• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.385-386
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• 2007

We prepared the Al doped ZnO coating Ag multilayer thin films on glass without substrate heating using FTS system. The structure of multilayer thin films has Al doped ZnO/Ag/Al doped ZnO(AZO/Ag/AZO). The thickness of top and bottom AZO thin films were fixed to 50 nm, respectively and controlled the thickness of Ag thin films with deposition time. As-doped multilayer thin films were prepared at 1mTorr and input power (DC) of 100W at room temperature. To investigate the film properties, we employed four-point probe, UVNIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• 센서학회지
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• 제8권2호
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• pp.189-194
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• 1999

고주파 마그네트론 스퍼터링법으로 증착된 순수한 ZnO 박막 및 Al이 포핑된 ZnO(AZO) 박막의 열처리온도 및 열처리분위기에 따른 전기적 및 광학적 특성을 4점 측정법 및 Hall 효과 측정법을 통한 비저항의 측정과 광투과도의 측정을 통하여 조사하였다. 대기중에서 열처리된 ZnO 박막 및 ZnO:Al 박막은 각각 $200^{\circ}C$ 및 $300^{\circ}C$에서 비저항이 현저하게 증가하였으며 수소 플라즈마 분위기에서 열처리된 ZnO 박막은 $500^{\circ}C$의 열처리온도에서 약 1승 정도 비저항이 증가하였으나 ZnO:Al 박막은 열처리온도에 무관하게 비저항이 거의 일정하였다. 550 nm 에서 측정된 광투과도는 90% 정도로 시편의 불순물도핑, 열처리온도 및 열처리분위기에 무관하게 일정한 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• 전기학회논문지
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• 제66권8호
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• pp.1236-1241
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• 2017

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.58-61
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• 2005

In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from $4.80{\times}10^{-3}$ to $8.30{\times}10^{-4}{\Omega}cm$ due to increased carrier concentration. Such improvements in electrical properties are attributed to the passivation of the grain boundary surfaces. The optical properties of the films, which changed in accordance with the Burstein-Moss effect, were consistent with the observed changes in electrical properties.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

• 전기학회논문지
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• 제56권10호
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• 한국결정성장학회지
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• 제6권4호
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• pp.480-492
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• 1996

Al이 2 wt% 포함되어 있는 Zn 금속 target을 사용하여 반응성 직류 magnetron sputtering법으로 AZO(Aluminum doped Zinc Oxide) 투명전도막을 제막하였다. 반응성 가스인 산소의 분압과 유량을 조절하여 투과율과 전도도가 모두 우수한 전이영역을 발견하였고 전이영역을 안정적으로 유지하기 위한 증착조건을 찾아냈다. ZnO:Al막의 XRD분석결과 산화막이나 전이영역에서 증착된 막들은 ZnO결정의 (002)면의 peak가 유일하게 관찰되었다.