• Proceedings of the KWS Conference
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• 2006.10a
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• pp.169-171
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• 2006

Solderability and reaction properties were investigated for four Pb-free alloys as a function of Ag contents; Sn-4.0Ag-0.5Cu, Sn-3.0Ag-0.5Cu, Sn-2.5Ag-0.5Cu, and Sn-1.0Ag-0.5Cu. The alloy of the lowest Ag content, i.e., Sn-1.0Ag-0.5Cu, showed poor wetting properties as the reaction temperature decreased to 230oC. Variation of Ag concentration in the Sn-xAg-0.5Cu alloy shifted exothermic peaks indicating the undercooling temperature in DSC curve. For the aging process at 170oC, the thickness of IMCs at the board-side solder/Cu interface increased with the Ag concentration.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.32-39
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• 1995

SnO2/AI/Ag/AI/SnO2층 구조로 이루어진 열처리 가능한 열선반사막을 직류 스퍼터링법에 의해 soda-lime silicate 유리위에 형성시켰다. 이 코팅유리를 $650^{\circ}C$에서 열처리하면 가시광선 투과율 85%이상, plasma wavelength 970nm 이하를 얻을 수 있었다. 따라서 이 구조의 막은 유리 곡가공에 견디는 열적 안정성을 나타내었으며, 코팅유리의 열처리에 따른 전기적 특성 및 열적 안정성은 각각 Ag와 AI층의 두께에 의존하였다.

• Journal of the Korean Chemical Society
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• v.65 no.5
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• pp.401-405
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• 2021

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.81-85
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• 2017

$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

• Journal of Powder Materials
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• v.18 no.4
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• pp.372-377
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• 2011

In this study, we reported the microstructure and properties of Ag-$SnO_2$ contact materials fabricated by a controlled milling process with subsequent consolidation. The milled powders were consolidated to bulk samples using a magnetic pulsed compaction process. The nano-scale $SnO_2$ phases were distributed homogeneously in the Ag matrix after the consolidation. The relative density and hardness of the Ag-$SnO_2$ contact materials were 95~96% and 89~131 Hv, respectively.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.119-123
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• 2021

SnO₂ single layer and SnO₂/Ag/SnO₂ (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO₂ films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×10⁴ Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO₂ films enhances the opto-electrical performance without substrate heating or annealing process.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.145-149
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• 2019

Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.603-608
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• 2001

$MO-SiO_2$ (M = Zn, Sn, In, Ag, Ni) binary silica gels were synthesized by sol-gel method and their structural change with the kind of metal ions was characterized by XRD, FT- IR and $^{29}$Si-NMR. Although X-ray analysis showed partial recrystallization of $AgNO_3$ in $Ag-SiO_2$gel, crystalline phase formed by the bonding between metal ion and the silica matrix didn't appear in all $MO-SiO_2$ gels. The FT-IR analysis showed that Zn, Sn and in partially formed Si-O-M bonding in silica matrix and made an shift of absorption peak to by Si-O-Si symmetrical vibration. In addition, $^{29}Si-NMR$ studies showed that Zn, Sn and In didn't affect sol-gel process of silica and were linked with non-bridging oxygen of the linear silica structure, which formed imperfect network because of low temperature sol-gel process. Ag and Ni make a role of catalysis on sol-gel process, resulting in densifying the silica network structure.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.231-233
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• 1987

A study has been made on the electrical properties of sintered Ag-$SnO_2$ composite materials. Hardness increased with $SnO_2$ contents increasing while the electrical conductivity decreased. The weight loss after are erosion test was decreased with $SnO_2$ contents increasing to 10 (w/o) $SnO_2$.