• Journal of Korea Foundry Society
• /
• v.38 no.2
• /
• pp.32-40
• /
• 2018

Changes in the microstructures and mechanical properties of an AC2B alloy through solution heat treatment were investigated using recycled AC2B cutting chips as raw material. The as-cast microstructure of the AC2B alloy comprised ${\alpha}$-Al, $Al_2Cu$, and coarse needle-shaped phases considered to be eutectic Si and an Al-Fe-Si based intermetallic compound. After solution heat treatments at $505^{\circ}C$ for 1 h and 6 h, the samples showed complete dissolution of $Al_2Cu$ and relatively fine distribution of intermetallic compounds. Hardness test results showed that the hardness rapidly increased after the solution heat treatment for 1 h by solid solution hardening, and the increase of hardness exhibited a plateau from 1 h to 6 h. The results of the hardness and tensile tests showed that there was no visible difference in the effect of 1 h and 6 h solid solution treatment.

• Tribology and Lubricants
• /
• v.9 no.2
• /
• pp.56-62
• /
• 1993

Al-Pb-Cu and Al-Si-Pb-Cu bearing alloys were produced by forced-stirring method and water-cooled copper mold casting to investigate the effect of the precipitation hardening on the wear properties. Sliding of produced alloy pin against a steel disc were performed under various applied loads. Lowering the wear rate and material transfer phenomena were explained by the strengthening of $\theta'$ precipitates on AI matrix. The transmission electron microscope observation reveals the role of the precipitates in the alloys with Cu. The movement of dislocations was hindered by precipitates which resulted in the reduction of plastic deformation at the worn surfaces.

• Proceedings of the KWS Conference
• /
• 2002.10a
• /
• pp.555-560
• /
• 2002

Brazing of Al to Cu using AI-Si-Mg-Bi brazing alloy has been carried out in the vacuum furnace. In the bonded interlayer, there were two kinds of intermetallic compounds. One of these intermetallic compounds was e phase and the other was b phase. The growth of b phase was controlled by diffusion Al into Cu. Deformation behavior of Al-Cu brazing joint was brittle without deformation of the base metal. Shear strength of the joint was only about 20MPa. The shear specimen broken in the intermetallic compound, which was mainly e phase. Shear strength did not depend on the bonding temperature.

• Journal of Powder Materials
• /
• v.15 no.2
• /
• pp.142-147
• /
• 2008

The hypereutectic Al-20 wt%Si powders including some amount of Cu, Fe, Mg, Mn were prepared by a gas atomization process. In order to get highly densified Al-Si bulk specimens, the as-atomized and sieved powders were extruded at $500^{\circ}C$, Microstructure and tensile properties of the extruded Al-Si alloys were investigated in this study. Relative density of the extruded samples was over 98%. Ultimate tensile strength (UTS) in stress-strain curves of the extruded powders increased after T6 heat treatments. Elongation of the samples was also increased from 1.4% to 3.2%. The fracture surfaces of the tested pieces showed a fine microstructure and the average grain size was about $1{\mu}m$.

• Journal of Korea Foundry Society
• /
• v.33 no.6
• /
• pp.242-247
• /
• 2013

The most widely utilized commercial, aluminum-casting alloys are based on an aluminum-silicon system due to its excellent casting, and good mechanical, properties. Unfortunately, these Al-Si based alloys are inherently poor energy conductors; compared to pure aluminum, because of their high silicon content. This means that they are not suitable for applications demanding high eletrical or thermal conductivity. Therefore, efforts are currently being made to develop new, highly-conductive aluminum-casting alloys containing no silicon. In this research, a number of properties; including potential for castability, were investigated for a number of Al-Fe-Zn-Cu alloys with varying Cu content. As the copper content was increased, the tensile strength of Al-Fe-Zn-Cu alloy tended to increase gradually, while the electrical conductivity was slightly reduced. Fluidity was found to be lower in high-Cu alloys, and susceptibility to hot-cracking was generally high in all the alloys investigated.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.5
• /
• pp.234-237
• /
• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.189-190
• /
• 2011

Cu가 기존 배선물질인 Al을 대체함에 따라 resistance-capacitance (RC) delay나 electromigration (EM) 등의 문제들이 어느 정도 해결되었다. 그러나 지속적인 배선 폭의 감소로 배선의 저항 증가, EM 현상 강화 그리고 stability 악화 등의 문제가 지속적으로 야기되고 있다. 이를 해결하기 위한 방법으로 Cu alloy seed layer를 이용한 barrier 자가형성 공정에 대한 연구를 진행하였다. 이 공정은 Cu 합금을 seed layer로 사용하여 도금을 한 후 열처리를 통해 SiO2와의 계면에서 barrier를 자가 형성시키는 공정이다. 이 공정은 매우 균일하고 얇은 barrier를 형성할 수 있고 별도의 barrier와 glue layer를 형성하지 않아 seed layer를 위한 공간을 추가로 확보할 수 있는 장점을 가지고 있다. 또한, via bottom에 barrier가 형성되지 않아 배선 전체 저항을 급격히 낮출 수 있다. 합금 물질로는 초기 Al이나 Mg에 대한 연구가 진행되었으나, 낮은 oxide formation energy로 인해 SiO2에 과도한 손상을 주는 문제점이 제기되었다. 최근 Mn을 합금 물질로 사용한 안정적인 barrier 형성 공정이 보고 되고 있다. 하지만, barrier 형성을 하기 위해 300도 이상의 열처리 온도가 필요하고 열처리 시간 또한 긴 단점이 있다. 본 실험에서는 co-sputtering system을 사용하여 Cu-V 합금을 형성하였고, barrier를 자가 형성을 위해 300도에서 500도까지 열처리 온도를 변화시키며 1시간 동안 열처리를 실시하였다. Cu-V 공정 조건 확립을 위해 AFM, XRD, 4-point probe system을 이용하여 표면 거칠기, 결정성과 비저항을 평가하였다. Cu-V 박막 내 V의 함량은 V target의 plasma power density를 변화시켜 조절 하였으며 XPS를 통해 분석하였다. 열처리 후 시편의 단면을 TEM으로 분석하여 Cu-V 박막과 SiO2 사이에 interlayer가 형성된 것을 확인 하였으며 EDS를 이용한 element mapping을 통해 Cu-V 내 V의 거동과 interlayer의 성분을 확인하였다. PVD Cu-V 박막은 기판 온도에 큰 영향을 받았고, 200 도 이상에서는 Cu의 높은 표면에너지에 의한 agglomeration 현상으로 거친 표면을 가지는 박막이 형성되었다. 7.61 at.%의 V함량을 가지는 Cu-V 박막을 300도에서 1시간 열처리 한 결과 4.5 nm의 V based oxide interlayer가 형성된 것을 확인하였다. 열처리에 의해 Cu-V 박막 내 V은 SiO2와의 계면과 박막 표면으로 확산하며 oxide를 형성했으며 Cu-V 박막 내 V 함량은 줄어들었다. 300, 400, 500도에서 열처리 한 결과 동일 조성과 열처리 온도에서 Cu-Mn에 의해 형성된 interlayer의 두께 보다 두껍게 성장 했다. 이는 V의 oxide formation nergyrk Mn 보다 작으므로 SiO2와의 계면에서 산화막 형성이 쉽기 때문으로 판단된다. 또한, V+5 이온 반경이 Mn+2 이온 반경보다 작아 oxide 내부에서 확산이 용이하며 oxide 박막 내에 여기되는 전기장이 더 큰 산화수를 가지는 V의 경우 더 크기 때문으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.505-506
• /
• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.221-221
• /
• 2009

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.7
• /
• pp.517-521
• /
• 1998

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.