• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.423-437
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• 1989

Al2O3/ZrO2 composites were prepared by precipitation method using Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O as starting materials and NH4OH as a precipitation agent. Al2O3/ZrO2 composites(series A) were prepared by mixing Al2O3 powder obtained by single precipitation method with ZrO2(＋3m/o Y2O3) powder obtained by co-predipitation method. Al2O3/ZrO2 composites (series B) were prepared by co-precipitation method using the three starting materials. In all cases, the composition was controlled as Al2O3-15v/o ZrO2(＋3m/o Y2O3). The composites of series A showed higher final relative densities than those of series B and tetagonal ZrO2 in all cases was retained to about 95% at room temperature. ZrO2 particles were coalesced more rapidly in grain boundary of Al2O3 than within Al2O3 grain. ZrO2 particles were located at 3-and 4-grain junction of Al2O3 and limited the grain growth of Al2O3. It was observed that MgO contributed to densification of Al2O3 but limited grain growth of Al2O3 by MgO was not remarkable. In all Al2O3/ZrO2 composites, exaggerated grain growth of Al2O3 was not observed and Al2O3/ZrO2 composites were found to have homogeneous microstructures.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.201-206
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• 2005

In this work, we tried to improve the fabrication process in HVPE (Hydride Vapor Phase Epitaxy) system by using Si(111) substrate with pre-deposited Al layer. PL measurements was done for samples with and without pre-deposited Al on Si and it was also examined the dependence of the optical characteristic properties on AlN buffer thickness for GaN/AIN/Al/Si. A sample with thin Al nucleation layer on Si substrate reveals a better optical property than the other. And it suggests that the thickness for AlN buffer layer with thin Al nucleation layer on Si(111) substrate is most proper about $260{\AA}$ to grow GaN in HVPE system. The surface morphology of GaN clearly shows the hexagonal crystallization. The XRD pattern showed strong peak at GaN{0001} direction.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.

• Proceedings of the Korean Society of Fisheries Technology Conference
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• 2003.05a
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• pp.322-323
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• 2003

연쇄구균병은 담수어 및 해산어에 패혈증을 일으켜 양식산업에 막대한 피해를 주는 질병이다. 해산양식어류인 방어(Kusuda et al., 1976; Minami, et al., 1979), 넙치(Nagatsugawa, 1983; Heo et al., 2001), 터봇(Domenech et al., 1996), gilthead sea bream 및 European sea bass (Zlotkin et al., 1998a) 등의 연쇄구균병에 관한 연구가 활발히 진행되고 있고, 특히 최근에는 PCR에 의한 신속진단 및 동정에 관한 연구가 이루어지고 있다(Aoki et al., 2000; Lee et al., 2001; Nguyen et al., 2002). (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.144-145
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• 2002

Al$_2$O$_3$층을 터널 장벽으로 사용하는 Magnetic Tunnel Junction(MTJ)시료의 특성에 가장 크게 작용하는 요인 중에 한 가지는 양질의 Al산화막 형성에 있다. Al산화막이 터널 장벽으로 제대로 된 역할을 하기 위해서는 Al층에 인접한 자성층에 영향을 미치지 않으면서 Al층을 균일하게 산화시킬 수 있는 조건이 만족되어야 하며, 이러한 $Al_2$O$_3$층의 제작에 가장 적합한 실험적 조건은 Al층의 산화에 Low power plasma를 사용하며, 산화 Chamber내부를 되도록 높은 분압의 산소 분위기로 유지시켜서 조금씩 장시간 동안 Al을 산화시키는 것이다. (중략)

• Journal of the Korean Society for Nondestructive Testing
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• v.10 no.1
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• pp.29-37
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• 1990

In this study the disbonding tests of adhesively bonded Al/Al honeycomb structures were performed by ultrasonic methods. Ultrasonic C-scan squiter method and ultrasonic surface wave attenuation measuring method were applied for the detection of skin/core disbonding. The bonding quality of Al/Al honeycomb structures could be well evaluated by properly controlled ultrasonic parameters.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.160-160
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• 2012

Al과 Al합금은 경량금속으로 가공성과 내식성이 우수하여 철강제품의 부식방지, 고효율 반사체 등의 산업 분야에 널리 이용된다. 본 연구에서는 Al과 Al-3wt%Si, Al-10wt%Si의 Al 합금을 마그네트론 스퍼터링으로 코팅하였고 외부 자기장 변화와 빗각 증착에 따른 반사율과 조직 변화 등의 물성을 비교 분석하였다.

• Journal of the Korean Applied Science and Technology
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• v.33 no.2
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• pp.401-410
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• 2016

The $Pt-Sn/Al_2O_3$ catalysts mixed with metal oxides for propane dehydrogenation were studied. $Cu-Mn/{\gamma}-Al_2O_3$, $Ni-Mn/{\gamma}-Al_2O_3$, $Cu/{\alpha}-Al_2O_3$ was prepared and mixed with $Pt-Sn/Al_2O_3$ to measure the activity for propane dehydrogenation. As standard sample, $Pt-Sn/Al_2O_3$ catalyst mixed with glassbead was adopted. In the case of catalytic activity test after non-reductive pretreatment of catalyst and metal oxide, $Pt-Sn/Al_2O_3$ mixed with $Cu-Mn/{\gamma}-Al_2O_3$ showed higher conversion of 15% and similar selectivity at $576.5^{\circ}C$, compared to conversion of 8% in standard sample. In the case of catalytic activity test after reductive pretreatment of catalyst and metal oxde, $Cu/{\alpha}-Al_2O_3$ showed higer yield than standard sample. But, increase of yield of most of samples after reductive pretreatment was not significant, so it was found that lattice oxygen of $Cu-Mn/{\gamma}-Al_2O_3$ is effective to propane dehydrogenation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.