• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.699-706
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• 2010

We have studied to obtain the slanted finger interdigital(SFIT) type filter was formed on the Langasite substrate and was evaporated two IDT electrode by Aluminum-Copper alloy respectively. We can fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have performed to obtain the properly design conditions about phase shift conditions of the SPIT type filter. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflectors are $5000\;{\AA}$ and $3.6{\mu}m$ respectively. At the first sample, we have employed that the distance from the hot electrode to the reflectors is $2.4{\mu}m$ distance from the ground electrode to the reflectors is $1.8{\mu}m$ and the distance from the hot electrode to the ground is $1.5{\mu}m$ respectively. At the other sample, we have also employed that the distance from the hot electrode to the reflectors and the distance from the ground electrode to the reflectors are $2.4{\mu}m$. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7.3 MHz. And we could obtain that return is less than -20dB, ripple characteristics is probably 3dB and triple transit echo(TTE) is less than -22dB after when we have matched impedance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Journal of radiological science and technology
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• v.2 no.1
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• pp.71-83
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• 1979

Not only the insulating oil used for extra high voltage and high capacity transformer has a lot of possibilites of a corona discharge in oil, but the oil is easily degraded by a response of light oxidization. This study is either to classfy, with priority given to a transformer oil produced in Korea belonging to, the insulating oil No. 2, the sample irradiated the ultraviolet rays, treated a corona discharge in oil by a high voltage DC source and done nothing, or to measure the characteristics of breakdown, V-i, I-t and electrode material. The obtained results can be summarized as followings: (1) Unless the sample is contacted with the air, on the process to irradiate the ultraviolet rays, the sample less influence on the changes of the electric characteristics. At the same time, if the sample is contacted with the air and irradiated the ultraviolet rays, the sample shows a remarkable changes of the electric characteristics, and a declined breakdown strength. This tells us that the influence of the light irradiation must be considered as a primary factor of degrading the insulating oil. (2) In the oil treated by a corona discharge, breakdown voltage is declined more than in the oil not to be treated with it. This means that the degradation of the insulating oil is getting increased by a corona discharge in oil. (3) It shows that the increase of conducting current has little to do with breakdown voltage. (4) The conducting current depending on the electrode materials can be put in order by value as Al>Cu>Fe. This is due to the differences of the work function of each metals, and an chemical reaction with the insulating oil. These result can be a great help in verifying the degradation progress of the insulating oil and furnish a new technical information to the manufacturers of the insulating oil and electrical equipment designers and operators. Besides, this study would be helpful to improve the electrical characteristics of the insulating oil produced in Korea.

• Journal of radiological science and technology
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• v.10 no.1
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• pp.75-83
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• 1987

The insulating oil used for X-ray tube housing were degraded by X-ray irrdiation, high temperature and high anode voltage for normal operation. This study was measured the conduction current-X-ray dose, heating degradation, time, temperature and electric field characteristics and the dependense of electrode materials and gap length in the X-ray irradiatied insulating oil under of D.C voltage. The obtained results can be summarized as following. 1. The conduction current of X-ray irradiated insulating oil is more about $2.5{\sim}3$ times as large as than that of non x-ray irradiated, and is become saturation phenomena after some degree. 2. The conduction current of many times heating x-ray irradiated insulating oil is more than that of a few times heating. 3. The higher temperature x-ray irradiated insulating oil is increased, the more conduction current, and that is increased about ten times as large as when it's temperatures is increased to $80^{\circ}C\;at\;30^{\circ}C$, twenty five times at $100^{\circ}C$. 4. The dependence of electrode materials is appeared at the low electric field, and the small gap length with Fe > Cu > Al. 5. The low electric field than 3000 v/cm is appeared Ohm's law region, and the high is become saturation region at the I-E characteristics. 6. The larger gap length is become, the more conduction current is increased at the same electric field.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.107-112
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• 2000

$(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated $TiO_2/SiO_2/Si$ wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrodes. Various top electrodes as Pt, Al, Ag, Cu were deposited on SCT thin films by sputter and thermal evaporator. The characteristics of C-F and C-V of SCT thin films were not obviously varied with various top electrodes, SCT thin films annealed at $600^{\circ}C$ represents as favorable capacitance characteristics than SCT thin films not annealed, and Pt top electrode have the most high capacitance. The characteristic of I-V of SCT thin films showed that Pt top electrode revealed more less leakage current density than other electrodes, had a leakage current density below 10-8$[A/cm^2]$ until 25[V] applied voltage.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.285-291
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• 2006

Copper powders have been widely used in electrically conductive coatings, electrode materials et al. and are very prospective since they are cheaper than noble metal powders such as silver or palladium. In this study, copper powders for metal filler of EMI shielding have been prepared using a solvothermal process from $CuSO_4$, NaOH, Glucose, mixed solvent ($H_2O$: Ethanol) and hydrazine which was used as a reducing agent at various reaction conditions. The prepared copper powders showed finely dispersed spherical shape without agglomerate, uniform morphology, narrow size distribution, high purity and were about 400-700 nm in size. The prepared powders were characterized using XRD, SEM, TGA, XPS, particle size measurement and EMI shielding efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Analytical Science and Technology
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• v.15 no.1
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• pp.7-14
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• 2002

Laser ablation ion trap mass spectrometry (LAITMS) was developed for the analysis of metal and ceramic samples. For this study, XeCl excimer laser (308 nm) was used for ablating the samples and ITMS was used as a detector. Samples were introduced from outside of a ring electrode and this way of sample introduction was very effective for solid samples when laser ablation was employed. Helium gas was used as a buffer gas, and its effect on sensitivity and some parameters (buffer gas pressure, ion storage time, and cut-off RF voltage) were studied. The optimized conditions were $1{\times}10^{-4}$ Torr of buffer gas pressure, 100 ms of ion storage time and $1150V_{p-p}$ of cut-off RF voltage. From that results, copper (Cu) and molybdenum (Mo) metals were tested with LAITMS and the mass spectra of these pure metals were compared with the natural abundance of isotope ratio. We also examined ceramic samples ($Al_2O_3$, $ZrO_2$) and represented the result of elemental analysis.