag-Cu계의 Ag함량을 변화한 Sn-1.0Ag-0.5Cu와 Sn-1.2Ag-0.5Cu 및 Sn-3.0Ag-0.5Cu의 3가지 조성의 솔더로 접합한 소재를 대상으로 1000시간 까지 등온시효(Isothermal Aging) 하였다. 등온시효 동 안 솔더(Solder)의 계면에 발생하는 IMC(Intermetallic Compound) 성장이 관찰되었으며, solder 접합부의 기계적 특성은 굽힘충격 시험법을 이용하여 평가되었다. 그 결과 시효처리 전에는 Ag 함량이 낮은 solder의 굽힘충격 특성이 우수하게 나타났으나, 시효처리 후에는 반대의 결과를 나타내었다. 이 결과는 IMC layer 주변에 생성된 미세한 $Ag_3Sn$ 및 조대한 $Cu_6Sn_5$와 관련되어, 미세한 $Ag_3Sn$이 충격을 완화한 것으로 나타나 이에 따라 굽힘충격 특성에 차이가 나타남을 알 수 있었다.

• Corrosion Science and Technology
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• 제11권1호
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• pp.1-8
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• 2012

The development of martensitic grades which can be processed in continuous galvanizing lines requires the reduction of the oxides formed on the steel during the hot dip process. This reduction mechanism was investigated in detail by means of High Resolution Transmission Electron Microscopy (HR-TEM) of cross-sectional samples. Annealing of a martensitic steel in a 10% $H_2+N_2$ atmosphere with the dew point of $-35^{\circ}C$ resulted in the formation of a thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film and amorphous $_{a-X}MnO.SiO_{2}$ oxide particles on the surface. During the hot dip galvanizing in Zn-0.13%Al, the thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was reduced by the Al. The $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides however remained embedded in the Zn coating close to the steel/coating interface. No $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formation was observed. During hot dip galvanizing in Zn-0.20%Al, the $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was also reduced and the amorphous $_{a-X}MnO.SiO_{2}$ and $a-SiO_{2}$ particles were embedded in the $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formed at the steel/coating interface during hot dipping. The results clearly show that Al in the liquid Zn bath can reduce the crystalline $_{C-X}MnO.SiO_{2}$ (x>1) oxides but not the amorphous $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides. These oxides remain embedded in the Zn layer or in the inhibition layer, making it possible to apply a Zn or Zn-alloy coating on martensitic steel by hot dipping. The hot dipping process was also found to deteriorate the mechanical properties, independently of the Zn bath composition.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 ISMP Pb-free solders and the PCB technologies related to Pb-free solders
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 ISMP Pb-free solders and the PCB technologies related to Pb-free solders
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Corrosion Science and Technology
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• 제15권3호
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• pp.120-124
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• 2016

The effect of alloying element Ca (0, 1, and 2 wt%) on corrosion resistance and bioactivity of the as-received and anodized surface of rolled plate AM60 alloys was investigated. A plasma electrolytic oxidation (PEO) was carried out to form anodic oxide film in $0.5mol\;dm^{-3}\;Na_3PO_4$ solution. The corrosion behavior was studied by polarization measurements while the in vitro bioactivity was tested by soaking the specimens in Simulated Body Fluid (1.5xSBF). Optical micrograph and elemental analysis of the substrate surfaces indicated that the number of intermetallic particles increased with Ca content in the alloys owing to the formation of a new phase $Al_2Ca$. The corrosion resistance of AM60 specimens improved only slightly by alloying with 2 wt% Ca which was attributed to the reticular distribution of $Al_2Ca$ phase existed in the alloy that might became barrier for corrosion propagation across grain boundaries. Corrosion resistance of the three alloys was significantly improved by coating the substrates with anodic oxide film formed by PEO. The film mainly composed of magnesium phosphate with thickness in the range $30-40{\mu}m$. The heat resistant phase of $Al_2Ca$ was believed to retard the plasma discharge during anodization and, hence, decreased the film thickness of Ca-containing alloys. The highest apatite forming ability in 1.5xSBF was observed for AM60-1Ca specimens (both substrate and anodized) that exhibited more degradation than the other two alloys as indicated by surface observation. The increase of surface roughness and the degree of supersaturation of 1.5xSBF due to dissolution of Mg ions from the substrate surface or the release of film compounds from the anodized surface are important factors to enhance deposition of Ca-P compound on the specimen surfaces.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.603-606
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• 2005

In this paper, the formation and thermal stability of Ni-silicide using Ni-Pd alloys is studied for ultra shallow S/D junction of nano-scale CMOSFETs. There are no different effects when Ni-Pd is used in single structure and TiN capping structure. But, in case of Cobalt interlayer structure, it was found that Pure Ni had lower sheet resistance than Ni-Pd, because of a thick silicide. Also, Ni-Pd has merits that surface of silicide and interface between silicide and silicon have a good morphology characteristics. As a result, Ni-Pd is an optimal candidate for shallow S/D junction when cobalt is used for thermal stability.