• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• 열처리공학회지
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• 제11권3호
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• pp.186-191
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• 1998

An oxidation behavior of 304 and 316 stainless steels were studied in dry air. After solution treatment, specimens were polished up to $1{\mu}m$ $A1_2O_3$ grade and then subjected to oxidation treatment in dry air at $800^{\circ}C{\sim}1200^{\circ}C$. The oxidation behavior between matrix and oxide scale was analyzed with SEM, EDS and XRD. When oxidation treatment was conducted at $1200^{\circ}C$, large thickness of Fe oxide scale was formed on top of surface and fine $(Cr,Fe)_2O_3$ oxide film was formed below it. Cr rich zone existed at interface between metal and $(Cr,Fe)_2O_3$ oxide layer, and it was believed that this zone acted as obstacle to oxidation. Most of Ni was detected at the interface between metal and $(Cr,Fe)_2O_3$ and also detected at the interface between $Fe_2O_3$ and $(Cr,Fe)_2O_3$.

• 한국재료학회지
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• 제19권6호
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• pp.325-329
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• 2009

Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

• 열처리공학회지
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• 제12권1호
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• pp.31-39
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• 1999

In the present study, oxidation behavior of 304 and 316 stainless steels was investigated. After solution treatment, specimens were polished up to $1{\mu}m$ $Al_2O_3$ grade and then subjected to oxidation treatment in dry air. The range of temperature was used for oxidation treatment at $300^{\circ}C{\sim}500^{\circ}C$ and TEM was used for analyzing the components and structure of oxide film. Also, these results were compared with the results of ESCA and TG. According to the results of TEM analysis, it was found that Cr oxide film was formed on top of the surface after room temperature oxidation but amorphous Fe oxide was formed on top of the surface and polycrystalline $(Cr,Fe)_2O_3$ was formed below the amorphous Fe oxide layer after $500^{\circ}C$ oxidation treatment. The oxidized specimens at $500^{\circ}C$ showed that 316 stainless steel resists more strongly to grain and grain boundary oxidation than 304 stainless steel. These results suggested that Mo component resolved in 316 stainless steel matrix suppressed the formation of Cr carbide which may results in local Cr deplete area.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.131-132
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• 2015

$Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

• 한국산업융합학회 논문집
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• 제27권3호
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• pp.685-692
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• 2024

Currently used heating elements are metal and non-metal heating elements, including various types of heaters, and resistance line heating elements have a problem of decreasing thermal efficiency over time, so to solve this problem, a planar heating element using high-purity carbon materials and oxidation-resistant inorganic compounds was applied. Through the manufacture of planar heating elements using CNT, ruthenium composite materials, and ruthenium oxide, physicochemical performance and capacity were increased, and instantaneous responsiveness was increased. Through thick film technology applicable to various base bodies, fine patterns were formed by the screening method in consideration of the fact that the performance of the heat source depends on the viscosity and pattern shape. The heating element was manufactured by thick film printing technology by mixing ruthenium oxide, CNT, Ag, etc. The characteristics of each paste were analyzed through viscosity measurement, and STS 430 was used as a base. Surface temperature and efficiency were measured by testing heaters manufactured for small wind tunnels and real-vehicle experiments. The surface temperature decreased as the air volume increased, and the optimal system boundary was found to be about 200 mm. Among the currently used heating elements, this paper manufactured a planar heating element using thick film technology to find out the relationship between air volume and temperature, and to study the surface temperature.

• Corrosion Science and Technology
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• 제17권4호
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• pp.166-175
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• 2018

In this study, the electrochemical properties of CP-Ti (commercially pure titanium) and Ti-64 (Ti-6Al-4V) were evaluated and the effect of hydrofluoric acid on corrosion resistance and electrochemical properties was elucidated. Additive manufactured materials were made by DMT (Directed Metal Tooling) method. Samples were heat-treated for 1 hour at $760^{\circ}C$ and then air cooled. Surface morphologies were studied by optical microscope and SEM. Electrochemical properties were evaluated by anodic polarization method and AC-impedance measurement. The oxide film formed on the surface was analyzed using an XPS. The addition of HF led to an increase in the passive current density and critical current density and decreased the polarization resistance regardless of the alloys employed. Based on the composition of the oxide film, the compositional difference observed by the addition of HF was little, regardless of the nature of alloys. The Warburg impedance obtained by AC-impedance measurement indicates the dissolution of the constituents of CP-Ti and Ti-64 through a porous oxide film.

• 한국세라믹학회지
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• 제34권5호
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• 한국재료학회지
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• 제23권9호
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• 한국재료학회지
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• 제27권5호
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.