• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.444-449
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• 2010

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline $Si_3N_4$ ceramics were affected by the density, ${\alpha}:{\beta}$-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of $\alpha-Si_3N_4$, AlN, MgO, and h-BN at $1850^{\circ}C$. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped $Si_3N_4$ ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.77-84
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• 2005

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• Korean Chemical Engineering Research
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• v.55 no.6
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• pp.861-867
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• 2017

In order to improve the capacity and cycling stability of Ni-rich NCA cathode materials for lithium ion batteries, the boron and cobalt were doped in commercial $Li_{1.06}Ni_{0.91}Co_{0.08}Al_{0.01}O_2$ (NCA) powders. Commercial NCA particles are mixed composites such as secondary particles of about $5{\mu}m$ and $12{\mu}m$, and the particle size was decreased by doping boron and cobalt. The initial discharge capacities of the boron and cobalt doped NCA-B and NCA-Co were found to be 214 mAh/g and 200 mAh/g, respectively, which are higher values than that of the raw NCA cathode material. In particular, NCA-Co exhibits the best discharge capacity of 157 mAh/g after 20 cycles, which is probably due to the enhanced diffusion of lithium ion by crystal growth along with the c-axis direction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.896-900
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• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

• Polymer(Korea)
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• v.32 no.4
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• pp.372-376
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• 2008

Vacuum deposited 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2-TNATA), used as a hole injection (HIL) material in OLEDs, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in the devices. C60-doped 2-TNATA:C60 (20 wt%) film was formed via co-evaporation process and molecular ordering and topology of 2-TNATA:C60 films were investigated using XRD and AFM. The J-V, L-V and current efficiency of multi-layered devices were characterized as well. Vacuum-deposited C60 film was molecularly oriented, but neither was 2-TNATA:C60 film due to the uniform dispersion of C60 molecules in the film. By using C60-doped 2-TNATA:C60 film as a HIL, the current density and luminance of a multi-layered ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al device were significantly increased and the current efficiency of the device was increased from 4.7 to 6.7 cd/A in the present study.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.102-102
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• 2011

ZnO는 우수한 전기적, 광학적 특성으로 LED, solar cell 등과 같은 광전자소자의 응용을 목적으로 많은 연구가 진행되고 있다. 최근에는 ZnO 동종접합을 만들고자 많은 연구가 진행되고 있으나 p형 ZnO의 낮은 용해성과 높은 불순물에 따른 제조의 어려움으로 현재까지는 n형 ZnO만이 전도성 기판 위에 성장되어 응용되고 있다. 전도성 기판으로서 Si의 경우 낮은 가격, 공정의 용이함 등으로 GaN, SiC 등의 기판에 비하여 많은 응용이 가능하다. 따라서 본 연구에서는 전기화학증착법을 이용하여 p-n 접합을 형성하기 위하여 p형 Si 기판 위에 n형 ZnO 나노구조를 성장하고 그 특성을 분석하였다. 전기화학증착법은 낮은 온도 및 간단한 공정과정으로 빠른 성장 속도를 가지고 나노구조를 효과적으로 성장할 수 있는 방식이다. Seed 층 및 열처리에 따른 n형 ZnO 나노구조의 성장 특성 분석을 위하여 radio frequency (RF) magnetron 스퍼터를 사용하여 ZnO 및 Al doped ZnO (AZO) seed 층을 p형 Si 기판 위에 증착 후 다양한 온도로 열처리를 수행하였다. 질산아연(zinc nitrate)과 HMT가 희석된 용액에 KCl 촉매를 일정량 첨가한 후 다양한 공정 온도, 공정시간 및 질산아연의 몰농도를 변화시켜 n형 ZnO 나노구조를 성장하였다. 성장된 나노구조의 특성은 field emission scanning microscopy (FE-SEM), energy dispersive X-ray (EDX), photoluminescence (PL) 등의 장비를 사용하여 구조적, 광학적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.