• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.264-267
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• 2015

AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al₂O₃/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N₂ + O₂) gas-mixture rates. The Al₂O₃ of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.3
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• pp.281-288
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• 2004

The hybrid composite material (Al/GFRP laminates) are applied to the fuselage and wing in a aircraft. Therefore, Al/GFRP laminates suffer from the cyclic bending moments. This study was to evaluate the effect of fiber stacking angle on the fatigue crack propagation and delamination behavior using the relationship between crack growth rate (da/dN) and stress intensity factor range (ΔK) in Al/GFRP laminates under cyclic bending moment. The variable delamination growth behavior in case of three different type of fiber orientations, i.e., [Al/O$_2$/Al], [Al/+45$_2$/Al] and [Al/90$_2$/Al] at the interface of Al layer and glass fiber layer was measured by ultrasonic C-scan images. As results of this study, It represent that the delamination shape should turns out to have more effective characteristics on the fiber stacking angle. The extension of the delamination zone in case of [Al/+45$_2$/Al] and [Al/90$_2$/Al] were not formed along the fatigue crack profile. The shape of delamination zone depend on fiber stacking angle and the variable type with the delamination contour decreased non-linearly toward the crack tip at the Al layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.44-47
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• 2004

Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.242-245
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• 2009

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of $60\sim200\;{\mu}m$ and were grown with a growth rate of $0.2\sim0.5\;{\mu}n/hr$. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.151-157
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• 2000

This study aims to investigate the effect of carbon content on the surface nitrogen permeation of 13%Cr-1.8%Al alloyed stainless steels. The surface nitrogen permeation was performed at $1050^{\circ}C{\sim}1200^{\circ}C$ in the $1kg/cm^2$ nitrogen gas atmosphere. The nitrogen permeated surface layer of the specimen containing 0.03%C consists of AlN, martensite and retained austenite phases. while the surface layer of the specimen containing 0.14%C appears the $AlFe_3C_x$ phase including former three phases. The specimen containing 0.14%C shows lower total case depth than that containing 0.03%C at the nitrogen permeation temperatures of $1050^{\circ}C$ and $1100^{\circ}C$, while the total case depth of the specimen containing 0.14%C is remarkably increased at the temperature of $1150^{\circ}C$ and $1200^{\circ}C$ due to the increase in the retained austenite content. Martensitic phase, AlN and $AlFe_3C_x$ precipitate of the nitrogen permeated surface layer cause to increase the surface hardness of 550~600Hv.

• Journal of IKEEE
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• v.23 no.3
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• Corrosion Science and Technology
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• v.11 no.1
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.