• Corrosion Science and Technology
• /
• v.5 no.2
• /
• pp.52-61
• /
• 2006

Recently, much of the current development in surface modification engineering are focused on multilayered coatings. Multilayered coatings have the potential to improve the tribological properties. Four different multilayered coatings were deposited on AISI D2 steel. The prepared samples are designed as $WC-Ti_{0.6}Al_{0.4}N$, $WC-Ti_{0.53}Al_{0.47}N$, $WC-Ti_{0.5}Al_{0.5}N$ and $WC-Ti_{0.43}Al_{0.57}N$. The multilayered coatings were investigated with respect to coating surface and cross-sectional morphology, roughness, adhesion, hardness, porosity and tribological behavior. Especially, wear tests of four multilayered coatings were performed by using a ball-on-disc configuration with a linear sliding speed of 0.017 m/sec, 5.38 N load. The tests were carried out at room temperature in air by employing AISI 52100 steel ball ($H_R=66$) having a diameter of 10 mm. The surface morphology, and topography of the wear scars of samples and balls have been determined by using scanning electron spectroscopy (SEM). Results have showed an improved wear resistance of the $WC-Ti_{1-x}Al_xN$ coatings with increasing of Al concentration. $WC-Ti_{0.43}Al_{0.57}N$ coating with the lower surface roughness and porosity with good adhesion enhanced wear resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.252-252
• /
• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• Applied Chemistry for Engineering
• /
• v.10 no.7
• /
• pp.1061-1065
• /
• 1999

The effect of particle size of coating powder and coating temperature on the thickness of coating layer formed on metal surface was studied by using XRD, SEM and EDXS. Coating powder was separated according to particle size by 3 steps and coating temperatures were varied from $950^{\circ}C$ to $980^{\circ}C$. Calorizing carried out at air and Ar conditions for 5 hrs, respectively. XRD result show that $Al_2O_3$ and AlN were formed during calorizing at air condition. The thickness and Al content of coating layer increased as the particle size of coating powder decreased and coating temperature increased.

• Korean Journal of Materials Research
• /
• v.27 no.7
• /
• pp.364-368
• /
• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Journal of Welding and Joining
• /
• v.18 no.5
• /
• pp.105-111
• /
• 2000

The wear behavior of thermal sprayed AlSiMg-40TiC composite coatings were studied as a function of load and sliding velocity under unlubricated conditions. Experiments were performed using a block-on-ring(WC-6wt%/Co, Hv 1500) type. The tests were carried out a various load(30∼ 125.5N) and sliding velocity(0.5∼2.0m/s). Three wear rate regions were observed in the AlSiMg-40TiC composite coatings. The wear rate in region I at low load (less then 8N( were less than 1×{TEX}$10^{-5}${/TEX}㎣/m. Low wear rates in region I resulted from the load-bearing capacity of TiC particles. The transition from region I to II occurred when the applied load exceeded the fracture and pull-out strength of the particles. The TiC fractured particles trapped between the specimen and the counterface acted as third-body abrasive wear. The subsurface layer worn surface in region II was composed of the mechanically mixed layer (MML). The wear rate increase abruptly above a critical load (region III). The high wear rate in region III was induced by frictional temperature and involves massive surface damage.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.3
• /
• pp.106-110
• /
• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Transactions on Semiconductor Engineering
• /
• v.1 no.1
• /
• pp.9-13
• /
• 2023

An AlGaN/GaN heterojunction-based hydrogen sensor with SnO₂ nanoparticles/Pd catalyst layer was fabricated for room-temperature hydrogen detection. The fabricated sensor exhibited unstable drift in standby current when it was operated at room temperature. The instability in the sensing signal was dramatically improved when the sensor was operated under UV illumination.

• Journal of the Korean Society for Precision Engineering
• /
• v.27 no.8
• /
• pp.54-61
• /
• 2010

In this research KP-4, one of the plastic mold steels, was coated with the AlTiN from one layer to four layers by the PVD method in the $\Phi$ cemented carbide ball end mill. Coated KP-4 was processed with various conditions. For example, slope of $15^{\circ}$, $30^{\circ}$ and $45^{\circ}$ the spindle rotation speed was changed from 10,000rpm to 16,000rpm, the tool feeding speed was changed from 1,300mm/min to 1,700mm/min, the depth of cut was also changed from 0.3mm to 0.9mm, and etc. Cutting component force according to the coating layer number, surface roughness, and the wear of tool were studied.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.76-76
• /
• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.897-902
• /
• 1998

We prepared Organic LED with a two layer structure by vacuum evaporation. The diode consisted of hole transfer layer (thickness of 30, 50, 70 nm) and electron transfer layer (thickness of 70, 50, 30 nm) material, which was N, N'-diphenyl- N, N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine)(TPD) and tris(8-hydroxy quinoline) aluminum(Alq3), respectively. We investigated EL properties of the LED with various thickness and cathode electrode. The best results were obtained when thickness of the electron layer is equal to that of emission layer and when AlLi alloy was used as a cathode. The EL intensity, luminance and efficiency of organic LED with equal of layer thick were improved seven, three and two times, respectively. Alq3 was ionized by carrier injection from cathode and could produce exitons. After electron-hole pairs were formed by combination of the electrons and holes at the emission layer, Alq3 layer emitted light.