Browse > Article
http://dx.doi.org/10.4313/TEEM.2010.11.5.234

Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si  

Kim, Do-Kyung (School of Electrical and Electronic Engineering, Yonsei University, Korea and System LSI Samsung Electronics Co. Ltd.)
Bae, Jung-Hyeon (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
Kang, Myung-Koo (Samsung Mobile Display)
Publication Information
Transactions on Electrical and Electronic Materials / v.11, no.5, 2010 , pp. 234-237 More about this Journal
Abstract
Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.
Keywords
Thermite reaction; CuO nanowire; Selective area crystallization; RF sputtering;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. Prakash, A. V. McCormick, and M. R. Zachariah, Chem. Mater. 16, 1466 (2004) [DOI: 10.1021/cm034740t].   DOI   ScienceOn
2 J. Noro, A. S. Ramos, and M. T. Vieira, Intermetallics 16, 1061 (2008) [DOI: 10.1016/j.intermet.2008.06.002].   DOI   ScienceOn
3 J. Wang, E. Besnoin, A. Duckham, S. J. Spey, M. E. Reiss, O. M. Knio, and T. P. Weihs, J. Appl. Phys. 95, 248 (2004) [DOI: 10.1063/1.1629390].   DOI   ScienceOn
4 F. Mikulec, J. Kirtland, and M. Sailor, Adv. Mater. 14, 38 (2002) [DOI: 10.1002/1521-4095(20020104)14:1<38::aidadma38>3.0.co;2-z].   DOI
5 M. Hossain, S. Subramanian, S. Bhattacharya, Y. Gao, S. Apperson, R. Shende, S. Guha, M. Arif, M. Bai, K. Gangopadhyay, and S. Gangopadhyay, J. Appl. Phys. 101, 054509 (2007) [DOI: 10.1063/1.2450672].   DOI   ScienceOn
6 X. Jiang, T. Herricks, and Y. Xia, Nano Lett. 2, 1333 (2002) [DOI: 10.1021/nl0257519].   DOI   ScienceOn
7 S. H. Fischer and M. C. Grubelich, 32nd AIAA/ASME/SAE/ASEE Joint Conference and Exhibit (Lake Buena Vista, FL 1996 Jul. 1-3) SAND95-2448C.
8 J. H. Bae, D. K. Kim, T. H. Jeong, and H. J. Kim, Thin Solid Films 518, 6205 (2010) [DOI: 10.1016/j.tsf.2010.03.175].   DOI   ScienceOn
9 K. B. Plantier, M. L. Pantoya, and A. E. Gash, Combust. Flame 140, 299 (2005) [DOI: 10.1016/j.combustflame.2004.10.009].   DOI   ScienceOn