• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.9
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• pp.1-9
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• 1994

This paper analyzes the faults and their mechanism of CMOS ICs using IDDQ testing technique and evalutes the reliability of the chips that fail this test. It is implemented by the three testing phases, initial test, burn-in and life test. Each testing phase includes the parametric test, functional test, IDDQ test and propagation delay test. It is shown that the short faults such as gate-oxide short, bridging can be only detected by IDDQ testing technique and the number of test patterns for this test technique is very few. After first burn-in, the IDDQ of some test chips is decreased, which is increased in conventional studies and in subsequent burn-in, the IDDQ of all test chips is stabilized. It is verified that the resistive short faults exist in the test chips and it is deteriorated with time and causes the logic fault. Also, the new testing technique which can easily detect the rsistive short fault is proposed.

• The Journal of Engineering Research
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• v.2 no.1
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• pp.31-37
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• 1997

This paper describes the design and implementation of 8 bit ALU graphic simulator which helps students who study the structure and operation course of general ALU. ALU of this paper consists of three parts, arithmetic circuit, logic circuit, and shifter. Each of them performs as follows. Arithmetic circuit performs arithmetic operation such as addition, subtraction, 1 increment, 1 decrement, 2's complement, logic circuit performs logic operation such as OR, AND, XOR, NOT, and shifter performs shift operation and transfers the result of circuits of arithmetic, logic to data bus. The instructions which relate to these basic ALU functions was selected from Z80 instructions and ALU circuit was designed with those instructions and this designed ALU circuit was implemented on graphic screen. And all state of this data operation course in ALU was showed by bit and logic gate unit.

• Nuclear Engineering and Technology
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• v.48 no.2
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• pp.470-481
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• 2016

Field-programmable gate arrays (FPGAs) have received much attention from the nuclear industry as an alternative platform to programmable logic controllers for digital instrumentation and control. The software aspect of FPGA development consists of several steps of synthesis and refinement, and also requires verification activities, such as simulations that are performed individually at each step. This study proposed an integrated software-testing framework for simulating all artifacts of the FPGA software development simultaneously and evaluating whether all artifacts work correctly using common oracle programs. This method also generates a massive number of meaningful simulation scenarios that reflect reactor shutdown logics. The experiment, which was performed on two FPGA software implementations, showed that it can dramatically save both time and costs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.862-869
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• 2000

In a switch routing system, buffers are indispensible to prevent signal collision during routing process. For a photonic switching system, optical buffers are also indispensible if the system requires an active routing rather than a simple optical cross-connect(OXC). To cope with WDM technologies in optical comminication systems in these days, photonic switching system also has to deal with WDM signals. Therefore, optical buffers needed in a switching system has to be routed to the same output. For the receiver to recognize these signals separately, parallel WDM signals during rearrangement process. In this paper, we propose a novel all optical WDM output buffer whose structure, hardware, SNR and BER characteristics are improved a lot comparing with those of previously reported ones. From the analysis of the proposed buffer, the new buffer can hold 255 WDM cells keeping BER of 10-9 as long as a contrast ratio(gain on-off ratio) of optical gate(semiconductor optical amplifier) nside the buffer is 30dB.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.6
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• pp.51-57
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• 1980

Any switching function can be constructed with universal building block of MAND gate. Threelevel AND-NOT logic networks with only true inputs are called TANT networks. Systematic approach to TANT minimization starts from the UF type minterm with the smallest subscript and ends when UF type minterms are all covered. Optinal PEI is composed of CPPI or EPPi without C-C table. The algorithm in this work is usful in solving TANT optimization porblem of four or five variables by hand solution. When variable are six or more, it is required to be solved by computer, A CAD software package of this algorithm with FORTRAN IV language is made to solve such problems.

• Journal of information and communication convergence engineering
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• v.9 no.4
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• pp.435-440
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• 2011

This paper propose the method of constructing the highly efficiency adder and multiplier systems over finite fields. The addition arithmetic operation over finite field is simple comparatively because that addition arithmetic operation is analyzed by each digit modP summation independently. But in case of multiplication arithmetic operation, we generate maximum k=2m-2 degree of ${\alpha}^k$ terms, therefore we decrease k into m-1 degree using irreducible primitive polynomial. We propose two method of control signal generation for the purpose of performing above decrease process. One method is the combinational logic expression and the other method is universal signal generation. The proposed method of constructing the highly adder/multiplier systems is as following. First of all, we obtain algorithms for addition and multiplication arithmetic operation based on the mathematical properties over finite fields, next we construct basic cell of A-cell and M-cell using T-gate and modP cyclic gate. Finally we construct adder module and multiplier module over finite fields after synthesizing ${\alpha}^k$ generation module and control signal CSt generation module with A-cell and M-cell. Next, we constructing the arithmetic operation unit over finite fields. Then, we propose the future research and prospects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• Journal of Biosystems Engineering
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• v.34 no.2
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• pp.95-105
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• 2009

A method was proposed which employed control of the drop location of fertilizer particles on a spinner disc to optimize the spread pattern uniformity. The system contained an optical sensor as a feedback mechanism, which measured discharge velocity and location, as well as particle diameters to predict a spread pattern of a single disc. Simulations showed that the feed gate adaptation algorithm produced high quality patterns for any given application rate in the dual disc spreader. The performance of the feed gate control method was assessed using data collected from a Sulky spinner disc spreader. The results showed that it was always possible to find a spread pattern with an acceptable CV lower than 15%, even though the spread pattern was obtained from a rudimentary flat disc with straight radial vanes. A mathematical optimization method was used to find the initial parameter settings for a specially designed experimental spreading arrangement, which included the feed gate control system, for a given flow rate and swath width. Several experiments were carried out to investigate the relationship between the gate opening and flow rate, disc speed and particle velocity, as well as disc speed and predicted landing location of fertilizer particles. All relationships found were highly linear ($r^2$ > 0.96), which showed that the time-of-flight sensor was well suited as a feedback sensor in the rate and uniformity controlled spreading system.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.192-193
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• 1998

At Rutherford Appleton Laboratory(RAL), a high-repetition rate ps exicmer laser-plasma x-ray source has been developed for x-ray lithography with a calibrated output of up to 1 watt X-ray average power at 1nm wavelength. In a previous reports this compact x-ray source was used to print 0.18$\mu$m lines for a gate on Si-FET devices and deep three-dimensional structure with 100$\mu$m length, 25$\mu$m width, and 48 $\mu$m depth for a nanotechnology. The deep X-ray lithography is called as LIGA thchnology and getting a wide interest as a new technology for a nano-device. In this report all this works are summarized.