• Korean Chemical Engineering Research
• /
• v.53 no.5
• /
• pp.620-626
• /
• 2015

$Ho^{3+}$ doped $SrAl_2O_4$ upconversion phosphor powders were synthesized by spray pyrolysis, and the crystallographic properties and luminescence characteristics were examined by varying activator concentrations and heattreatment temperatures. The effect of organic additives on the crystal structure and luminescent properties was also investigated. $SrAl_2O_4:Ho^{3+}$ powders showed intensive green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$. The optimal $Ho^{3+}$ concentration in order to achieve the highest luminescence was 0.1%. Over this concentration, emission intensities were largely diminished via a concentration quenching due to dipole-dipole interaction between activator ions. According to the dependence of emission intensity on the pumping power of a laser diode, it was clear that the upconversion of $SrAl_2O_4:Ho^{3+}$ occurred via the ground state absorption-excited state absorption processes involving two near-IR photons. Synthesized powders were monoclinic as a major phase, having some hexagonal phase. The increase of heat-treatment temperatures from $1000^{\circ}C$ to $1350^{\circ}C$ led to crystallinity enhancement of monoclinic phase, reducing hexagonal phase. The hexagonal phase, however, did not disappear even at $1350^{\circ}C$. When both citric acid (CA) and ethylene glycol (EG) were added to the spray solution, the resulting powders had pure monoclinic phase without forming hexagonal phase, and led to largely enhancement of crystallinity. Also, N,N-Dimethylformamide (DMF) addition to the spray solution containing both CA and EG made it possible to effectively reduce the surface area of $SrAl_2O_4:Ho^{3+}$ powders. Consequently, the $SrAl_2O_4:Ho^{3+}$ powders prepared by using the spray solution containing CA/EG/DMF mixture as the organic additives showed about 168% improved luminescence compared to the phosphor prepared without organic additives. It was concluded that both the increased crystallinity of high-purity monoclinic phase and the decrease of surface area were attributed to the large enhancement of upconversion luminescence.

• Korean Chemical Engineering Research
• /
• v.48 no.5
• /
• pp.654-659
• /
• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3290-3294
• /
• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.2
• /
• pp.315-322
• /
• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Current Photovoltaic Research
• /
• v.4 no.1
• /
• pp.12-15
• /
• 2016

Screen printing technique followed by firing has commonly been used as metallization for both laboratory and industrial based solar cells. In the solar cell industry, the firing process is usually conducted in a belt furnace and needs to be optimized for fabricating high efficiency solar cells. The printed-Al layer on the silicon is rapidly heated at over $800^{\circ}C$ which forms a layer of back surface field (BSF) between Si-Al interfaces. The BSF layer forms $p-p^+$ structure on the rear side of cells and lower rear surface recombination velocity (SRV). To have low SRV, deep $p^+$ layer and uniform junction formation are required. In this experiment, firing process was carried out by using conventional tube furnace with $N_2$ gas atmosphere to optimize $V_{oc}$ of laboratory cells. To measure the thickness of BSF layer, selective etching was conducted by using a solution composed of hydrogen fluoride, nitric acid and acetic acid. The $V_{oc}$ and pseudo efficiency were measured by Suns-$V_{oc}$ to compare cell properties with varied firing condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.115-118
• /
• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.101-101
• /
• 2011

투명전도성산화물(transparent conducting oxides, TCOs) 박막으로써 널리 쓰이는 산화인듐주석(indium tin oxide, ITO)은 전기 전도성과 광 투과성이 우수하여 주로 유기발광다이오드(organic light-emitting diode, OLED)의 전극, 발광다이오드(light-emitting diode, LED)의 current spreading 층 및 태양전지(solar cell)의 윈도우층(window layer) 등의 광전자 소자로 응용되고 있으나, 고가의 indium 가격과 인체에 유해한 독성 등이 문제점으로 지적되고 있다. 따라서 indium의 함량을 저감한 새로운 조성의 TCO 또는 indium을 함유하지 않은 친환경적인 TCO 대체 재료 개발의 필요성이 증대되고 있다. 이러한 재료 중 하나인 AZO (Al-doped zinc oxide, $Al_2O_3$: 2 wt.%)는 3.82eV의 넓은 에너지 밴드갭을 가지며, 가시광선 및 근 적외선 파장 영역에 대하여 90% 이상의 높은 투과율을 나타낸다. 또한, 습식식각이 가능하며, 매우 풍부하여 원가가 매우 저렴하고, 독성이 없다. 본 연구에서는 박막 증착율이 높고, 제작과정의 조정이 용이한 RF magnetron 스퍼터를 이용하여 glass 기판 위에 AZO 박막을 성장하고, $N_2$ 분위기에서 다양한 온도 조건에서 열처리(rapid thermal annealing, RTA)하여 전기 및 광학적 특성에 대하여 비교 분석하였다. 또한, 이후에 기존의 성장방법과 달리 고가의 진공 장비를 사용하지 않고, 저온에서도 간단한 구조의 장비를 이용하여 균일한 나노구조를 성장시킬 수 있는 전기화학증착법(electrochemical deposition)으로 AZO 박막위에 ZnO 나노로드를 다양한 성장조건에 따라 성장시켜 광학적 특성을 비교 분석하였다.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.50-56
• /
• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• Journal of Surface Science and Engineering
• /
• v.45 no.1
• /
• pp.20-24
• /
• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.7
• /
• pp.8-16
• /
• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.