• Progress in Superconductivity
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• v.13 no.2
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• pp.117-121
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• 2011

We have fabricated $FeSe_x$ superconducting thin films at much different substrate temperatures of 430 and $610^{\circ}C$ on $Al_2O_3$(0001) substrates by using a pulsed laser deposition (PLD) technique. Superconducting transitions for both films were shown around 10 K, but their transition width and growth directions of grains were different. We found that superconducting tetragonal FeSe phases and non-superconducting hexagonal FeSe phases were coexisted in the sample grown at the low temperature of $430^{\circ}C$, whereas the hexagonal FeSe phase was decreased with increasing fabrication temperatures.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1280-1283
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• 2005

A novel zinc complex, Zn(phen)q, was synthesized from 1,10-phenanthroline (phen) and 8-hydroxyquinoline (q) as organic ligands and its electroluminescent (EL) properties were characterized. The structure of Zn(phen)q was elucidated by FT-IR, UV-Vis and XPS. The complex Zn(phen)q showed thermal stability up to $300^{\circ}C$ under nitrogen flow, which was measured by TGA and DSC. The photoluminescence (PL) of the Zn(phen)q was measured from the THF solution and the solid film on quartz substrate. The PL emission of Zn(phen)q exhibited green light centered at about 505nm. The EL devices were fabricated by the vacuum deposition. The EL devices having the structure of ITO/a-NPD/Zn(phen)q/Li:Al were studied, where 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(a-NPD) used as a hole transport layer(HTL). a-NPD has high Tg of $96^{\circ}C$ and thus makes the device thermally stable. The EL emission of Zn(phen)q exhibited also green light centered at 532nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.473-473
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• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.281-290
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• 2011

In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.88-91
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.107-116
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• 1992

The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.126-126
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• 2000

다이아몬드상 카본(DLC) 필름은 경도가 높고, 마찰계수가 낮다는 장점을 가지고 있기 때문에 내마모성 코팅이나 윤활성코팅에 응용을 위한 연구가 활발히 진행중이다. 하지만 마찰계수가 주변환경에 매우 큰 영향을 받는다는 단점이 있다. 이러한 단점은 DLC필름의 응용에 대한 저해 요인이 되며, 이 점을 보완하기 위해서 DLC 필름에 Si을 첨가하는 연구들이 진행되고 있다. 본 실험에서는 r.f-PACVD 법을 이용하여 Si이 첨가된 DLC 필름의 주위 환경 변화에 따른 마찰특성의 변화를 연구하였다. 사용한 반응 가스는 벤젠(C6H)과 희석된 Silane(SiH4 : H2 = 10 : 90)이며, 희석된 Silane과 벤젠의 첨가비율을 조절하여 필름내 Si의 함량을 조절하였고, 증착시 바이아스의 전압은 -400V로 하였다. 마찰테스트는 Ball-on-Disk type의 조건에서 대기, 건조공기, 진공의 세가지 분위기에서 마찰테스트를 실행하였다. 실험결과 마찰계수는 건조공기, 대기, 진공의 순으로 증가하였고, 필름내에 포함되어 있는 Si의 양이 증가할수록 마찰계수는 낮고 안정한 값을 나타내었다. Tribochemiacal 분석과, ball과 track의 전자현미경 사진 분석 결과, 진공에 비해서 건조공기와 대기중에서 마찰계수가 낮은 것은 DLC 필름내에 마모 track 중심부에 Si-C-O 계의 화합물이 형성되어, 이 화합물이 마찰계면에 존재하여 마찰계수를 낮추었음을 확인하였다. 그리고 대기중에서 실험한 경우, 습기의 존재로 인해 마모입자가 볼의 표면에서 엉김으로써 건조공기의 상태에서 보다 높은 마찰저항을 갖게 됨으로 인하여 마찰계수가 높아짐을 알 수 있었다.a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.dical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다. 때문으로 생각되어진다. 또한, 성장 온도가 낮아짐에 따라 AlGaN의 성장을 저해하기 때문으로 판단된다. 성장 온도 변화에 따라 성장된 V의 구조적 특성 및 표면 거칠기 변화를 관찰하여 AlGaN의 성장 거동을 논의하겠다.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품