• 한국자기공명학회논문지
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• 제16권2호
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• pp.111-121
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• 2012

The spin-lattice relaxation times, $T_1$, and spin-spin relaxation times, $T_2$, of the $^{27}Al$ and $^{87}Rb$ nuclei in $RbAl(CrO_4)_2{\cdot}2H_2O$ crystals were investigated. The presence of only one resonance line for the $^{27}Al$ nuclei indicates that the results in a dynamical averaging of the crystal electric field that produces a cubic symmetry field. The changes in the temperature dependence of $T_1$ are related to variations in the symmetry of the octahedra of water molecules surrounding $Al^+$ and $Rb^+$. The $T_1$ values for the $^{27}Al$ and $^{87}Rb$ nuclei are different due to differences in the local environments of these ions. We also compared these $^{27}Al$ and $^{87}Rb$ NMR results with those obtained for $RbAl(CrO_4)_2{\cdot}2H_2O$ crystals. The relaxation mechanisms of $RbAl(XO_4)_2{\cdot}nH_2O$ (X=Cr and S) crystals are characterized by completely different NMR behaviors.

• 한국결정성장학회지
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• 제12권3호
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• pp.157-160
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• 2002

The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

• 한국재료학회지
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• 제27권6호
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• pp.301-306
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• 2017

The discovery of new luminescent materials for use in light-emitting diodes(LEDs) has been of great interest, since LED-based solid state lighting applications are attracting a lot of attention in the energy saving and environmental fields. Recent research trends have centered on the discovery of new luminescent materials rather than on fine changes in well-known luminescent materials. In a sense, the novelty of our study beyond simple modification or improvement of existing phosphors. A good strategy for the discovery of new fluorescent materials is to introduce activators that are appropriate for conventional inorganic compounds, that have well-defined structures in the crystal structure database, but have not been considered as phosphor hosts. Another strategy is to discover new host compounds with structures that cannot be found in any existing databases. We have pursued these two strategies at the same time using composite search technology with particle swarm optimization(PSO). In this study, using PSO, we have tracked down a search space composed of Sr-Al-Si-O-N and have discovered a new phosphor structure with yellow luminescence; this material is a potential candidate for UV-LED applications.

• 센서학회지
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• 제23권3호
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• Journal of the Optical Society of Korea
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• 제12권1호
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• pp.42-48
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• 2008

The relative intensity noise (RIN) characteristics in 405 nm blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the optical gain properties of the MQW active region using the self-consistent numerical method developed for calculating the multiband Hamiltonian in the strained wurtzite crystal. These methods have been applied to laser diodes for various conditions including the external feedback and the high frequency current injection.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.

• 한국결정성장학회지
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• 제4권1호
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• pp.11-20
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• 1994

분자선에피택시(molecular beam epitaxy)법을 이용하여 GaAs 및 ALGaAs layer를 undoped 반절연(100) GaAs 기판위에 성장하였고, 최적의 성장온도와 성장된 시료에 대한 전기적 및 광학적 특성을 조사 하였다. Undoped GaAs층의 성장에 있어서는 측정결과로 부터 As/Ga의유속비가 약 20, 성장온도가 $570^{\circ}C$일때 12K에서의 Photoluminescence 반폭치(FWHM)가 1.14meV인 결정성이 좋은 시료가 얻어졌으며, p형으로서 carrier 농도가 $1.5{\times}10^{14}cm^{-3}$ 미만이고, Hall 이동도가 300K에서 $579cm^2/V-s$인 양질의 에피층이 얻어졌다. 또한 이들 시료에서는 ODLTS, DLTS측정으로 부터 2개의 hole형 깊은 주위만이 관측되었다. Undoped AlGaAs층의 성장에 있어서는 As/(Ga+Al)의 유속비가 20이고 $60^{\circ}C$의 성장온도에서 표면 morphology와 결정성이 좋은 시료를 성장할 수 있었으며, 0.17~0.85eV에서 8개의 깊은 준위가 관측되엇다. Si이 도핑된 AlGaAs 층의 경우, PL 스펙트럼으로 부터 Si의 도핑효과를 관측할 수 있었으며, Hall 측정으로부터 300K에서 $1.5{\times}10^{16}cm^{-3}$일 때 Hall 이동도가 $2547cm^2/V-s$인 시료를 얻을 수 있었다.

• 한국결정성장학회지
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• 제22권5호
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• pp.233-240
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• 2012

백색 발광다이오드(white light-emitting diodes)를 이용한 광소자는 소비전력이 상대적으로 작고, 안정적이며, 수은과 같은 유해 중금속을 포함하지 않기 때문에, 에너지 절약 및 친환경 산업측면에서 유망한 산업으로 급속히 발전하고 있다. 국내의 경우 LED 조명의 효율, 신뢰성, 연색성을 향상시키는데 필수 소재인 형광체의 기술 확보에 대한 관심이 높아지고 있다. 이러한 관점에서 기존의 YAG, TAG, silicate 계열 산화물 형광체 뿐만 아니라 고온특성이 우수한 산/질화물계 형광체 개발에 대한 관심이 높아지고 있다. 특히 산/질화물계 형광체 조성에서 $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON(M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$과 같은 재료는 440~460 nm 영역에서의 넓은 여기파장과 우수한 발광효율로 청색 LED 칩을 이용한 백색 LED에 넓게 사용되고 있다. 이 논문에서는 이러한 산/질화물계 형광체 조성의 결정학적, 광학적 특성 및 응용에 대해서 정리하였다. 또한 최근에 주목받고 있는 양자점(quantum dots) 형광체를 응용한 white LEDs의 개발동향에 대해서도 알아보도록 한다.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Bulletin of the Korean Chemical Society
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• 제16권10호
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• pp.923-929
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• 1995

Four crystal structures of M3-A (M3Na9-xHx-A, M=Rb or K and x=1 or 0), Rb3Na8H-A(a=12.228(1) Å and R1=0.046), Rb3Na9-A (a=12.258(3) Å and R1=0.058), K3Na8H-A (a=12.257(3) Å and R1=0.048) and K3Na9-A (a=12.257(3) Å and R1=0.052), have been determined by single crystal x-ray diffraction technique in the cubic space group Pm3^m at 21 ℃. In all structures, each unit cell contained three M+ ions all located at one crystallographically distinct position on 8-rings. Rb+ ions are 3.12 and 3.21 Å away respectively from O(1) and O(2) oxygens, about 0.40 Å away from the centers of the 8-rings, and K+ ions are 2.87 and 2.81 Å apart from the corresponding oxygens. These distances are the shortest ones among those previously found for the corresoponding ones. Eight 6-rings per unit cell are occupied by eight Na+ ions, each with a distance of 2.31 Å to three O(3) oxygens. The twelfth cation per unit cell is found as Na+ opposite 4-ring in the large cavities of M3Na9-A and assumed to be H+ for M3Na8H-A. With these noble non-framework cationic arrangements, larger M+ ions preferably on all larger 8-rings and the compact Na+ ions on all 6-rings, the bond angles in the 8-rings of M3-A, 145.1 and 161.0 respectively for (Si,Al)-O(1)-(Si,Al) and (Si,Al)-O(2)-(Si,Al), turned out to be remarkably stable and smaller, by more than 12 to 17°, than the corresponding angles found in the crystal structures of zeolites A with high concentration of M+ ions. It is to achieve these remarkably relaxed 8-rings, the main windows for the passage of gas molecules, with simultaneously maximized cavity volumes that M3-A have been selected as one of the efficient zeolite A systems for gas encapsulation.