• Current Optics and Photonics
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• 제2권1호
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• pp.79-84
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• 2018

We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.

• 한국분말재료학회지
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• 제9권1호
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• pp.19-24
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• 2002

This paper reports the results of an investigation into the effect of Cu additions upon the nano-crystallization behaviour of an Al-Y-Ni alloy. 1 at.% Cu was added to a base alloy of Al/sub 88/Y₄Ni/sub 8/ either by substitution for Al to form Al/sub 87/Y₄Ni/sub 8/Cu₁, or by substitution for Ni to form Al/sub 88/Y₄Ni/sub 7/Cu₁. Consistent with previous findings in the literature, the substitution of Cu for Al was found to increase the thermal stability of the amorphous phase whereas the substitution of Cu for Ni was found to decrease its thermal stability. Comparing the microstructures of these alloys after heat treatment to produce equivalent volume fractions of Al nanocrystals showed average grain sizes of 14 nm, 12 nm and 9 nm for the alloys Al/sub 88/Y₄Ni/sub 8/, Al/sub 87/Y₄Ni/sub 8/Cu₁respectively. The effect of Cu in refining the size of the nanocrystals was attributed to enhanced nucleation increasing the number density of the nanocrystals, rather than diffusion limited or interface limited growth.

• 한국재료학회지
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• 제25권6호
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• pp.265-268
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• 2015

ZnO micro/nanocrystals at large scale were synthesized through the thermal evaporation of Al-Zn mixtures under air atmosphere. The effect of synthetic temperature and time on the morphology of the micro/nanocrystals was examined. It was found that the temperature and time affected the morphology of the ZnO crystals. At temperatures below $900^{\circ}C$, no crystals were synthesized. At a temperature of $1000^{\circ}C$, ZnO crystals with a rod shape were synthesized. With an increase in temperature from $1000^{\circ}C$ to $1100^{\circ}C$, the morphology of the crystals changed from rod shape to wire and granular shapes. As the time increased from 2 h to 3 h at $1000^{\circ}C$, tetrapod-shaped ZnO crystals started to form. XRD patterns showed that the ZnO crystals had a hexagonal wurtzite structure. EDX analysis revealed that the ZnO crystals had high purity. It is believed that the ZnO nanowires were grown via a vapor-solid mechanism because no catalyst particles were observed at the tips of the micro/nanocrystals in the SEM images.

• 한국세라믹학회지
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• 제44권5호
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• pp.151-154
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• 2007

Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.

• Applied Microscopy
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• 제43권3호
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• pp.127-131
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• 2013

The crystallization behavior in the $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$amorphous alloys has been investigated. As-quenched $Al_{87}Ni_3Y_{10}$ amorphous phase decomposes by simultaneous formation of Al and intermetallic phase at the first crystallization step, while as-quenched $Al_{88}Ni_3Y_9$ amorphous phase decomposes by forming Al nanocrystals in the amorphous matrix. The density of Al nanocrystals is extremely high and the size distribution is homogeneous. Such a microstructure can result from rapid explosion of the nucleation event in the amorphous matrix or growth of the preexisting nuclei embedded in the as-quenched amorphous matrix. The final equilibrium crystalline phases and their distribution at 873 K are exactly same in both $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$ alloys.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.40-45
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• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.3-4
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• 2005

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

• 한국광물학회지
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• 제21권1호
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• pp.27-35
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• 2008

천연 광물소재를 양이온 치환하여 환경개선재로 응용되고 있는 $Lumilite^{(R)}$의 원료 중 원광의 광물학적 특징을 분석하고 구성광물의 나노결정의 발달특징을 관찰하였다. 이를 위하여 편광현미경에 의한 조직관찰, XRD, SEM, FTIR, XRF 분석을 실시하였다. 구성 광물상은 클리높틸로라이트, 일라이트, 석영, 알바이트 사장석이며, 본 시료는 미립질의 치밀한 조직을 가지는 것이 특징이다. 나노결정의 크기는 $70{\sim}100\;nm$ 범위가 흔하면, 비교적 등립질 내지 반등립질로 구성된다. 나노결정들의 단면은 아원형 내지 완만한 각형이며, 나노결정의 표면에는 수 nm 크기의 원형돌기가 거의 균질하게 분포한다. 전시료의 화학조성은 $SiO_2$ $74.22{\sim}75.65\;wt.%$, $Al_2O_3$ $13.25{\sim}13.72\;wt.$, CaO $4.23{\sim}5.15\;wt.%$이며, 그 외 주성분과 수분은 미량으로 함유된다. 원료물질은 결정학적으로 $500^{\circ}C$까지는 안정한 상을 유지하나, $700^{\circ}C$에서는 구조가 거의 파괴된다. $Lumilite^{(R)}$가 흡착능력이 뛰어나고 높은 양이온치환능력을 가지는 것은 나노결정들이 잘 발달하고, 이들 사이에는 다양한 미세공극이 잘 발달하기 때문인 것으로 보인다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.

• 대한화학회지
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• 제56권5호
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• pp.591-596
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• 2012

Preparation of $AlPMo_{12}O_{40}$ (AlPMo) salts, supported on mesostructured SBA-15 silica, by the reaction deposition strategy causes the formation of isolated AlPMo nanocrystals inside the nanotubular channels. The remarkable characteristic of the SBA-15 structure is that all the cylindrical pores are connected by some small channels. This makes the whole pore system in SBA-15 three-dimensional. We have used 2D hexagonal SBA-15 silicas as hard templates for the nanofabrication of AlPMo salt nanocrystal. The oxidation of alcohols occurs effectively and selectively with $H_2O_2$ as the oxidant. AlPMo salt nanocrystal was used as the catalyst.