• 한국세라믹학회지
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• 제29권12호
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• pp.926-934
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• 1992

Uniform diamond films in a few $\textrm{mm}^2$ size and locally isolated diamond single crystals in size of 60 $\mu\textrm{m}$ were synthesized on Si-wafer and Al2O3 substrate by the method of acetylene flame. The effects of substrate temperature and flow ratio of oxygen to acetylene on the morphology of deposited diamond were investigated. According to the observations of growth behavior of diamond on Si substrate with respect to substrate surface pretreatment and flow ratio, it was shown that well faceted diamonds could grow uniformly when flow ratio was above 0.9 and substrates were densely scratched. With increasing substrates temperature, the crystal morphology changes from octahedron bounded by only {111} plane below 850$^{\circ}C$ to cubo-octahedron with almost equal development of {111} and {100} plane in the temperature range of 850∼950$^{\circ}C$. Between 950∼1050$^{\circ}C$, the {111} faces become rough and concave. Above 1050$^{\circ}C$, new crystallites begin to grow on concave {111} surface and overall morphology looks like cubo-octahedron with degenerated {111} faces. These changes of morphology can be understood in terms of the different growth mode of each crystallographic plane with respect to the substrate temperature and supersaturation. And the observed phenomena on {111} planes can be related to the face instability and twin generation.

• 동력기계공학회지
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• 제10권2호
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• pp.111-116
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• 2006

Tribologcal property of the ceramics used in severe condition was investigated and both $Al_2O_3$ ball and Al/SiC composite made by thermal spray process[TSP] were used as a specimen in this study. Four kinds of material couple in ball and disk specimens were tested in the dry condition by using ball-on-disk type tribo-tester. Friction coefficient, surface roughness, wear rate, and photograph of the worn surface were investigated. Generally, High SiC contents[$40{\sim}50%$] specimens showed very low friction coefficient below 0.05 and little wear rate in dry condition. And also, low SiC contents[0%] specimens showed a moderate wear rate and high coefficient of friction at the same condition.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.65-66
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• 2007

비대칭 마그네트론을 이용하여 사원계 CrTiAlN 나노 복합 박막을 합성하였고 합성된 박막의 특성을 분석하였다. CrTiAlN 나노복합 박막의 미세구조는 CrN (111)과 CrN (200)방향으로 성장하였고 기계적 특성은 $30\;{\sim}\;39\;GPa$의 경도 값을 얻었다. 질소 분압이 0.33 Pa에서 가장 높은 경도 값을 얻을 수 있었다.

• 한국표면공학회지
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• 제46권3호
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• pp.111-115
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• 2013

To study the encapsulation method for large-area organic light emitting devices (OLEDs), OLED of ITO / 2-TNATA / NPB / $Alq_3$:Rubrene / $Alq_3$ / LiF / Al structure was fabricated, which on $Alq_3$/LiF/Al as protective layer of OLED was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and flat glass. The current density and luminance of encapsulated OLED using attaching film and flat glass has similar characteristics compared with non-encapsulated OLED when thickness of Al as a protective layer was 1200 nm, otherwise power efficiency of encapsulated OLED was better than non-encapsulated OLED. Encapsulation process using attaching film and flat glass did not have any effects on the emission spectrum and the Commission International de L'Eclairage (CIE) coordinate. The lifetime of encapsulated OLED using attaching film and flat glass was 287 hours in 1200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 54% compared with 186 hours in same Al thickness, lifetime of encapsulated OLED using epoxy and flat glass. As a result, it showed the improved efficiency and the long lifetime, because the encapsulation method using attaching film and flat glass could minimize the impact on OLED caused through UV hardening process in case of glass encapsulation using epoxy.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1022-1025
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• 2005

ZnO 나노 구조의 형성 시 기판 표면에 의한 영향을 알아보기 위하여, Si(111) 기판과 $Al_2O_3$C (0111)면, A (0112)면, R (2110)면의 기판을 사용하여 나노 구조를 형성시키고 광학적 특성의 변화를 관찰하였다. ZnO 나노 구조는 대기 중에서 수평형 성장로를 이용하였고, 무촉매법으로 Zn 소스만을 사용하여 성장시켰다. 기판의 온도는 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$로 설정하였고, 성장된 나노 구조는 He-Cd laser (325nm)를 이용하여 10 K에서 300K까지 온도를 변화시키면서 발광 특성의 변화를 분석하였다. 상온에서 측정한 Photoluminescence (PL) 결과로부터, Si과 $Al_2O_3$ 기판에서 각각 384nm, 391 nm의 UV 발광이 관찰되었다. Si 기판에서는 산소 결핍형 결함에 의한 것으로 판단되는 녹색 발광이 관찰되었지만 $Al_2O_3$ 기판에서는 녹색 발광이 관찰되지 않았다. 그리고 온도 변화에 따른 PL 측정 결과 Si과 $Al_2O_3$ 기판에서의 UV 발광 피크의 기원이 다름을 확인할 수 있었다. 이러한 발광 특성의 차이는 기판의 표면 에너지 차이가 나노 구조의 성장 매커니즘에 영향을 주어 발생한 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• 한국세라믹학회지
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• 제25권2호
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• pp.111-116
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• 1988

Aluminum hydrates were prepared by precipitation method using Al2(SO4)3$.$18H2O as a starting material and NH4OH as precipitation agent. The phases of aluminum hydrate were changed from amorphous aluminum hydrate to pseudo-boehmite of AlOOH form and bayerite, gibbsite, hydragillite and norstrandite of Al(OH)3 form with increasing pH. As pH increased, agglomeration phenomena were reduced. Aluminum hydrates of AlOOH and Al(OH)3 form represented dehydration of structural water near 175$^{\circ}C$ and 385$^{\circ}C$, and 280$^{\circ}C$, respectively. As the ratio of Al(OH)3 to AlOOH increased, specific surface area was reduced.

• 한국기계가공학회지
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• 제13권6호
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• pp.111-118
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• 2014

Aluminum lithium alloys are new materials developed for lightweight aircraft parts. However, as compared with conventional aluminum alloys in high-speed machining, problems such as tool wear, machining distortion, and cutting ability arise. This study presents the machining distortion characteristics of an Al-Li alloy wing tip in relation to the cutting heat in high-speed machining. A machining experiment was conducted with high-speed machining equipment for an evaluation of the machining distortion characteristics, with each machining stage temperature change of the workpiece machining surface, and the inside and outside temperature changes of the equipment measured. By measuring the amount of distortion of the workpiece before and after machining, the cutting heat was analyzed with regard to its effect on machining distortion in the product.

• Journal of Welding and Joining
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• 제35권2호
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• pp.58-62
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• 2017

A319 aluminum alloy containing 6.5% Si and 3.5% Cu as major alloying elements has been widely used in machinery parts because of its excellent castability and crack resistance. However it needs more wear resistance to extend its usage to the severe wear environments. It has been known that hyper-eutectic Al-Si alloy having more than 12.6% Si contains pro-eutectic Si particles, which give better wear resistance and lubrication characteristics than hypo-eutectic Al-Si alloy like A319 alloy. In this study, it was tried to clad hyper-eutectic Al-Si alloy on the surface of A319 alloy. In the experiments, Al-36%Si alloy powder was mixed with organic binder to make a fluidic paste. The paste was screen-printed on the A319 alloy surface, melted by pulsed Nd:YAG laser and alloyed with the A319 base alloy. As experimental parameters, the average laser power was changed to 111 W, 202 W and 280 W. With increasing the average laser power, the melting depth was changed to $142{\mu}m$, $205{\mu}m$ and $245{\mu}m$, and the dilution rate to 67.2 %, 72.4 % and 75.7 %, and the Si content in the cladding layer to 16.2 %, 14.6 % and 13.7 %, respectively. The cross-section of the cladding layer showed very fine eutectic microstructure even though it was hyper-eutectic Al-Si alloy. This seems to be due to the rapid solidification of the melted spot by single laser pulse. The average hardness for the three cladding layers was HV175, which was much higher than HV96 of A319 base alloy. From the block-on-roll wear tests, A319 alloy had a wear loss of 5.8 mg, but the three cladding layers had an average wear loss of 3.5 mg, which meant that an increase of 40 % in wear resistance was obtained by laser cladding.

• 센서학회지
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• 제9권5호
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• pp.389-395
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• 2000

본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.