• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.130.2-130.2
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• 2011

본 연구에서는 RF magnetron sputtering을 이용하여 실리콘 박막 태양전지용 ZnO:Al 전면전극을 제작하고 다양한 식각조건에 따른 ZnO:Al 박막의 표면형상 변화와 함께 전기적 및 광학적 특성 변화를 조사하였다. pin 구조를 갖는 실리콘 박막 태양전지의 효율 향상을 위해서는 입사광의 산란효과에 따른 광포획 증가가 필수적이며 이를 위하여 ZnO:Al 전면전극의 표면텍스처링 형성이 필요하다. 식각용액으로는 HCl과 HF 등을 사용하였으며 식각용액 농도 및 식각시간을 변화시켰다. 식각 후의 ZnO:Al 박막의 표면형상은 SEM(Scanning Electron Microscope)과 AFM(Atomic Force Microscope)을 이용하여 분석을 하였고, UV-visible-nIR spectrometer를 이용하여 총 투과도 및 산란 투과도를 측정하였다. 이 외에도 four-point probe 및 Hall measurement를 이용하여 전기적 특성 변화를 조사하였다. 다양한 식각조건에 따라 제조된 ZnO:Al 박막 위에 실리콘 박막 태양전지를 제작하여 전면전극의 표면형상에 따른 태양전지 성능변화를 비교 분석하였다.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.598-601
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• 2015

Using reverse micelle processing, $ZnAl_2O_4$ nanopowders were synthesized from a mixed precursor(consisting of $Zn(NO_3)_2$ and $Al(NO_3)_3$). The $ZnAl_2O_4$ was prepared by mixing the aqueous solution at a molar ratio of Zn : Al = 1 : 2. The average size and distribution of the synthesized powders with heat treatment at $600^{\circ}C$ for 2 h were in the range of 10-20 nm and narrow, respectively. The average size of the synthesized powders increased with increasing water to surfactant molar ratio. The XRD diffraction patterns show that the phase of $ZnAl_2O_4$ was spinel(JCPDS No. 05-0669). The synthesized and calcined powders were characterized using a thermogravimetric - differential scanning calorimeter(TG-DSC), X-ray diffraction analysis (XRD), and high resolution transmission electron microscopy(HRTEM). The effects of the synthesis parameter, such as the molar ratio of water to surfactant, are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.711-715
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• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.433-433
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• 2007

In this paper, we investigated the feasibility of applying ZnO:Al films to display devices as transparent electrodes, and reported the electro-optical (EO) characteristics of VA cells using ZnO:Al electrodes and compared them with those of VA cells using ITO electrodes. The experiment results show that a uniform vertical LC alignment and a large pretilt angle were achieved. Also, the good voltage-transmittance curve, response time, and capacitance-voltage characteristics were observed for the rubbing aligned VA-LCD using ZnO:Al electrodes m comparison with ITO electrodes. In other words, the vertical alignment mode based on the ZnO:Al electrodes showed appropriate electro-optical characteristics and high transparency in comparison with that based on the ITO electrodes. These results indicated that the transparent ZnO:Al electrodes of the liquid crystal displays could substitute the ITO electrodes.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.158-161
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• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2023.05a
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• pp.59-60
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• 2023

The corrosion of steel rebar embedded in the coastal areas is corroding once the chloride ions ingress through the pores of the concrete. Therefore, in the present study, a 100 ㎛ thick Al and Zn coating was deposited by an arc thermal spray process onto the steel. The corrosion studies of these deposited coatings were assessed in 3.5 wt.% NaCl contaminated concrete pore (CP) solution with immersion periods. The results show that the Al coating is more corrosion resistance compared to the Zn coating attributed to the formation of gibbsite (γ-Al(OH)₃) whereas Zn coating exhibits Zn(OH)₂ onto the coating surface as passive layer. The Zn(OH)₂ is readily soluble in an alkaline solution. Alternatively, γ-Al(OH)₃ on the Al coating surface is less solubility in the alkaline pH, which further provides barrier protection against corrosion.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.6
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• pp.389-395
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• 2023

Damping capacities of Mg-2.5%Al and Mg-2.5%Zn (in atomic) solid solutions were comparatively investigated in order to clarify the influence of solutionized Al and Zn elements on the damping characteristics of Mg. In this study, solid solutions with similar grain size were obtained by solution treatment at 678 K for different times (24 h for Mg-2.5%Al and 36 h for Mg-2.5%Zn), followed by water quenching at RT. The Mg-2.5%Al and Mg-2.5%Zn solid solutions showed similar damping capacities in the strain-amplitude independent region of 1 × 10^-6 ~ 1 × 10^-5 and in the strain-amplitude dependent region below 6 × 10^-4, over which the Mg-2.5%Zn solid solution possessed better damping capacity than the Mg-2.5%Al solid solution. The damping tendencies depending on strain-amplitude for the two solid solutions were analyzed and discussed in terms of similar length between weak pinning points (solutes) and different solute/dislocation interaction forces in Granato-Lücke model.