• 한국재료학회지
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• 제17권5호
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• pp.256-262
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• 2007

Effects of interlayer and the combination of different coating methods on the mechanical and corrosion behaviors of TiN and CrN coated on 420 stainless steel have been studied. STS 420 specimen were tempered at $300^{\circ}C$ for 1 hr in vacuum furnace. The TiN and CrN thin film with 2 ${\mu}m$ thickness were coated by arc ion plating and DC magnetron sputtering following the formation of interlayer for pure titanium and chromium with 0.2 ${\mu}m$ thickness. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and roughness tester. Mechanical properties such as hardness and adhesion also were examined. XRD patterns of TiN thin films showed that preferred TiN (111) orientation was observed. The peaks of CrN (111) and $Cr_2N$ (300) were only observed in CrN thin films deposited by arc ion plating. Both TiN and CrN deposited by arc ion plating had the higher adhesion and hardness compared to those formed by magnetron sputtering. The specimen of TiN and CrN on which interlayer deposited by magnetron sputtering and thin film deposited by arc ion plating had the highest adhesion with 22.2 N and 19.2 N. respectively. TiN and CrN samples shown the most noble corrosion potentials when the interlayers were deposited by using magnetron sputtering and the metal nitrides were deposited by using arc ion plating. The most noble corrosion potentials of TiN and CrN were found to be approximately -170 and -70 mV， respectively.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1397-1399
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• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

• 한국표면공학회지
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• 제28권6호
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• 한국세라믹학회지
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• 제27권7호
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국자기학회지
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• 제15권2호
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.152-153
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• 2002

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.429-430
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• 2000