• 대한치과보철학회지
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• 제36권5호
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• pp.701-720
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• 1998

Research advances in dental implantology have led to the development of several different types of materials and it is anticipated that continued research will lead to advanced dental implant materials. Currently used pure titanium has relatively low hardness and strength which may limit its ability to resist functional loads as a dental implant. Ti-6Al-4V also has potential problems such as corrosion resistance. osseointegration properties and neurologic disorder due to aluminium and vanadium, known as highly toxic elements, contained in Ti-6Al-4V. Newly developed titanium based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) which do not contain toxic metallic components were designed by the Korea Institute of Science and Technology (KIST) with alloy design techniques using Zr, Nb, Ta, Pd, and In which are known as non-toxic elements. Biocompatibility and osseointegration properties of these newly designed alloys were evaluated after implantation in rabbit femur for 3 months. The conclusions were as follows : 1. Mechanical properties of the new designed Ti based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) demonstrated close hardness and tensile strength values to Ti-6Al-4V. 2. New desinged experimental alloys showed stable corrosion resistance similar to the pure Ti but better than Ti-6Al-4V. However, the corrosion rate was higher for the new alloys. 3. Cell culture test showed that the new alloys have similar cell response compared with pure Ti and Ti-6Al-4V with no cell adverse reaction. 4. New designed alloys showed similar bone-metal contact ratio and osseointegration properties compared to pure Ti and Ti-6Al-4V after 3 months implantation in rabbit femur. 5. Four different surface treatments of the metals did not show any statistical difference of the cell growth and bone-metal contact ratio.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.712-718
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• 2003

진공 증착한 CdS 박막의 질소 이온 주입 효과를 X-선 회절 검사, 광 투과율, 라만 산란 특성을 통하여 조사하였다. 질소 이온 주입하지 않은 CdS 박막은 (0 0 2)면으로의 우선 방위를 가지고 성장하였다. 질소 이온 주입한 시편의 경우 metallic Cd가 형성됨을 XRD 분석 결과 알 수 있었다. 가시광 영역에서의 광투과율은 질소 이온 주입 양이 많아짐에 따라 크게 감소하였다. 또한 질소 이온 주입 양에 따라 CdS 박막의 흡수 계수는 지수 함수적으로 증가하였고, 밴드 갭은 감소하였다 CdS 박막의 라만 peak 위치는 질소 이온 주입 양에 관계없이 299 cm-1로 거의 일정하지만, peak의 FWHM은 이온 주입 양이 증가함에 따라 커졌고, peak 면적은 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 한국동물번식학회:학술대회논문집
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• 한국동물번식학회 2001년도 발생공학 국제심포지움 및 학술대회 발표자료집
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• pp.25-31
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• 2001

During early development, a dramatic reduction in methylation levels occurs in mouse (Monk et al., 1987). The process of epigenetic reprogramming in early embryos erases gamete-specific methylation patterns inherited from the parents (Howlett ＆ Reik 1991, Monk et al., 1987, Oswald et al., 2000, Sanford et al., 1984). This genome-wide demethylation process may be a prerequisite for the formation of pluripotent stem cells that are important for the later development (Reik ＆ Surani 1997). During post-implantation development, a wave of de novo methylation takes place; most of the genomic DNA is methylated at defined developmental timepoints, whereas tissue-specific genes undergo demethylation in their tissues of expression (Kafri et al., 1992, Razin ＆ Kafri 1994). Another demethylation-remethylation cycle of epigenetic reprogramming takes place during gametogenesis and is necessary for resetting of genomic imprinting (Solter 1988). The dynamic epigenetic reprogramming events appear to be basic and are probably conserved in eutherian mammals (see below). (omitted)

• Journal of Magnetics
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• 제10권3호
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• 한국결정성장학회지
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• 제9권3호
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• pp.327-333
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• 1999

Ion implantation, photo-lithography, Ar ion milling, hot press를 이용한 micro-fabrication 방법으로 고순도 단결정 알루미나 표면에 Ca를 제한된 양으로 첨가하고, 내부에 여러 가지 형태의 기공을 갖는 bi-crystal을 만들었다. 이 bi-crystal 고순도 알루미나에 미치는 Ca의 영향을 평가하기 위하여 내부 기공의 형태 변화와 결정의 성장을 열처리에 따라 광학현미경으로 관찰하였다. 열처리에 따라 inner crack-like pore의 내부표면에 dot와 육각형의 형태를 갖는 결정 입자가 생성되는 것을 관찰할 수 있었다. $1,500^{\circ}C$로 열처리한 경우에 CaO . $6Al_2O_3$로 생각되는 bar 형태의 결정이 표면에 석출되는 것이 관찰되었으며, 이 결정이 $1,600^{\circ}C$에서 열처리하면 사라지는 것으로 보아 이 온도 부근에서 알루미나에 대한 Ca의 solubility limit 또는 diffusion rate가 변화하는 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.3-4
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• 2005

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.21-22
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.