• 한국세라믹학회지
• /
• 제51권4호
• /
• pp.344-349
• /
• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• 한국전기전자재료학회논문지
• /
• 제28권2호
• /
• pp.104-108
• /
• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.367-367
• /
• 2008

Aluminum nitride (AlN) thin films have been deposited on Si substrate by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different $N_2$ concentration. It was found that $N_2$ concentration was varied in the range up to 20-100%, highly c-axis oriented film can be obtained at 50% $N_2$ with full width at half maximum (FWHM) $4.5^{\circ}$. Decrease in surface roughness from 7.5 nm to 4.6 nm found to be associated with decrease in grain size, with $N_2$ concentration; however, the AlN film fabricated at 20% $N_2$ exhibited a granular type of structure with non-uniform grains. The absorption peak was observed around 675 $cm^{-1}$ in fourier transform infrared spectroscopy (FTIR). It is concluded that the AlN film deposited at $N_2$ concentration of 50% exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• 한국전기전자재료학회논문지
• /
• 제29권10호
• /
• pp.665-670
• /
• 2016

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권7호
• /
• pp.288-292
• /
• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• 전자공학회논문지A
• /
• 제33A권10호
• /
• pp.98-106
• /
• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• 한국결정성장학회지
• /
• 제30권3호
• /
• pp.83-90
• /
• 2020

열전도성이 우수한 AlN 기판에 형성되는 Ag계 후막도체의 접착강도에 미치는 기판 표면조도 및 소결 온도의 영향을 연구하였다. 표면조도(R_a)가 0.5인 AlN 기판을 사용하여 제조한 후막도체의 접착강도가 이보다 표면조도가 크거나 또는 작은 기판을 사용하여 제조한 후막도체의 경우보다 높게 나타났다. 표면조도가 0.5보다 작은 기판의 경우 Ag 후막도체와 기판 사이의 접촉면적이 표면조도가 0.5인 기판보다 상대적으로 작아 접착강도가 작게 나타났다. 한편, 표면조도가 0.5보다 큰 기판을 사용한 경우에는 도체막이 기판에 완전히 접착되지 못하는 현상이 나타났고, 이로 인해서 접착강도가 적게 나타남을 알 수 있었다. 또한, 850℃에서 소결하여 얻어진 Ag계 후막도체 막의 표면 평활도가 다른 소결 온도에서 소결하여 얻어진 도체막의 평활도에 비해 가장 우수하였고, 이로 인해 도체막의 접착강도가 가장 높게 나타남을 알 수 있었다.

• 열처리공학회지
• /
• 제30권4호
• /
• pp.164-168
• /
• 2017

Intense electron beam was irradiated on the CrAlN thin films deposited in SKD61 under different incident energies and then the effect of electron beam irradiation on the enhancement of surface hardness and wear resistance was investigated. Surface hardness and wear resistance of the CrAlN films is increased proportionally with the electron beam energy. While the surface hardness of as deposited CrAlN film is Hv ($0.1g{\cdot}f$) 450, the hardness oflectron irradiated (600 eV) film is Hv ($0.1g{\cdot}f$) 2050. The width of wear track of the untreated SKD61 is $X\_{\mu}m$, while the track-width of the electron irradiated CrAlN (600 eV) film is $787{\mu}m$, respectively. From the observed results, it is supposed that the optimal electron beam irradiation can be one of the useful surface treatment technologies for the enhancement of surface hardness and wear resistance of CrAlN/SKD61, simultaneously.

• 한국식품저장유통학회지
• /
• 제20권3호
• /
• pp.317-322
• /
• 2013

전처리 유무와 포장방법에 따른 건조복숭아를 가속실험($40^{\circ}C$, 50일)하여 품질변화를 조사한 결과 중량 및 pH의 변화는 vitamin C 처리가 무처리에 비해 낮았으며, 충진방법에 따라서는 전반적으로 vacuum 처리가 passive 및 $N_2$ 처리방법에 비해 낮았다. 가용성고형분 함량은 polyethylene film에서 높았고, vacuum 처리가 passive 및 $N_2$ 처리방법에 비하여 높은 함량을 나타내었다. 적정산도의 경우는 OPP/Al/PE film이 polyethylene film다 높은 반면 vitamin C 처리 시 포장 재질 간에 유의한 수준의 값을 나타내어 vitamin C 처리가 저장 중에 온도에 의한 산의 손실을 억제하는 것으로 관찰되었다. 충진 방법에 따라서는 전반적으로 vacuum 및 $N_2$ 처리방법이 passive에 비해 높은 적정산도 값을 나타내었고, 식미와 관계가 있는 당산비에서는 vacuum 처리방법이 높은 값을 나타내었다. 색도의 변화는 전반적으로 vitamin C 처리가 무처리에 비해 낮은 변화를 보였으며 L 값, delta E 값 및 갈변도의 결과 OPP/Al/PE film 포장방법 및 vacuum 처리에서 갈변현상이 억제되는 것으로 관찰되었다. 전처리 방법에 따른 폴리페놀 및 플라보노이드 함량은 vitamin C 처리가 무처리에 비해 높은 함량을 나타내었으며, 포장재질에 따라서는 polyethylene film에 비하여 OPP/Al/PE film이 유의적으로 높은 함량을 나타내었다. 이상의 결과 무처리군의 passive 포장법에서는 갈변 및 품질열화현상이 높은 것으로 관찰되었으나 vitamin C 처리군의 vacuum-OPP/Al/PE film 포장은 갈변화 및 품질손상이 적게 관찰되어 품질유지 및 유통기간 연장을 위한 적정포장 방법이 될 것으로 사료된다.

• 한국결정성장학회지
• /
• 제7권2호
• /
• pp.207-215
• /
• 1997

Ionized Cluster Beam Deposition(ICBD)방법을 이용하여 Si(100)기판과 TiN(60 nm)/Si(100)기판위에 Al 박막을 증착하였다. 증착된 Al 박막의 증착특성은 $\alpha$-step, four-point-probe, XRD, SEM, AES 측정장치를 가지고 조사해 보았다. 도가니 온도가 증가함에 따라 Al 박막의 증착속도는 증가하였고 비저항 값은 감소하였다. 도가니 온도가 $1800^{\circ}C$인 경우 가속전압이 증가함에 따라 연속적이며 평평한 박막이 형성되고 비저항이 감소되었다. 최소의 비저항 값은 Si 기판에서는 가속전압이 4 kV일 때 3.4 $\mu \Omega \textrm {cm}$, TiN 기판에서는 가속전압이 2kV일 때 3.6 $\mu \Omega \textrm {cm}$. AES 분석결과 형성된 박막내에서는 불순물이 존재하지 않는 것을 알 수 있었다. 따라서 Al 박막의 비저항은 박막충의 미세구조에 의해 영향을 받는다.