• Journal of the Korean Vacuum Society
• /
• v.22 no.3
• /
• pp.162-167
• /
• 2013

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.6
• /
• pp.282-288
• /
• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Journal of the Optical Society of Korea
• /
• v.11 no.3
• /
• pp.133-137
• /
• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.655-660
• /
• 2001

Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

• Korean Journal of Environmental Agriculture
• /
• v.30 no.3
• /
• pp.229-233
• /
• 2011

BACKGROUND: Soil acidification, which is known to be one of the reasons of forest decline, is associated with decreases in exchangeable Ca and increases in Al concentration, leading to low Ca/Al ratio in soil solution. As tree rings are datable archives of environmental changes, Ca/Al ratios of annual growth ring may show decreasing pattern in accordance with the progress of soil acidification. This study was conducted to investigate Ca/Al pattern of Pinus densiflora tree ring in an attempt to test its usefulness as an indicator of historical soil acidification. METHODS AND RESULTS: Three P. densiflora tree disks were collected from P. densiflora forests in Jeonnam province, and soil samples (0-10, 10-20, and 20-30 cm in depth) were also collected from the tree locations. Soils were analyzed for pH and exchangeable Ca and Al concentrations, and Ca/Al was calculated. Annual growth rings formed between 1969 and 2007 were separated and analyzed for Ca/Al. Soil Ca/Al was positively (P<0.01) correlated with soil pH, suggesting that soil acidification decreased Ca while increasing Al availability, lowering Ca/Al in soil solution. The Ca/Al of tree rings also showed a decreasing pattern from 18.2 to 5.5 during the period, and this seemed to reflect historical acidification of the soils. CONCLUSION(s): The relationship between soil pH and Ca/Al and the decreasing pattern of Ca/Al of tree ring suggest that Ca/Al of tree ring needs to be considered as a proxy of the progress of soil acidification in P. densiflora forest in southern Korea.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.251-256
• /
• 2003

Indium aluminum arsenide(InAlAs) was grown by molecular beam epitaxy on (001) indium phosphide (InP) substrate and the effects of growth temperature on the properties of epitaxial layers were studied. In the temperature range of 370-$400 ^{\circ}C$, we observed that the surface morphology, optical quality and structural quality of InAlAs epilayers were improved as growth temperature increased. However, the InAlAs epilavers grown at $430 ^{\circ}C$ have the bad surface morphology and show the same trends as structural and epical quality. As a result of these measurements, it is suggested that the InAlAs epilayers of very good properties can be grown at $400 ^{\circ}C$.

• Journal of Korea Foundry Society
• /
• v.20 no.2
• /
• pp.89-96
• /
• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• Journal of Sensor Science and Technology
• /
• v.8 no.5
• /
• pp.421-426
• /
• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Tribology and Lubricants
• /
• v.20 no.2
• /
• pp.97-101
• /
• 2004

This paper reports the studies on the wear-corrosion behavior of Al-Mg alloy in various pH environments. In various pH of sea water, corrosion and wear-corrosion loss of Al-Mg alloy were investigated. Also, the polarization test of Al-Mg alloy using potentiostat/galvanostat was carried out. And the rubbed surface of Al-Mg alloy using scanning electron micrographs after wear-corrosion test was examined in various pH values of sea water. The main results are as following : The polarization resistance of Al-Mg alloy in pH 4 solution is higer than that in pH 6.7 solution, and the corrosion current density in pH 4 is controlled than in pH 6.7 solution. The wear-corrosion loss of Al-Mg alloy with lowering pH becomes sensitive. As the oxide product of Al-Mg alloy appears granular structure and exholiation phenomenon, wear-corrosion loss of Al-Mg alloy increases.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.134-140
• /
• 2010

We have investigated the contactless electroreflectance (CER) properties of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$/GaAs double heterostructures grown by metal-organic chemical vapour deposition (MOCVD). The CER measurements on the sample were studied as a function of temperature, modulation voltage ($V_{ac}$), and dc bias voltage ($V_{bias}$). Five signals observed at room temperature are related to the GaAs, $In_{0.5}Ga_{0.5}P$, $In_{0.5}(Ga_{0.73}Al_{0.27})_{0.5}P$, $In_{0.5}(Ga_{0.5}Al_{0.5})_{0.5}P$, and $In_{0.5}(Ga_{0.2}Al_{0.8})_{0.5}P$ transitions, respectively. From the temperature dependence of CER spectrum, the Varshni coefficients and broadening parameters were determined and discussed. In addition, we found that the behavior of the CER amplitude for the reverse bias is larger than that of the forward.