• Clean Technology
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• v.28 no.2
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• pp.154-162
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• 2022

Microstructured Al@Al₂O₃ and Al@Ni-Al LDH (LDH = layered double hydroxide) core-shell metal-ceramic composites are prepared by hydrothermal reactions of aluminum (Al) metal substrates. Controlled hydrothermal reactions of Al metal substrates induce the hydrothermal dissolution of Al ions at the Al-substrate/solution interface and reconstruction as porous metal-hydroxides on the Al substrate, thereby constructing unique metal-ceramic core-shell composite structures. The morphology, composition, and crystal structure of the core-shell composites are affected largely by the ions in the hydrothermal solution; therefore, the critical physicochemical and surface properties of these unique metal-ceramic core-shell microstructures can be modulated effectively by varying the solution composition. A Ni/Al@Al₂O₃ catalyst with highly dispersed catalytic Ni nanoparticles on an Al@Al₂O₃ core-shell substrate was prepared by a controlled reduction of an Al@Ni-Al LDH core-shell prepared by hydrothermal reactions of Al in nickel nitrate solution. The reduction of Al@Ni-Al LDH leads to the exolution of Ni ions from the LDH shell, thereby constructing the Ni nanoparticles dispersed on the Al@Al₂O₃. The catalytic properties of the Ni/Al@Al₂O₃ catalyst were investigated for CO₂ methanation reactions. The Ni/Al@Al₂O₃ catalyst exhibited 2 times greater CO₂ conversion than a Ni/Al₂O₃ catalyst prepared by conventional incipient wetness impregnation and showed high structural stability. These results demonstrate the high effectiveness of the design and synthesis methods for the metal-ceramic composite catalysts derived by hydrothermal reactions of Al metal substrates.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.5
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• pp.231-236
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• 2007

High velocity oxy-fuel (HVOF) spraying was used to coat Ti(Al,O)/$Al_2O_3$ powder onto the SS41 steel plate. Macrostructure of the coated specimen has been investigated by scanning electron micrograph (SEM). High temperature oxidation behavior of the coated specimen and SS41 steel have been studied. From the results of SEM observation, Ti(Al,O)/$Al_2O_3$ powder was coated well onto the substrate SS41 steel. Porosity onto the coated layer was only 0.38%. The oxidation results showed that Ti(Al,O)/$Al_2O_3$ powder coated SS41 steel have improved little oxidation resistance at $900^{\circ}C$ in air, but improved remarkably oxidation resistance at $800^{\circ}C $ in air compare to the substrate SS41 steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.101-104
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• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.161-165
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• 2017

In this paper, synthesis of terephthalate intercalated Zn-Al: Layered double hydroxides (LDHs) was studied. We designed freestanding Zn-Al: carbonate LDH nanosheets for a facile exchange technique. The as-prepared Zn-Al carbonate LDHs were converted to terephthalate intercalated Zn-Al:LDHs by ion exchange method. Initially, Al-doped ZnO (AZO) thin films were deposited on p-Si (001) by facing target sputtering. For synthesis of free standing carbonate Zn-Al:LDH, we dipped the AZO thin film in naturally carbonated water for 3 hours. Further, Zn-Al: carbonate LDH nanosheets were immersed in terepthalic acid (TA) solution. The ion exchange phenomena in the terephthalate assisted Zn-Al:LDH were confirmed using FT-IR analysis. The crystal structure of terephthalate intercalated Zn-Al:LDH was investigated by XRD pattern analysis with different mole concentrations of TA solution and reaction times. The optimal conditions for intercalation of terephthalate from carbonated Zn-Al LDH were established using 0.3 M aqueous solution of TA for 24 hours.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.25-29
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• 1999

We have developed a laser molecular beam epitaxy system for the layer-by-layer growth of oxide thin films. Using this system, we could grow and control oxide thin films of LaAlO$_3$in a molecular layer epitaxy mode on the atomically flat SrTiO$_3$ substrate with a LaAlO$_3$single crystal target. Very clear RHEED oscillations were observed during to growth of a LaAlO$_3$ film for a long period under the optimized conditions of substrate temperature at $650^{\circ}C$, oxygen pressure at 1$\times$10\ulcorner torr, and an incident laser fluence of 4.6J/$\textrm{cm}^2$. The height of mono-layer-LaAlO$_3$ film grown during one period of RHEED intensity oscillation was 3.8$\AA$.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1402-1404
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• 2001

Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.692-693
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• 2006

Behavior of stoichiometric and near-stoichiometric NiAl at plasma spray deposition, without and with a bond coat, for coating layers realization on a low alloyed steel substrate, has been investigated. In all variants, NiAl particle melting and subsequent welding at the impact with substrate were observed, forming a relatively compact and adherent coating layer with the NiAl stability maintaining - all assuring the coating layer oxidation and corrosion resistance. Good results from these points of view, also validated through corrosion tests, were obtained for 45:55 Ni:Al composition without a bond coat but adopting an Ar protective surrounding of plasma jet.

• Journal of Surface Science and Engineering
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• v.31 no.5
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• pp.278-285
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• 1998

Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.207-215
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• 1997

Aluminum (Al) thin films were deposited on the Si(100) and TiN(60 nm)/Si (100) substrate by the ionized cluster beam deposition (ICBD) method. The characteristics of thin films were examined by the $\alpha$-step, four-point-probe, Scanning Electron Spectroscopy (SEM), Auger Electron Spectroscopy (AES). The growth rate of the Al thin film increased and the resistivity decreased as the crucible temperature increased. At the crucible temperature $1800^{\circ}C$, the microstructure of Al thin film deposited was smooth and continuous the resistivity decreased as the acceleration voltage increased. Also, the minimum resistivity in Si(100) substrate and TiN(60 nm)/Si(100) substrate were 3.4 $\mu \Omega \textrm {cm}$, 3.6 $\mu \Omega \textrm {cm}$ at the acceleration voltage 4 kV and 2 kV respectively. From the AES spectrumt 14 wasn't detected any impurities In the Al thin film. Therefore the resistivity of Al thin film was affected by the microstructure of film.