• Title/Summary/Keyword: Al current collector

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Characterization of Hot Electron Transistors Using Graphene at Base (그래핀을 베이스로 사용한 열전자 트랜지스터의 특성)

  • Lee, Hyung Gyoo;Kim, Sung Jin;Kang, Il-Suk;Lee, Gi Sung;Kim, Ki Nam;Koh, Jin Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.3
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    • pp.147-151
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    • 2016
  • Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

Fabrication and Characterization of AlGaAs/GaAs HBT (AlGaAs/GaAs HBT의 제작과 특성연구)

  • 박성호;최인훈;오응기;최성우;박문평;윤형섭;이해권;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.104-113
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    • 1994
  • We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

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Experimental performance investigation of compound parabolic cavity receiver having single absorber tube

  • Omar Al-Nabhani;Saud Al-Kalbani;Azzam Al-Alawi;Afzal Husain
    • Advances in Energy Research
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    • v.8 no.3
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    • pp.155-163
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    • 2022
  • The current study presents experimental research on a parabolic trough collector with tube and cavity receivers. The primary concentrating parabolic reflector is designed for an aperture area of 2×2 m2 with mirror-polished stainless steel sheet reflectors. The cavity receiver consists of a compound parabolic secondary reflector and a copper tube. Both the conventional tube receiver and the cavity receiver tube are coated with black powder. The experiments are carried out to compare the efficiency of the cavity receiver with the tube receiver for fluid temperature rise, thermal efficiency, and overall losses. The experiments showed significantly higher fluid temperature rise and overall efficiency and lower thermal losses for the cavity receiver compared to the tube receiver within the parameters explored in this study.

A study of the fabrication of AlGaAs/GaAs HBT with an air-bridge isolation structure induced by isotropic undercut etching (등방성 언더컷 식각에 의한 에어-브리지 소자 격리 구조를 갖는 AaGaAs/GaAs HBT의 제작에 관한 연구)

  • 김연태;이제희;윤상호;권오섭;반용찬;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.40-47
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    • 1998
  • This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

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Investigation of Al-Ni Alloys Deposition during Over-discharge Reaction of Na-NiCl2 Battery

  • Kim, Jeongsoo;Jo, Seung Hwan;Park, Dae-In;Bhavaraju, Sai;Kang, Sang Ook
    • Journal of the Korean Electrochemical Society
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    • v.19 no.3
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    • pp.57-62
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    • 2016
  • The over-discharging phenomena in sodium-nickel chloride batteries were investigated in relation to decomposition of molten salt electrolyte and consequent metal co-deposition. From XRD analysis, the material deposited on graphite cathode current collector was revealed to be by-product of molten salt electrolyte decomposition. In particular, the result showed that the Ni-Al alloys ($Al_3Ni_2$, $Ni_3Al$ and $Al_3Ni$) were electrochemically deposited on graphite current collectors in line with over-discharging behaviors. It is assumed that the $NiCl_2$ solubility in molten salt electrolytes leads to the co-deposition of Ni-Al alloys by increasing metal deposition potential above 1.6 V (vs. $Na/Na^+$). The cell tests have revealed that the composition of molten salt electrolytes modified by various additives makes a decisive influence on the over-discharging behaviors of the cells. It was revealed that NaOCN addition to molten salt electrolytes was advantageous to suppress over-discharge reactions by modifying the characteristics of molten salt electrolytes. NaOCN addition into molten salt electrolytes seems to suppress Ni solubility by maintaining basic melts. The cell using modified molten salt electrolyte with NaOCN (Cell D) showed relatively less cell degradation compared with other cells for long cycles.

Active Optical Logic Devices Using Surface-emitting Microlasers (표면광 마이크로 레이저를 이용한 능동형 광 논리 소자의 동작 특성)

  • 유지영
    • Korean Journal of Optics and Photonics
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    • v.4 no.3
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    • pp.294-300
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    • 1993
  • Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

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Synthesis of Organic Radical Copolymers Based on Polystyrene and Their Performance for Batteries (폴리스티렌 기반 유기 라디칼 공중합체의 합성과 전지특성)

  • Yang, Eui-Seok;Ryu, Sang-Woog
    • Journal of the Korean Electrochemical Society
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    • v.19 no.4
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    • pp.141-147
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    • 2016
  • In this study, homo and copolymers of 2,2,6,6-tetramethyl-4-piperidyl methacrylate(TMA) and synthesized styrene derivative, 2,2,6,6-tetramethylpiperidine-4-vinylbenzyl ether(TVBE) were obtained by radical polymerization and oxidized to produce corresponding polymer radicals. The polymer radicals were mixed with carbon black, binders and coated onto Al current collector. The battery performance is then characterized by fabricating coin cells. As results, the polystyrene based organic radicals show lower oxidize efficiency and discharge capacity than methacrylate based one. However, the former shows better capacities from discharge experiments performed at $60^{\circ}C$ which suggests a possible way to overcome the high temperature fade out of performance in usual organic radical batteries. Also as expected, an excellent C-rate performance is observed in all the cells consisted of organic polymer radicals.

Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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