• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.281-281
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• 2011

산업 환경에서 친환경 및 에너지효율성을 중요한 조건이 되면서 고효율성 및 다기능을 가진 재료에 대한 연구가 활발히 진행 되고 있다. 특히 Al-Ti-N 코팅은 이미 경도 측면에서 우수 하여 고속 공구 부품에 널리 사용되고 있고 최근에 Al-TiN에서 Si 첨가는 40GPa이상의 고경도와 1000도 이상의 산화온도를 지닌 나노 혼합물 코팅을 형성 시키는 것으로 알려져 있다. 본 연구에서 Al-Ti에 Si, Cu, Cr 을 첨가하였을 때 코팅을 형성하였을 때 바뀌는 물성 변화을 확인하였다. 이러한 연구를 위해 Al-Ti 합금 조성 중 가장 우수한 것으로 알려진 60:40으로 타겟을 만들어 스퍼터 장비를 이용해 코팅을 형성하여 기초 실험을 진행하였다. 그 근거로 하여 3원계인 Si, Cu, Cr 을 첨가하여 각각의 단일 타겟으로 만들고 코팅을 형성하였다. 타겟과 코팅의 성분이 동일한지 확인하기 위해 EPMA분석을 하였고 그 결과 오차 범위 내에 동일한 것으로 확인하였다. 또 내산화성 테스트를 위해 400도에서 1000도로 가열된 대기 중에 코팅 층을 1시간씩 노출시키는 공정을 통해 확인하였고 내식성 테스트는 SUS 304계열 위에 코팅을 하여 Potentiodynamic polarization scan 장비로 비교해 보았다. 표면경도는 3원계 코팅인 경우 질소비율이 증가할수록 30GPa ~ 35GPa까지 증가하였고 XRD 분석 결과와 비교 시 (111), (200) peak가 명확할수록 경도 값이 높은 것으로 확인하였다. 마모테스트 결과 3원계인 코팅 층이 dry상태에서 감소하는 경향을 보였다. 특히 0,26까지 감소한 Si 을 첨가한 코팅 층은 H/E지수도 좋아 마모트랙의 길이도 짧아 우수한 것으로 알 수 있었다. 이런 결과에서 보듯 3원소 이상 첨가 시 특성변화가 차이가 있다는 것을 알 수 있었다.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.897-905
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• 2012

Directional solidification experiments were carried out in a hypoeutectic Al-11.3Si-3.5Cu system to investigate the microstructural evolution with the solidification rate. At a fixed temperature gradient, a dendritic microstructure was observed at a constant speed of more than $25{\mu}ms^{-1}$, a cellular interface developed at $5{\mu}ms^{-1}$ and the growth rate of $0.5{\mu}ms^{-1}$ led to the stability of the planar interface. The results revealed that primary silicon phases formed among cells, even though the studied Al-Si alloy system formed the composition within a hypoeutectic silicon composition. This suggests that the liquid concentration among cells during solidification reached a higher concentration, i.e., the eutectic concentration. It is, however, interesting that primary silicon phases did not form during a dendritic growth of more than $25{\mu}ms^{-1}$. These experimental observations are explained using the theoretical models on the interface temperatures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.751-753
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm. and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Transactions of Materials Processing
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• v.14 no.6 s.78
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• pp.502-508
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• 2005

Hypereutectic Al-Si alloys have been regarded attractive for automotive and aerospace application, due to high specific strength, good wear resistance, high thermal stability, low thermal expansion coefficient and good creep resistance. Spray casting of hypereutectic Al-Si alloy has been reported to provide distinct advantages over ingot metallurgy (IM) or rapid solidification/powder metallurgy (RS/PM) process in terms of microstructure refinement. In this study, hypereutectic Al-25Si-2.0Cu-1.0Mg alloy was prepared by OSPREY spray casting process. The change of strain rate sensitivity and Creep transition were analyzed by using the load relaxation test and constant creep test. High temperature deformation behavior of the hypereutectic Al-Si alloy has been investigated by applying the internal variable theory proposed by Chang et al. Especially, the creep resistance of spray casted hypereutectic Al-Si alloy can be enhanced considerably by the accumulation of prestrain.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.19-23
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• 2012

Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.1
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• pp.21-30
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• 2017

The surface temperature of disc brakes varies during braking, which can affect the friction and wear behavior of braking systems. In order to develop an efficient braking system, the friction and wear behaviors of brake materials need to be clearly understood. In this work, the friction and wear behavior of the C/C-SiC-Cu composite and the Al/SiC composite, which are used in disc braking systems, were investigated. Both the surface temperature and contact pressure were studied. A pin-on-reciprocating tribotester was used for this purpose, in order to control temperature and load. Results showed that the friction varied significantly with temperature and sliding distance. It was found that a transfer layer of compacted wear debris formed on the wear track of the two materials. These layers caused the surface roughness of the wear track to increase. The outcome of this work is expected to serve as a basis for the development of braking systems under various operating conditions.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.1
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• pp.20-29
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• 1997

Pure copper is widely used for base material for electrical and electronic parts because of its good electrical conductivity. However, it has such a low strength that various alloying elements are added to copper to increase its strength. Nevertheless, alloying elements which exist as solid solution elements in copper matrix severely reduce the electrical conductivity. The reduction of electrical conductivity can be minimized and the strengthening can be maximized by TMT(Thermo-Mechanical Treatment) in copper alloys. In this research, the effects of TMT on mechanical and electrical properties of Cu-Ni-Al-Si-P, Cu-Ni-Al-Si-P-Zr and Cu-Ni-Si-P-Ti alloys aged at various temperatures were investigated. The Cu alloy with Ti showed the hardness of Hv 225, electrical conductivity of 59.8%IACS, tensile strength of 572MPa and elongation of 6.4%.

• Journal of Power System Engineering
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• v.20 no.3
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• pp.17-21
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• 2016

The corrosion behavior of aluminum alloys in the $H_2SO_4$ solution was investigated based on potentiodynamic techniques. Electrochemical properties, such as corrosion potential($E_c$), passive potential($E_p$), corrosion current density($I_c$), corrosion rate(mpy), of Al-Mg-Si, Al-Cu-Si and Al-Si alloys were characterized at room temperature. Passive aluminum oxide film, which including $Al_2(SO_4)_3$ and $3Al_2O_34SO_38H_2O$, were uniformly formed on the surface via the reaction of Al with $SO{_3}^{2-}$ or $SO{_4}^{2-}$ ions in the $H_2SO_4$ solution and the dependence of the corrosion behavior on the alloying element was discussed. The selective leaching of alloy element increased with increasing Cu content in the aluminum alloys.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.256-256
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• 2012

Cu가 기존 배선물질인 Al을 대체함에 따라 resistance-capacitance delay와 electromigration (EM) 등의 문제들이 어느 정도 해결되었다. 그러나 지속적인 배선 폭의 감소로 배선의 저항 증가, EM 현상 강화 그리고 stability 악화 등의 문제가 지속적으로 야기되고 있다. 이를 해결하기 위한 방법으로 Cu alloy seed layer를 이용한 barrier 자가형성 공정에 대한 연구를 진행하였다. 이 공정은 Cu 합금을 seed layer로 사용하여 도금을 한 후 열처리를 통해 $SiO_2$와의 계면에서 barrier를 자가 형성시키는 공정이다. 이 공정은 매우 균일하고 얇은 barrier를 형성할 수 있고 별도의 barrier와 glue layer를 형성하지 않아 seed layer를 위한 공간을 추가로 확보할 수 있는 장점을 가지고 있다. 또한, via bottom에 barrier가 형성되지 않아 배선 전체 저항을 급격히 낮출 수 있다. 합금 물질로는 초기 Al이나 Mg에 대한 연구가 진행되었으나, 낮은 oxide formation energy로 인해 SiO2에 과도한 손상을 주는 문제점이 제기되었다. 최근 Mn을 합금 물질로 사용한 안정적인 barrier 형성 공정이 보고 되고 있다. 하지만, barrier 형성을 하기 위해 300도 이상의 열처리 온도가 필요하고 열처리 시간 또한 긴 단점이 있다. 본 실험에서는 co-sputtering system을 사용하여 Cu-V 합금을 형성하였고, barrier를 자가 형성을 위해 300도에서 500도까지 열처리 온도를 변화시키며 1시간 동안 열처리를 실시하였다. Cu-V 공정 조건 확립을 위해 AFM, XRD, 4-point probe system을 이용하여 표면 거칠기, 결정성과 비저항을 평가하였다. Cu-V 박막 내 V의 함량은 V target의 plasma power density를 변화시켜 조절 하였으며 XPS를 통해 분석하였다. 열처리 후 시편의 단면을 TEM으로 분석하여 Cu-V 박막과 $SiO_2$ 사이에 interlayer가 형성된 것을 확인 하였으며 EDS를 이용한 element mapping을 통해 Cu-V 내 V의 거동과 interlayer의 성분을 확인하였다. PVD Cu-V 박막은 기판 온도에 큰 영향을 받았고, 200도 이상에서는 Cu의 높은 표면에너지에 의한 agglomeration 현상으로 거친 표면을 가지는 박막이 형성되었다. 7.61 at.%의 V함량을 가지는 Cu-V 박막을 300도에서 1시간 열처리 한 결과 4.5 nm의 V based oxide interlayer가 형성된 것을 확인하였다. 열처리에 의해 Cu-V 박막 내 V은 $SiO_2$와의 계면과 박막 표면으로 확산하며 oxide를 형성했으며 Cu-V 박막 내 V 함량은 줄어들었다. 300, 400, 500도에서 열처리 한 결과 동일 조성과 열처리 온도에서 Cu-Mn에 의해 형성된 interlayer의 두께 보다 두껍게 성장했다. 이는 V의 oxide formation energy가 Mn 보다 작으므로 SiO2와의 계면에서 산화막 형성이 쉽기 때문으로 판단된다. 또한, $V^{+5}$이온 반경이 $Mn^{+2}$이온 반경보다 작아 oxide 내부에서 확산이 용이하며 oxide 박막 내에 여기되는 전기장이 더 큰 산화수를 가지는 V의 경우 더 크기 때문으로 판단된다.

• Economic and Environmental Geology
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• v.32 no.3
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• pp.247-260
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• 1999

Geochermical characteristics of the fluvial sediments deprnding on particle size distribution size were investigated in the respect of majir, minor and rare eath element chemisitry. Ratios of $Al_{2}O_{3}/Na_{2}O$ and $K_{2}O/Na_{2}O$ of the sediments show the homogeneous valus, and partly positive correlation with $SiO_{2}/Al_{2}O_{3}$, respecively. Characteristics of minor element ratios (V/Ni, Cr/V, Ni/Co and Zr/Hf)are within the lower and narrow range. Thesesuggested that sediment sources may be acidic to intermediate granitic rock, and may be explained by simple weathering and sedimentation. With increasing SiO2 contents, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO and MgO decreased, but those of $K_{2}O$ and $Na_{2}O$ increased, Concentrations of Ba, Be, Cs, Cu, Li, Ni, Sr, V and Zr show comparatively normal negative and some positive trends. Compared with the mean composition of granite, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, MnO, CaO and MgO in the sediments of the study area were highly enriced. Among some minor and rare earth elements, concentrations of As, Cd, Cu, and V were enriched, but those of Be, Ce, Rb, Sc, Sr and Zn were depleted when compared with average composition of granite. By decreasing of particle size fractions, SiO2, Rb and Sr conterts decreased, but concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO, MgO, $TiO_{2}$, MgO, $P_{2}O_{5}$, Be, Cu, Hf, Pb, V and Zr increased. From the correlations between particle size fractions and element concenreations, some elements of $Fe_{2}O_{3}$, CaO, MgO, $P_{2}O_{5}$, Cu, Ni, Zn and Zr showed typical trends in the secondary contramination sediments. These trends are typically shown under 100 mesh fractions. It indicates that the fraction of minus 100 mesh is the optimum size fraction for geochemical and environmental survey.