Fabrication and Characteristics of $SnO_{2}/Al_{2}O_{3}/Pd$ Thick Film Devices for Detection of $CH_{3}CN$ Vapor

$CH_{3}CN$ 감지를 위한 $SnO_{2}/Al_{2}O_{3}/Pd$ 후막소자의 제조 및 그 특성

The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high.

$CH_{3}CN$ 감지를 위한 최적 모물질은 $CH_{3}CN$의 억분해 온도와 생성량을 적외선 흡수 스펙트럼으로부터 비교함으로써 선정되었다. $SnO_{2}$ 표면에서 $CH_{3}CN$은 $130^{\circ}C$에서부터 열분해되기 시작하여 $300^{\circ}C$에서는 많은 양의 생성물을 생성하였다. 산화반응에 의한 $CH_{3}CN$은 $CO_{2}$, $NH_{3}$ 및 $H_{2}O$로 열분해되었으며, $320^{\circ}C$에서부터 $N_{2}O$가 생성되기 시작하였다. $SnO_{2}$ 감지소자의 $CH_{3}CN$에 대한 감지특성은 $CH_{3}CN$과 금속산화물과의 산화반응으로 인해 생성된 흡착종에 의해 영향을 받았다. 감지물질표면과의 반응에서 생성된 흡착종은 CO, $NH_{3}$, $H_{2}O$ 및 $NO_{x}$ 등이었다. $NO_{x}$의 생성량은 감지특성에 큰 영향을 나타냄을 알 수 있다. 170 ppm의 $CH_{3}CN$에 대한 $SnO_{2}$의 감도와 동작온도는 각각 70% 정도와 $300^{\circ}C$이었다. 0.2wt% Pd 첨가된 $SnO_{2}/Al_{2}O_{3}/Pd$ 감지소자는 $CH_{3}CN$에 대해 높은 감도를 나타내었으며, 응답시간은 약 10초이었다.