• 제목/요약/키워드: Al concentration

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Presputtering 공정변수에 따른 AIN 박막의 c축 배향특성 (The C-Axis Preferred Orientation Characteristic of AIN Thin Film as Sputtering parameter of Presputtering)

  • 박영순;김덕규;소병문;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.246-250
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    • 2000
  • Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.

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The Densification and Photoluminescence Characteristics of Ca-α-SiAlON:Eu2+ Plate Phosphor

  • Park, Young-Jo;Lee, Jae-Wook;Kim, Jin-Myung;Golla, Brahma Raju;Yoon, Chang-Bun;Yoon, Chulsoo
    • 한국세라믹학회지
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    • 제50권4호
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    • pp.280-287
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    • 2013
  • Plate-type phosphor is a promising substitute in overcoming the issues related to the powder phosphor paste mixed with resin. In this research, $Ca-{\alpha}-SiAlON:Eu^{2+}$ plate phosphor ($Ca_xSi_{12-(m+n)}Al_{m+n}O_nN_{16-n}:Eu_y$) was investigated for the varied compositions (m,n) of the host crystal with the fixed Eu content (y). Densification was promoted for the compositions with increasing 'm' values for the m=2n relationship. Dictated by the Eu concentration inside the phosphor crystal, photoluminescence intensity was stronger in ${\alpha}2$ specimen (m = 3.0, n = 1.5) containing the second phases when compared to ${\alpha}1$ specimen (m = 1.5, n = 0.75) comprising a single-phase ${\alpha}$-SiAlON. The concentration of Eu in the non-emitting amorphous interfacial glass phase was 2~4 times of the designed Eu concentration inside the ${\alpha}$-SiAlON crystal.

Effect of [Al(DMSO2)3]3+ Concentration on Al Electrodeposition from AlCl3/Dimethylsulfone Baths

  • Kim, Sangjae;Matsunaga, Naoya;Kuroda, Kensuke;Okido, Masazumi
    • Journal of Electrochemical Science and Technology
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    • 제9권1호
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    • pp.69-77
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    • 2018
  • Aluminum electrodeposition was carried out in dimethylsulfone ($DMSO_2$) baths containing 6.2-28.3 mol% $AlCl_3$ at 403 K. The electrochemically active species for Al electrodeposition in $DMSO_2$ baths were investigated. Electrochemical behavior of the electrolyte and the deposition mechanism were studied via cyclic voltammetry (CV). Properties of the deposits were assessed by scanning electron microscopy with energy-dispersive X-ray spectroscopy and X-ray diffraction. In addition, structures of the ionic complexes formed with aluminum in the bath were characterized by $^{27}Al$ nuclear magnetic resonance (NMR) spectroscopy. NMR spectra revealed that all baths contained two ionic species: $AlCl_4{^-}$ and $[Al(DMSO_2)_3]^{3+}$. Al electrodeposited when the $[Al(DMSO_2)_3]^{3+}$ concentration was the highest (23.3 mol% $AlCl_3$) exhibited fine grain sizes, relatively smooth surfaces, and high purities.

개선된 Ferron 분석 비교를 통한 Al(III) 가수분해종 특성 연구 (Comparison of the characteristics of Al(III) hydrolyzed species by improved ferron assay test)

  • 윤미형;강임석
    • 상하수도학회지
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    • 제36권3호
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    • pp.177-186
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    • 2022
  • In this study, newly improved Ferron assay test haved on timed spectrometry was used for the determination of hyolrolytic Al species presented in PACl coagulant. The color development reagent ferron was prepared by using conventional method and two newly developed methods. Then the ferron assay test was used to compare and analyze the distribution of Al(III) hydrolyzed species presented in the prepared PACl and alum. The preparing method of reagent A required an aging period of 7 days by adding a hydroxylamine hydroxide and a 1,10-phenanthroline monohydrate reagent, whereas the preparing method of reagent B was used as a coloring agent immediately without aging time. The regression analysis between UV absorbance and Al concentrations of conventional method and newly developed method of ferron reagents in low-concentration aluminum solutions and high-concentration aluminum solutions, showed the correlation coefficients of 0.999 or higher, as showing high correlations of conventional method and newly developed method. Applying Ferron assay test, Al species in the PACls and alum were classified as Ala(monomeric Al), Alb (polymeric Al), and Alc (colloidal and precipitated Al). Distribution of Al(III) hydrolyzed species according to the preparation of ferron colorimetric reagents was similar.

Li[Ni0.8Co0.15Al0.05]O2 전극의 공침 조건을 통한 구조적 변화와 전기적 특성의 향상 고찰 (The Study on Structural Change and Improvement of Electrochemical Properties by Co-precipitation Condition of Li[Ni0.8Co0.15Al0.05]O2 Electrode)

  • 임정빈;손종태
    • 전기화학회지
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    • 제14권2호
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    • pp.98-103
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    • 2011
  • 본 연구에서는 리튬 이차 전지의 양극 재료인 $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$을 공침법(co-precipitation)을 활용하여 성공적으로 합성하였다. 이때 $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$의 금속염 농도를 실험 변수로 하여 합성 조건을 변화 시키면서 금속염 농도 변화로 인한 전지 특성의 영향을 분석하였다. SEM(scanning electron microscope)과 XRD (X-Ray Diffraction) 분석결과 금속염의 농도(2몰/L)가 높을 경우 분말의 균일성과 구조의 결정성이 떨어져 전지 특성이 저하되는 현상이 발생하였다. 균일성과 결정성을 향상시키기 위하여 금속염의 농도(1몰/L)를 줄여 합성 한 결과 입도의 미분이 적고 균일성이 및 구조적 결정성이 증가됨을 확인하였다. 또한 충/방전 용량, C-rate, 사이클 등 전기화학적 특성에서도 상대적으로 우수한 특성을 보였다. 이러한 측정 결과를 바탕으로 $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ 물질의 금속염 농도에 따른 영향을 종합적으로 고찰하였다.

합성가스에서 경질올레핀 제조를 위한 피셔-트롭시 반응용 구형 철-알루미나 촉매 합성 (Preparation of Fe/$Al_2O_3$ Granules for Conversion of Syngas to Light Olefins by Fischer-Tropsch Reaction)

  • 이동준;정광덕;유계상
    • 공업화학
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    • 제21권3호
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    • pp.333-336
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    • 2010
  • 합성가스에서 경질 올레핀을 합성하는 Fishcer-Tropsh 반응을 위하여 다양한 조성을 가지는 구형 철-알루미늄 촉매를 졸-겔 오일법으로 합성하였다. 합성된 구형 촉매를 이용하여 다양한 특성분석 및 반응성능을 측정하였다. 촉매의 비표 면적은 철의 비율이 증가할수록 감소하였고, CO 전환율은 Al/Fe비가 1.5인 촉매가 가장 우수하였다. 올레핀 선택도는 Al/Fe비에 영향을 받지 않았다. 함침법을 이용하여 K를 첨가한 경우 반응특성에 영향을 주었다. 첨가한 K의 농도가 증가할수록 초기 CO 전환율과 올레핀 선택도는 향상됐지만 촉매의 활성도는 급격히 감소하였다.

Scattering법을 이용한 BaMgAl10O17:Eu2+ 청색형광체의 구조와 발광특성 연구 (A Study of the Structure and Luminescence Properly of BaMgAl10O17:Eu2+ Blue Phosphor using Scattering Method)

  • 김광복;김용일;구경완;천희곤;조동율
    • 한국전기전자재료학회논문지
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    • 제15권1호
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    • pp.67-74
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    • 2002
  • A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.

Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

  • Seok, Hye-Won;Kim, Sei-Ki;Kang, Yang-Koo;Lee, Youn-Jin;Hong, Yeon-Woo;Ju, Byeong-Kwon
    • 센서학회지
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    • 제23권2호
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    • pp.94-98
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    • 2014
  • Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

Al과 Pr이 첨가된 SrTiO$_3$ 적색 형광체의 발광 특성 (The Luminescent Properties of SrTiO$_3$ :Al, Pr Red Phosphor)

  • 박정규;류호진;박희동;최승철
    • 한국세라믹학회지
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    • 제36권5호
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    • pp.478-482
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    • 1999
  • SrTiO3 :Al, Pr phosphor as an oxide compound phosphor is expect to be applied for a field emission display(FED). In this phosphor the excitation spectrum shows a different tendency according to an addition Al3+ and Pr3+ In this excitation spectrum the main peak at 359 nm represent excitation level of Pr3+(1S0longrightarrow1D2 transition) and the absorption characteristic according to Ti/Sr molar ratio is influenced by the structure symmetry. The emission spectrum exhibits the red luminescence with the radiative decay of the 1D2 states(1D2 longrightarrow3H4 transition) The concentration quenching phenomena at 1D2 state shows up as Al3+ and Pr3+ ion concentration increases.

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Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films

  • Kim, Min-Su;Yim, Kwang-Gug;Son, Jeong-Sik;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
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    • 제33권4호
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    • pp.1235-1241
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    • 2012
  • Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy.