• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of Korean Society of Water and Wastewater
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• v.23 no.4
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• pp.459-469
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• 2009

It is well known that coagulation pretreatment can reduce foulants prior to membrane filtration. The purpose of this research was to investigate the effects of coagulation on fouling of ceramic microfiltration membrane($0.1 {\mu}m$) using pilot plant of $150m^3/day/train$ capacity. Train A membrane system has pretreatment process of ozonation and coagulation while train B has only coagulation. Two types of coagulation operation were investigated: back mixer(rapid mixing with or without slow mixing) which is a conventional mechanically stirred mixer and an inline static mixer. Ozone dose rate for train A was 1 mg/L and ozone contact time was 12 min. The coagulation dose(PACl 10% as $Al_2O_3$) rate was changed 20~40 mg/L according to experimental schedule. In this experimental conditions, the coagulation of back mixer type with rapid mixing(GT=72,000) and slow mixing(GT=45,000) was the best effective in reduction of ceramic membrane fouling regardless preozonation. Especially, the effect of inline static mixer was sensitive to change in water quality. Ozonation mainly affected irreversible fouling rather than reversible fouling in accordance with less adsorption of NOM on the membrane surface. Thus, the increase rate of the nomalized TMP(trans membrane pressure) at $25^{\circ}C$ for train A was relatively lower than that of train B under same coagulation process with same coagulant dosage. The best performance of ceramic membrane appeared in case of combined process with ozonation, therefore this integrated process is able to archive less coagulant dosing and secure a stability of ceramic membrane system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.108-112
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• 2012

Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 90 % of the market, despite the development of a variety of thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon photovoltaic remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner thickness of silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials of different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With lower paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 130 micron thickness of the wafer even though the conversion efficiency decrease of 0.5 % occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al paste application.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• Journal of Conservation Science
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• v.38 no.2
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• pp.124-132
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• 2022

Through scientific analysis, this study identified the material characteristics of metal foil decorating the border line and knotting of the National Folklore Cultural Heritage 'Pouch for the Sutra Embroidered with a Sun and Moon Design'. Through Scanning Electron Microscope-Energy Dispersive Spectroscopy results, it was estimated that silver (Ag) and sulfur (S) were present in the metal foil, and silver leaf was also attached to the medium. S may discolor Ag from yellow to black depending on its concsentration and contact time. Yellow color could not be identified in metal foil at present. But there existed an example of the preparation of a gold-colored flat silver thread; therefore, further research is needed to estimate the original color. The lamella was reddish brown on the back. Aluminum, silicon, and iron were also detected and were the main components found in red soil. This is believed to be the red adhesive in traditional flat gold thread and is considered to be an adhesive-related component of the metal foil. From the gas chromatography mass spectrometry results, the adhesive component was confirmed to be animal glue.