• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Transactions of Materials Processing
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• v.19 no.4
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• pp.230-235
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• 2010

Titanium alloy sheets have excellent specific strength and corrosion resistance as well as good performance at high temperature. Recently, titanium alloys are widely employed not only for aerospace parts but also for bio prothesis and motorcycle. However, the database is insufficient in the titanium alloy for press forming process. In this study, the effect of temperature on the forming limit diagram was investigated for Ti-6Al-4V titanium alloy sheet through the Hecker‘s punch stretching test at elevated temperature. Experimental results obtained in this study can provide a database for the development of press forming process at elevated temperature of Ti-6Al-4V titanium alloy sheet. From the experimental studies it can be concluded that the formability of Ti-6Al-4V titanium alloy sheet is governed by the ductile failure for the testing temperature. The formability of Ti-6Al-4V titanium alloy sheet at $700^{\circ}C$ increases about 7 times compared with that at room temperature.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.152-157
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• 2009

Titanium alloy sheets have excellent specific strength and corrosion resistance as well as good performance at high temperature. Recently, titanium alloys are widely employed not only aerospace parts but also bio prothesis and motorcycle. But the database is insufficient of the titanium alloy for press forming process. In this study, the effect of temperature on the forming limit diagram was investigated for Ti-6Al-4V titanium alloy sheet through the Hocker's punch stretching test at elevated temperature. Experimental results obtained in this study can provide a database for development of press forming process at elevated temperature of Ti-6Al-4V titanium alloy sheet. From the experimental studies it can be concluded that the formability of Ti-6Al-4V titanium alloy sheet is governed by the ductile failure for the testing temperature below and vice versa neck-induced failure above the recrystalization temperature $0.5T_m$. The formability of Ti-6Al-4V titanium alloy sheet at $750^{\circ}C$ increases about 7 times compared with that at room temperature.

• Transactions of Materials Processing
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• v.9 no.1
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• pp.27-34
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• 2000

Sheet metal formabilities for aluminum 1050 and 5052 were experimentally investigated in this study. Deep drawability, bendability and stretch formability were measured at each process condition and correlated with tensile properties of sheet metal. To compare the formabilities of aluminum 1050 and 5052 sheets with those of steel sheets, deep drawing quality(DDQ) steel sheets are also tested at the same test conditions. Through the experimental studies, influential process variables for each forming process were obtained and correlated with the tensile properties. The comparisons of sheet metal formabilities with those of steed sheets showed that aluminum 1050 and 5052 is inherently deficient in formability than steel sheets but Al 5052 that has highter n and r value than al 1050 showed better formabilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.131-132
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• 2007

An AlGaN/GaN high electron mobility transistor(HEMT) was fabricated and the effect of photoelectrochemical oxidation of AlGaN/GaN surface was investigated. The oxidation of AlGaN surface was done in water at the bias of 10 V under the deep UV light illumination. The sheet resistance of the AlGaN/GaN structure was increased and gate leakage current of the HEMT was decreased by the oxidation. However, the transconductance of the HEMT was not degraded by the oxidation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.71-74
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• 2008

The clad sheet is the sheet metal that joined the one or more material with the different property by rolling process. In this study, it is investigated about the mechanical property or formability of SUS-Al-Mg clad sheet. The clad sheet was formed at elevated temperature because of their poor formability at room temperature. The tensile test was confirmed at various temperature and the reduction of strain rate above $250^{\circ}C$. LDR(Limited Drawing Ratio) was obtained through deep drawing test to confirm the formability of the clad sheet. The FE analysis is performed to compare prototype products.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.16-24
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• 2017

The adsorption of various atmospheric harmful gases ($CO_x$, $NO_x$, $SO_x$) on graphene-like boron nitride(BN) and aluminum nitride(AlN) sheets was theoretically investigated using density functional theory (DFT) and MP2 methods. The structures were fully optimized at the $B3LYP/6-31G^{**}$ and $CAM-B3LYP/6-31G^{**}$ levels of theory and confirmed to be a local minimum by the calculation of the harmonic vibrational frequencies. The MP2 single-point binding energies were computed at the $CAM-B3LYP/6-31G^{**}$ optimized geometries. Also the zero-point vibrational energy (ZPVE) and 50%-basis set superposition error (BSSE) corrections were included. The adsorptions of gases on the BN sheet were predicted to be a physisorption process and the adsorptions of gases on the AlN sheet were predicted to be a physisorption process for $CO_x$ and $NO_x$ but to be a chemisorption process for $SO_x$.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.