• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.214-217
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• 2017

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.308-308
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• 2011

6.48 ${\AA}$의 격자 상수를 갖는 InSb 물질은 0.17 eV의 낮은 에너지 밴드갭과 78,000 cm2/Vs의 전자 이동도를 갖는 물질로서 고속의 자성 센서소자, 장파장의 광 검출기 그리고 고속 전자소자 등의 분야에서 많은 주목을 받고 있다. 그러나, 전기적 특성이 우수한 InSb 물질을 소자로 구현하는데 있어서 큰 어려움이 있다. InSb와 격자 크기가 잘 맞으면서 절연이 우수한 기판의 부재가 가장 큰 문제가 되는 부분이다. 즉, 격자 부정합을 최소화하며 동시에 절연기판을 사용함으로써 소자의 특성을 잘 살려야 하는 것이다. 이러한 이유로 인하여 InSb 기반의 소자가 널리 사용되지 못하고 있는 것이다. 현재 범용으로 사용하고 있는 기판은 격자 부정합이 14%인 GaAs, 11%의 InP 그리고 18%의 Si 등이 있다. 이번 발표에서는 GaAs 기판 위에 격자 부정합을 최소화하여 InSb 박막을 최적화 시켜 성장하는 방법에 대해서 소개하고자 한다. InSb 박막 성장하는데 있어 논문으로 보고된 여러 가지 방법들이 있다. 기판과의 격자 부정합을 줄이기 위하여 저온-고온 (L-T)의 의한 메타몰픽(metamorphic) buffer 층을 성장 후 InSb 박막을 성장하는 방법[1] 그리고 단계별 buffer를 성장하는 방법[2] 등을 통해서 많은 진보가 있었다. 하지만, 우리는 GaAs 기판 위에 AlSb 박막을 성장 하면서 동시에 In과 Al의 양을 서서히 변화시키는 grading 기술을 사용하였다. 즉, 물질 각각의 격자상수를 고려하여 GaAs (기판)-AlSb-InAlSb-InSb로 변화를 주어 격자 부정합이 최소가 되도록 하여 만들어진 buffer 위에 InSb 층이 만들어 지도록 하여 GaAs 기판 위에 InSb 박막을 성장 할 수 있었다. grading 기술을 이용하여 만들어진 buffer 위에 성장된 0.3 um의 InSb 박막 층은 상온에서 전자 이동도가 약 38,000 cm2/Vs에 이르는 것을 확인하였다. InSb 박막의 두께가 약 1 um 되어야 30,000 cm2/Vs 이상의 전자 이동도를 얻을 수 있다고 많은 논문을 통해서 보고 되고 있으나 우리는 단지 0.3 um의 InSb 박막두께에서 이와 같은 전기적인 특성을 확인하였기에 이상과 같이 보고 하고자 한다.

• Journal of Aerospace System Engineering
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• v.7 no.4
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• pp.36-41
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• 2013

In order to improve incombustibility of EPDM(Ethylene propylene diene monomer)-based rubber, inorganic materials as $Al(OH)_3$ and $Sb_2O_3$ were added. The mechanical and thermal properties have been measured for vulcanized rubber loaded with different concentrations of $Al(OH)_3$ and $Sb_2O_3$. As inorganic material contents increases from 5phr to 30phr, the specific gravity and hardness increase while elongation at break decreases. This study performed incombustibility test and thermal analysis through TGA(Thermogravimetric Analyzer). As a results, incombustible and thermal properties of EPDM-based rubber were improved as $Al(OH)_3$ and $Sb_2O_3$ contents increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.223-223
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• 2010

InSb 물질은 다른 III-V족 물질들과 비교해서 bandgap이 낮고 전자 이동도가 높아, 소자 구현 시 낮은 전압으로도 고속 동작 특성을 제어할 수 있다는 장점이 있다. 그러나 Si, GaAs 또는 InP 등 쉽게 구할 수 있는 기판과 격자 부정합이 커서 상기 기판에 성장시 많은 defect가 존재하는 단점이 있다. 그러므로 이를 상기 기판에 성장하는데 meta-morphic이라 불리는 성장 기술이 요구되는 어려움이 있다. 본 발표에서 Semi-insulating GaAs 기판위에 고품질의 InSb 박막을 성장하기 위해 grading buffer technique을 도입하며 이에 대한 여러 가지 비교실험과 함께 최적의 성장 방법과 기술에 대해 논의 한다. GaAs와 InSb 물질사이의 bandgap과 격자 부정합을 고려하여 AlSb 물질을 먼저 성장하면서 동시에 InxAl1-xSb로 변화를 주어 InSb 박막이 성장되도록 하였다. ($x=0{\rightarrow}1$). 성장 온도 변화 및 In과 Al의 조성비에 변화를 주어 grading 기법으로 성장하였고 상기 grading buffer위에 InSb 박막을 0.65um 성장하였다. $10um{\times}10um$ AFM 측정결과 2.2nm 정도의 표면 거칠기를 가지며 상온에서의 전자 이동도는 약 46, 300 cm2/Vs 이고 sheet electron density는 9.47(e11) /cm2의 결과를 확인하였다. 실험결과 InSb 박막을 올리는데 있어 가장 고려할 사항인 GaAs 기판과 InSb 박막 사이에 존재하는 격자 부정합을 어떻게 해결하는가에 대해서, 기존의 여러가지 방법과 비교해서 grading buffer 기술이 유효하다는 것을 증명하였다.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.449-452
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• 2009

In order to improve incombustibility of EPDM(Ethylene propylene diene monomer)-based rubber, inorganic materials as $Al(OH)_3$ and $Sb_2O_3$ were added. The mechanical and thermal properties have been measured for vulcanized rubber loaded with different concentrations of $Al(OH)_3$ and $Sb_2O_3$. As inorganic material contents increases from 5phr to 30phr, the specific gravity and hardness increase while elongation at break decreases. This study performed incombustibility test and thermal analysis through TGA(Thermogravimetric Analyzer). As a results, incombustible and thermal properties of EPDM-based rubber were improved as $Al(OH)_3$ and $Sb_2O_3$ contents increase.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.376-380
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• 2008

The optical properties of multi layered thin films with $Sb_2O_3/Na_3AlF_6/Sb_2O_3/Cr$ were simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. $Sb_2O_3$ and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cr was chosen as mid reflective material. Optical properties including color effect were systematically studied in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$ of optical thickness showed mixed color range between purple and red range, yellowish green and bluish green, purple and mixed color range of green and purple respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.131-135
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• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.