• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.196-205
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• 2019

Ni-rich layered oxides $Li(Ni_xCo_yMn_z)O_2$ (x + y + z = 1) have been extensively studied in recent times owing to their high capacity and low cost and can possibly replace $LiCoO_2$ in the near future. However, these layered oxides suffer from problems related to the capacity fading, thermal stability, and safety at high voltages. In this study, we use surface coating as a strategy to improve the thermal stability at higher voltages. The uniform and conformal $Al_2O_3$ coating on prefabricated electrodes using atomic layer deposition significantly prevented surface degradation over prolonged cycling. Initial capacity of 190, 199, 188 and $166mAh\;g^{-1}$ is obtained for pristine, 2, 5 and 10 cycles of ALD coated samples at 0.2C and maintains 145, 158, 151 and $130mAh\;g^{-1}$ for high current rate of 2C in room temperature. The two-cycle $Al_2O_3$ modified cathode retained 75% of its capacity after 500 cycles at 5C with 0.05% capacity decay per cycle, compared with 46.5% retention for a pristine electrode, at an elevated temperature. Despite the insulating nature of the $Al_2O_3$ coating, a thin layer is sufficient to improve the capacity retention at a high temperature. The $Al_2O_3$ coating can prevent the detrimental surface reactions at a high temperature. Thus, the morphology of the active material is well-maintained even after extensive cycling, whereas the bare electrode undergoes severe degradation.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.327-332
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• 2009

In the devices structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) /tris (8-hydroxyquinoline)aluminum$(Alq_3)$electron-transport-layer(ETL)(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP))/Al, we have studied the efficiency improvement of organic light-emitting diodes depending on the thickness variation of BCP using electron transport layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm under a base pressure of $5{\times}10^{-6}$ Torr using at thermal evaporation, respectively. The TPD and $Alq_3$ layer were evaporated to be deposition rate of $2.5{\AA}/s$. And the BCP was evaporated to be a4 a deposition of $1.0{\AA}/s$. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when thickness of BCP is 5 nm. Also, operating voltage is lowest. Compared to the ones from the devices without BCP layer, the luminous efficiency and the external quantum efficiency were improved by a factor of four hundred ninty and five hundred, respectively. And operating voltage is reduced to about 2 V.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.652-657
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• 2015

We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with $H_2O$ and $O_3$ as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using $H_2O$ was lower than the films grown using $H_2O$ and $O_3$, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• 대한전자공학회논문지SD
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• 제44권5호
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• pp.8-14
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• 2007

본 논문에서는 MOS 소자의 게이트 유전체로 사용될 고유전 박막으로 $HfO_2$/Hf 박막을 제조하여 그 전기적 특성을 관찰하였다. $HfO_2$박막은 TEMAH와 $O_3$ 전구체를 사용한 ALD 방법으로 p-type (100) 실리콘 웨이퍼 위에 증착하였다. $HfO_2$막을 증착시키기 전에 중간층으로써 Hf 금속 층을 증착하였다. Round-type의 MOS 커패시터 제작을 위해, 상부 전극은 Al 또는 Pt을 이용하여 약 2000 ${\AA}$ 두께의 전극을 형성하였다. $HfO_2$ 박막은 화학정량적 특성을 보였으며, $HfO_2$/Si 계면에서 Si-O 결합 대신 Hf-Si 결합과 Hf-Si-O 결합이 관찰되었다. $HfO_2$와 Si 사이의 Hf 중간층은 $SiO_x$의 성장이 억제되었고, $HfSi_xO_y$으로 변형되었다. 이러한 결과로 $HfO_2$/Hf/Si 구조에서 Hf 중간층이 있음으로 게이트 유전체의 고유전율이 유지되면서 계면 특성이 개선됨을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.685-690
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• 2014

Microholographic gratings were prepared on an aluminum oxide ($Al_2O_3$) surface using a 140-fs pulse at a center wavelength of 800 nm. The $Al_2O_3$ was deposited on a silicon wafer and on indium tin oxide glass to a thickness of approximately 25 nm using an atomic layer deposition process. The silicon wafer substrate exhibited reflection-type gratings that were measured as a function of the incidence angle. The diffraction efficiency of the fabricated gratings was measured, with a maximum diffraction efficiency of 45% at an incidence angle of approximately $30^{\circ}$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• 전기학회논문지
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• 제63권10호
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• pp.1412-1416
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• 2014

We report thin-film organic moisture barriers based on polystyrene(PS) laminates deposition by PECVD for an encapsulation of OLEDs. The organic polystyrene thin-film has the benzene ring structure and high hydrophobic characteristics and it was polymerized by PECVD in dry process. Life time properties of Ca test were obtained 32 minutes at the RF 100W process conditions. From the AFM test, the roughness of multi-layer thin-film was more excellent rather than that of a single-layer thin-film. In addition, 5 layers of the multi-layer film properties were obtained 45 minutes. So that the optical and electrical properties were not affected with these plasma polymerized organic thin-film encapsulation. For life time improvement, the inorganic $Al_2O_3$ thin-film were deposited 5nm using ALD atomic layer deposition. The WVTR(Water Vaper Transmission Rate) value of hybrid thin-film encapsulation in the optimum process conditions was resulted by less than $10-3g/m^2/day$. From the results of experiment, plasma polymerized hybrid encapsulation was suggested as the flexible display applications.