• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.5
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• pp.137-142
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• 2018

With the development of the electronic-materials industry, multi-functional metal-composite materials with high thermal conductivity and low thermal expansion must be developed for high reliability and high life expectancy. This paper is a preliminary study on the manufacturing technology of gas reaction control composite material, focusing on the prediction of the equivalent thermal properties of Al-AlN composite materials. Numerical equivalent property values are obtained by using finite element analysis and compared with theoretical formulas. Al-AlN composite materials should become the optimal composite material when the proportion of the reinforcing phase is less than 0.5.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.595-600
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• 2006

The preparation of $\beta$-SiAlON powder by SHS in the system of $Si-Al-SiO_2-NH_4F(\beta-Si_3N_4)$ was investigated in this study. In the preparation of SiAlON powder, the effect of gas pressure, compositions such as Si, $NH_4F$, \beta-Si_3N_4$ and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $\beta$-SiAlON was $3Si+Al+2SiO_2+NH_4F$. The $\beta$-SiAlON powder synthesized in this condition was a single phase $\beta$-SiAlON with a rod like morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.4
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• pp.41-47
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• 2019

The advent of highly integrated, high-power electronics requires low a coefficient of thermal expansion performance to prevent delamination between the heat dissipation material and substrate. This paper reports a preliminary study on the manufacturing technology of gas reaction control composite material, focusing on the prediction of the thermal expansion coefficients of Al-AlN composite materials. We obtained numerical equivalent property values by using finite element analysis and compared the values with theoretical formulas. Al-AlN should become the optimal composite material when the proportion of the reinforcing phase is approximately 0.45.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.730-734
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• 2005

Cr-Al-Si-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating and DC magnet :on sputtering technique in $N_2/Ar$ mixture. The Cr-tll-Si-N coatings were synthesized with different Si contents. Their microstructure and mechanical properties were systematically investigated. The average size of crystallites largely decreases with the increase of Si content compared with Cr-Al-N. The microhardness of Cr-Al-Si-N coatings largely increases from 24 to 55 GPa. The enhanced hardness is believed to originate from the microstructural change by the fine composite microstructure of Cr-Al-N coatings with Si addition. The average friction coefficient of Cr-Al-Si-N coatings decreases from 0.84 to 0.45 with increasing Si content up to $16\;at.\%$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.205-207
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• 2009

아크이온플래이팅 기술과 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 Cr-Al-Mo-N 코팅을 증착하였다. $N_2$/Ar 혼합가스 분위기하에 아크 타겟은 Cr을 사용하였고 스퍼터링 타겟은 Al과 Mo를 사용하였으며 합성된 Cr-Al-Mo-N 코팅은 주로 치환고용된 (Cr, Al, Mo)N으로 구성되었다. 최고 경도값은 Mo 함량이 24.2 at.%일 때 35 GPa을 나타냈으며 마찰계수는 Mo의 함량이 0에서 33.2 at.%로 증가함에 따라 0.9에서 0.48로 감소하였다. 이는 $MoO_3$가 코팅면과 스틸볼 계면에서 고체 윤활제로 작용한 것으로 사료된다. 그러나 Cr-Al-Mo-N 코팅은 MoN의 낮은 내산화온도로 인하여 Cr-Al-N에 비하여 더 낮은 온도에서 산화되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1479-1481
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• 2002

AlN thin films were deposited on Si(100) and $SiO_2$/Si substrates using R.F. magnetron sputtering system. The effect of various deposition conditions on the crystal orientation of AlN films was investigated to obtain a highly (002)-oriented films. SAW filters were fabricated using AlN films with various thicknesses and their frequency response characterizations were measured. Experimental results showed that the (002)-orientation and surface roughness of AlN films played a crucial role of determining the frequency response of AlN SAW devices.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.